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2N5657
SILICON NPN TRANSISTOR
s s
SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR
DESCRIPTION The 2N5657 is a silicon epitaxial-base NPN transistor in Jedec SOT-32 plastic package. It is intended for use output amplifiers, low current, high voltage converters and AC line relays.
3 2 1
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC I CM IB P t ot T stg Tj June 1997 Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T c 25 C St orage Temperature Max. Operating Junction Temperature
o
Value 375 350 6 0.5 1 0.25 20 -65 to 150 150
Uni t V V V A A A W
o o
C C 1/5
2N5657
THERMAL DATA
R t hj-ca se Thermal Resistance Junction-case Max 6.25
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol I CBO I CEV I CEO I EBO Parameter Collector Cut-off Current (IE = 0) Collector Cut-off Current (V BE = -1.5V) Collector Cut-off Current (IB = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = 375 V V CE = 350 V V CE = 250 V V CE = 250 V V EB = 6 V I C = 1 mA I C = 100 mA I C = 0.1 A I C = 0.25 A I C = 0.5 A I C = 0.1 A IC IC IC IC = = = = 50 mA 0.1 A 0.25 A 0.5 A L = 50 mH I B = 10 mA IB = 25 mA I B = 0.1 A VCE = 10 V V CE V CE VCE V CE = 10 = 10 = 10 = 10 V V V V f = 1KHz f =10MHz 25 30 15 5 20 10 25 MHz pF 350 350 1 2.5 10 1 250 Min. Typ . Max. 0.01 0.1 1 0.1 0.01 Un it mA mA mA mA mA V V V V V V
Tc = 100 o C
V ( BR)CEO Collector-Emitter Breakdown Voltage V CEO(sus ) Collector-Emitter Sustaining Voltage V CE(sat ) Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current G ain
V BE hFE
hf e fT C CBO
Small Signal Current Gain Transition frequency Collector Base Capacitance
I C = 0.1 A I C = 50 mA V CB = 10 V
VCE = 10 V V CE = 10 V
f = 100KHz
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
Safe Operating Area
Derating Curve
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2N5657
DC Current Gain (NPN type) DC Current Gain (PNP type)
Collector Emitter Saturation Voltage (NPN type)
Collector Emitter Saturation Voltage (PNP type)
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2N5657
SOT-32 (TO-126) MECHANICAL DATA
mm MIN. A B b b1 C c1 D e e3 F G H H2 2.15 3 4.15 3.8 3.2 2.54 0.084 0.118 7.4 10.5 0.7 0.49 2.4 1.0 15.4 2.2 4.65 0.163 0.150 0.126 0.100 TYP. MAX. 7.8 10.8 0.9 0.75 2.7 1.3 16.0 MIN. 0.291 0.413 0.028 0.019 0.040 0.039 0.606 0.087 0.183 inch TYP. MAX. 0.307 0.445 0.035 0.030 0.106 0.050 0.629
DIM.
H2
0016114
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2N5657
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada- China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . ..
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