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| BUW90 HIGH POWER NPN SILICON TRANSISTOR s s s s s SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED VERY LOW SATURATION VOLTAGE AND HIGH GAIN APPLICATION s SWITCHING REGULATORS s MOTOR CONTROL s HIGH FREQUENCY AND EFFICENCY CONVERTERS DESCRIPTION The BUW90 is a Multiepitaxial planar NPN transistor in TO-218 plastic package. It's intented for use in high frequency and efficiency converters such us motor controllers and industrial equipment. 3 2 1 TO-218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CEV V CEO V EBO IC I CM IB I BM P Base P t ot T stg Tj Parameter Collector-emitter Voltage (V BE = -1.5V) Collector-emitter Voltage (I B = 0) Emitt er-Base Voltage (IC = 0) Collector Current Collector Peak Current Base Current Base Peak Current Reverse Bias Base Power Dissipation (B.E. junction in avalanche) o Total Power Dissipation at T case < 25 C Storage T emperature Max Operating Junction T emperature Value 250 125 7 20 30 4 6 1 125 -65 to 175 175 Unit V V V A A A A W W o o C C July 1997 1/5 BUW90 THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max 1.2 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CER I CEV I EBO Parameter Collector Cut-off Current (R BE = 10) Collector Cut-off Current Emitter Cut-off Current (IC = 0) Test Cond ition s V CE = V CEV V CE = V CEV V CE = V CEV V CE = V CEV V EB = 5 V I C = 0.2A L = 25 mH I E = 50 mA IC IC IC IC = = = = 5.5 A 11 A 5.5 11 A IB IB IB IB = = = = 0.35 A 1.1 A 0.35 A 1.1 A 125 7 0.5 0.65 0.5 0.8 1.3 1.35 35 30 45 40 2 2.6 1.1 1.6 2.5 4 2 2.5 0.8 0.9 0.9 1.2 1.6 1.7 T c = 100 C V BE = -1.5V o V BE = - 1.5V TC =100 C o Min. Typ . Max. 1 5 1 5 1 Un it mA mA mA mA mA V V V V V V V V A/s A/s V V V V V CEO(sus ) Collector-Emitter Sustaining Voltage V EBO V CE(sat ) Emitter-base Voltage (Ic = 0) Collector-Emitter Saturation Voltage Tj = 100 oC o Tj = 100 C Tj = 100 C IB1 = 1.65 A T j = 25o C o T j = 100 C o V BE(s at) dic /dt Base-Emitter Saturation Voltage Rated of Rise of on-st ate Collect or Current Collector Emitter Dynamic Voltage Collector Emitter Dynamic Voltage I C = 11 A I C = 11 A V CC = 100 V I B = 1.1 A I B = 1.1 A RC = 0 V CE(2 s) V CC = 100 V R C = 9 IB1 = 1.1 A T j = 25o C o T j = 100 C RC = 9 B1 = 1.1 A o T j = 25 C o T j = 100 C V CE(4 s) V CC = 100 V Pulsed: Pulse duration = 300 s, duty cycle < 2 % RESISTIVE LOAD Symb ol tr ts tf Parameter Rise Time Storage Time Fall T ime Test Cond ition s V CC = 100 V V BB = -5 V R B2 = 1.3 I C = 15 A IB1 = 1.8 A tp = 30s Min. Typ . 0.4 0.6 0.14 Max. 1 1 0.3 Un it s s s 2/5 BUW90 ELECTRICAL CHARACTERISTICS (continued) INDUCTIVE LOAD Symb ol ts tf tt tc ts tf tt tc ts tf tt ts tf tt Pulsed test Parameter Storage Time Fall T ime Tail T ime in Turn-on Crossover T ime Storage Time Fall T ime Tail T ime in Turn-on Crossover T ime Storage Time Fall T ime Tail T ime in Turn-on Storage Time Fall T ime Tail T ime in Turn-on tp < 300 s Test Cond ition s V CC = 100 V V BB = -5 V R B = 2.3 VCC = 100 V A V BB = -5 V R B = 2.3 o T j =100 C IC = 11 A I B = 1.1 A V clamp = 125 V L C = 0.25 mH I C = 11 A I B = 1.1 Min. Typ . 0.75 0.08 0.02 0.15 0.95 0.14 0.04 0.3 1.8 0.7 0.2 2.5 1 0.4 Max. 1.4 0.2 0.05 0.3 1.7 0.3 0.1 0.5 Un it s s s s s s s s s s s s s s V clamp = 125 V L C = 0.25 mH V CC = 100 V I C = 11 A I B = 1.1 A V cl amp = 125 V V BB = 0 L C = 0.25 mH R B = 4.7 V CC = 100 V V BB = 0 R B = 4.7 o T j =100 C IC = 11 A I B = 1.1 A V c la mp = 125 V L C = 0.25 mH duty cycle < 2 % Figure 1 : Switching Times Test Circuit (resistive load). 1 Fast electronic switc h 2 Non-inductive Resistor 3/5 BUW90 TO-218 (SOT-93) MECHANICAL DATA mm MIN. A C D E F G H L2 L3 L5 L6 R O - 4 3.95 31 12.2 4.1 - 0.157 0.5 1.1 10.8 14.7 - 18 4.15 0.155 1.220 0.480 0.161 4.7 1.17 2.5 0.78 1.3 11.1 15.2 16.2 0.019 0.043 0.425 0.578 - 0.708 0.163 TYP. MAX. 4.9 1.37 MIN. 0.185 0.046 0.098 0.030 0.051 0.437 0.598 0.637 inch TYP. MAX. 0.193 0.054 DIM. A C L5 L3 L2 L6 D E H F R 1 2 3 P025A 4/5 G BUW90 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada- China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 5/5 |
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