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| (R) Z01xxxA SENSITIVE GATE TRIACS FEATURES IT(RMS) = 0.8A VDRM = 400V to 800V IGT 3mA to 25mA A1 G A2 DESCRIPTION The Z01xxxA series of triacs uses a high performance TOP GLASS PNPN technology. These parts are intended for general purpose applications where gate high sensitivity is required. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM Parameter RMS on-state current (360 conduction angle) Non repetitive surge peak on-state current (Tj initial = 25C ) I2t Value for fusing Critical rate of rise of on-state current diG /dt = 0.1 A/s. IG = 50 mA Tl= 70 C tp = 8.3 ms tp = 10 ms tp = 10 ms Repetitive F = 50 Hz Non Repetitive Tstg Tj Tl Storage and operating junction temperature range Maximum lead temperature for soldering during 10s at 2mm from case Value 0.8 8.5 8 0.32 10 50 - 40, + 150 - 40, + 125 260 C C A2s A/s Unit A A TO92 (Plastic) I2 t dI/dt Symbol VDRM VRRM January 1995 Parameter D Repetitive peak off-state voltage Tj = 125C 400 Voltage M 600 S 700 N 800 Unit V 1/5 Z01xxxA THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-l) Rth(j-l) Junction to ambient Junction to leads for D.C Junction to leads for A.C 360 conduction angle (F=50Hz) Parameter Value 150 80 60 Unit C/W C/W C/W GATE CHARACTERISTICS (maximum values) PG (AV)= 0.1 W PGM = 2 W (tp = 20 s) ELECTRICAL CHARACTERISTICS Symbol IGT Test Conditions VD=12V (DC) RL=140 Tj= 25C Quadrant 03 I-II-III IV VGT VGD tgt VD=12V (DC) RL=140 VD=VDRM RL=3.3k VD=VDRM IG = 40mA IT = 1.1A dIG/dt = 0.5A/s IT= 50 mA Gate open IG= 1.2 IGT Tj= 25C Tj= 125C Tj= 25C I-II-III-IV I-II-III-IV I-II-III-IV MAX MAX MAX MIN TYP 3 5 Sensitivity 07 5 7 1.5 0.2 2 09 10 10 10 25 25 V V s mA Unit IGM = 1 A (tp = 20 s) IH * IL Tj= 25C Tj= 25C I-III-IV II MAX TYP TYP MAX MAX MAX MIN TYP 7 7 14 10 10 20 1.5 10 10 10 20 25 25 50 mA mA VTM * IDRM IRRM dV/dt * ITM= 1.1A tp= 380s VD = VDRM VR = VRRM VD=67%VDRM Gate open (dI/dt)c = 0.35 A/ms Tj= 25C Tj= 25C Tj= 110C Tj= 110C V A 200 10 20 20 50 50 100 V/s 150 400 2 5 V/s (dV/dt)c * Tj= 110C MIN TYP 1 1 * For either polarity of electrode A2 voltage with reference to electrode A1 ORDERING INFORMATION Z TRIAC TOP GLASS CURRENT 2/5 01 07 SENSITIVITY M A PACKAGE : A = TO92 VOLTAGE (R) Z01xxxA Fig.1 : Maximum RMS power dissipation versus RMS on-state current. Fig.2 : Correlation between maximum RMS power dissipation and maximum allowable temperature (Tamb and Tlead). P(W) 1 180 O P (W) Tlead (o C) 1 -65 Rth(j-l) Rth(j-a) = 180 0.8 0.6 0.4 o = 120 o 0.8 0.6 -75 -85 -95 = 90 = 60 = 30 o o o 0.4 -105 0.2 Tamb (oC) 0.2 0 0 I 0.1 0.2 0.3 0.4 0.5 T(RMS) 0.6 (A) 0.8 -115 60 80 100 120 -125 140 0.7 0 0 20 40 Fig.3 : RMS on-state current versus case temperature. Fig.4 : Relative variation of thermal impedance junction to ambient versus pulse duration. I T(RMS) (A) Zth(j-a)/Rth(j-a) 1.00 1 0.8 0.6 = 180 o 0.10 0.4 0.2 Tlead( o C) 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0.01 1E-3 1E-2 1E-1 1 E+0 1 E+1 tp (s) 1E +2 5 E+2 Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature. Igt[Tj] o Igt[Tj=25 C] Ih[Tj] o Ih[Tj=25 C] Fig.6 : Non repetitive surge peak on-state current versus number of cycles. ITSM(A) 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 Igt 7 Tj initial = 25 C o 6 5 4 3 2 1 Tj(oC) Number of cycles Ih -40 -20 0 20 40 60 80 100 120 140 0 1 10 100 1000 3/5 (R) Z01xxxA Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp 10ms, and corresponding value of I2t. I TSM (A). I2 t (A2 s) Fig.8 : On-state characteristics (maximum values). I TM (A) 100 Tj initial = 25oC 10 Tj initial o 25 C 10 I TSM 1 1 Tj max Tj max Vto =0.95V Rt =0.42 0 I2 t tp(ms) VTM (V) 0.1 1 10 0.1 0 0.5 1 1.5 2 2.5 3 3.5 4 4/5 (R) Z01xxxA PACKAGE MECHANICAL DATA TO92 (Plastic) DIMENSIONS Millimeters Inches Typ. Min. Max. Typ. Min. Max. 1.35 0.053 4.7 2.54 4.4 12.7 3.7 0.45 4.8 0.100 0.173 0.189 0.500 0.146 0.017 0.185 REF. A a B C A B C D F D E E F a Marking : type number Weight : 0.2 g Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THO MSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c) 1995 SGS-THOMSON Microelectronics - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5 (R) |
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