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| 2N5680 SILICON PNP TRANSISTOR s s SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR APPLICATIONS GENERAL PURPOSE SWITCHING s GENERAL PURPOSE AMPLIFIERS s DESCRIPTION The 2N5680 is high voltage silicon epitaxial planar PNP transistors in Jedec TO-39 metal case intended for use as drivers for high power transistors in general purpose, amplifier and switching circuit. The 2N5680 complementary NPN type is the 2N5682. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC IB P tot P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Base Current Total Dissipation at T c 25 C o Value -120 -120 -4 -1 -0.5 10 1 -65 to 200 200 o Unit V V V A A W W o o Total Dissipation at T amb 50 C Storage Temperature Max. Operating Junction Temperature C C June 1997 1/4 2N5680 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 17.5 175 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEV Parameter Collector Cut-off Current (V BE = -1.5V) Test Conditions for 2N5679 for 2N5680 T c = 150 o C for 2N5679 for 2N5680 for 2N5679 for 2N5680 for 2N5679 for 2N5680 V EB = -4 V I C = -10 mA for 2N5679 for 2N5680 I C = -250 mA I C = -500 mA I C = -1 A I C = -250 mA I C = -250 mA I C = -1 A I C = -0.2 A I B = -25 mA I B = -50 mA I B = -200 mA V CE = -2 V V CE = -2 V V CE = -2 V V CE = -1.5 V f = 1KHz 40 5 40 30 50 MHz pF V CE = -100 V V CE = -120 V V CE = -100 V V CE = -120 V V CB = -100 V V CB = -120 V V CB = -70 V V CB = -80 V Min. Typ. Max. -1 -1 -1 -1 -1 -1 -10 -10 -1 Unit A A A A A A A A A I CBO I CEO I EBO Collector Cut-off Current (I E = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) V CEO(sus) Collector-Emitter Sustaining Voltage V CE(sat) Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain Small Signal Current Gain Transition frequency Collector Base Capacitance -100 -120 -0.6 -1 -2 -1 150 V V V V V V V BE h FE hfe fT C CBO I C = -100 mA V CE = -10 V f =10MHz IE = 0 V CB = -20 V f = 1MHz Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 2/4 2N5680 TO-39 MECHANICAL DATA mm DIM. MIN. A B D E F G H I L 5.08 1.2 0.9 45o (typ.) 12.7 0.49 6.6 8.5 9.4 0.200 0.047 0.035 TYP. MAX. MIN. 0.500 0.019 0.260 0.334 0.370 TYP. MAX. inch G I H D A L F E B P008B 3/4 2N5680 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4 |
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