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| (R) T2514xKS T2516xKS SNUBBERLESS TRIACS FEATURES IT(RMS) = 25A HIGH COMMUTATION : (dl/dt)c 12A/ms T2514xKS 22A/ms T2516xKS INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) DESCRIPTION The T2514/T2516xKS series of isolated triacs uses a high performances MESA GLASS technology. The SNUBBERLESSTM concept offer suppression of RC nerwork and it is suitable for application such as phase control and static switching on inductive or resistive load. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM Parameter RMS on-state current (360conduction angle) Non repetitive surge peak on-state current (Tj initial = 25C) I2t vakue for fusing Critical rate of rise of on-state current IG = 500mA dlG/dt = 1A/s Tc = 85C tp = 8.3ms tp = 10ms I2 t dl/dt tp = 10ms Repetitive F = 50Hz Non repetitive Tstg Tj Tl Storage and operating junction temperature range Maximum lead temperature for soldering during 10s Value 25 260 250 312 20 100 - 40 + 150 - 40 + 125 260 C C A2s A/s Unit A A A1 A2 G RD107 (Plastic) Symbol VDRM VRRM April 1995 Parameter D Repetitive peak off-state voltage Tj = 125C 400 Voltage M 600 S 700 N 800 Unit V 1/5 T2514xKS / T2516xKS THERMAL RESISTANCES Symbol Rth(j-c) Rth(j-c) Parameter Junction to case for D.C Junction to case for A.C 360 conduction angle (F=50Hz) Value 1.7 1.3 Unit C/W C/W GATE CHARACTERISTICS (maximum values) PG (AV)= 1 W PGM = 10 W (tp = 20 s) IGM = 4 A (tp = 20 s) ELECTRICAL CHARACTERISTICS Symbol IGT Test Conditions VD=12V (DC) RL=33 Tj= 25C Quadrant I-II-III MIN MAX VGT VGD tgt IH * IL VD=12V (DC) RL=33 VD=VDRM RL=3.3k VD=VDRM IT = 35A IG = 500mA dlG/dt= 3As IT= 250mA IG = 1.2 IGT Gate open Tj= 25C Tj= 125C Tj= 25C Tj= 25C Tj = 25C I-III II VTM * IDRM IRRM dV/dt * (dI/dt)c * ITM= 35A tp= 380s VD = VDRM VR= VRRM VD=67%VDRM Without snubber Gate open Tj= 25C Tj= 25C Tj= 125C Tj= 125C Tj= 125C I-II-III I-II-III I-II-III MAX MIN TYP MAX TYP TYP MAX MAX MAX MIN MIN TYP * For either polarity of electrode A2 voltage with reference to electode A1 Sensitivity 14 2 35 1.5 0.2 2 35 35 70 1.5 10 3 500 12 24 750 22 44 50 50 100 50 16 Unit mA V V s mA mA V A mA V/s A/ms ORDERING INFORMATION T TRIAC MESA GLASS CURRENT 2/5 25 16 SENSITIVITY M KS PACKAGES : KS = RD107 Insulated VOLTAGE (R) T2514xKS / T2516xKS Fig.1 : Maximum RMS power dissipation versus average on-state current. Fig.2 : Correlation between maximum RMS power dissipation and maximum allowable temperature (Tamb and Tcase) for different thermal resistances heatsink + contact). P (W) 180 O P(W) Tcase (o C) Rth = 0 o C/W 0.75 o C/W 1.5 o C/W 2.5 o C/W 35 30 25 20 15 10 5 0 0 2 4 35 = 180 = 120 = 90 = 60 = 30 o o o o o 30 25 20 15 10 -85 -95 -105 -115 I T(RMS) (A) 6 8 10 12 14 16 18 20 22 24 26 5 0 0 20 Tamb ( C) o 40 60 80 100 120 -125 140 Fig.3 : RMS on-state current versus case temperature. I T(RMS) (A) Fig.4 : Relative variation of thermal impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) 1 30 25 20 15 0.1 = 180 o 10 5 Tcase ( C) 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0.01 1E-3 1E-2 1E-1 1E +0 o tp( s) 1 E +1 Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature. Igt[Tj] o Igt[Tj=25 C] Ih[Tj] o Ih[Tj=25 C] Fig.6 : Non repetitive surge peak on-state current versus number of cycles. I TSM(A) 250 Tj initial = 25 C o 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 Igt 200 150 100 50 Number of cycles Ih -40 -20 0 20 40 60 80 100 120 140 0 1 10 100 1000 3/5 (R) T2514xKS / T2516xKS Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp 10ms, and corresponding value of I2t. I TSM (A). I2 t (A2 s) Fig.8 : On-state characteristics (maximum values). 1000 I2t 1000 I TM (A) Tj initial o 25 C I TSM Tj initial = 25oC 100 Tj max 100 10 Tj max Vto =0.92 V Rt =0.0145 1 tp(ms) VTM (V) 10 1 10 0.1 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 4/5 (R) T2514xKS / T2516xKS PACKAGE MECHANICAL DATA RD107 (Plastic) G a2 H DIMENSIONS REF. L A a1 a2 B b1 C c1 c2 E Millimeters Inches Typ. Min. Max. Typ. Min. Max. 40.0 29.9 30.3 22.0 27.0 24.0 14.0 3.5 1.95 3.0 0.75 0.85 4.0 4.5 0.45 0.55 6.2 6.3 4.7 9.5 11.35 1.4 1.6 4.8 11.7 0.446 0.551 0.630 1.575 1.177 1.193 0.867 1.063 0.945 0.552 0.138 0.767 0.118 0.029 0.033 0.157 0.177 0.018 0.022 0.244 0.248 0.185 0.189 0.374 0.461 b1 C c2 a1 c1 F J I E K A Marking : type number Weight : 20g F B G H I J K L Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c) 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5 (R) |
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