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| (R) TS820-B/T SENSITIVE SCR FEATURES A IT(RMS) =8A VDRM/VRRM = 400, 600V, 700V IGT < 200A SMD PACKAGE DESCRIPTION The TS820-B/T series of SCR use a high performance TOPGLASS PNPN technology. The parts are intended for general purpose applications using surface mount or through hole technology. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) IT(AV) ITSM I2 t dI/dt Tstg Tj Tl Parameter RMS on-state current (180 conductionangle) Average on-state current (180 conductionangle) Non repetitive surge peak on-state current (Tj initial = 25C ) I2t Value for fusing Critical rate of rise of on-state current dIG /dt = 0.1 A/s. IG = 10 mA Storage junction temperature range Operating junction temperature range A A K G K A G DPAK (Plastic) TS820-B TO-220AB (Plastic) TS820-T Value Tc= 110C Tc= 110C tp = 8.3ms tp = 10ms tp = 10ms 8 5 73 70 24 100 - 40 to + 150 - 40 to + 125 260 Unit A A A A2s A/s C C Maximum temperature for soldering during 10s Symbol Parameter 400B/T TS820600B/T 600 700B/T 700 Unit VDRM VRRM Repetitive peak off-state voltage Tj = 125C RGK = 220 400 V November 1998 - Ed: 6A 1/6 TS820-B/T THERMAL RESISTANCES Symbol Rth(j-a) Parameter Junction to ambient (S=0.5cm ) 2 Value DPAK TO-220AB 70 60 2.0 Unit C/W Rth(j-c) Junction to case for DC DPAK / TO-220AB C/W GATE CHARACTERISTICS (maximum values) PG (AV)= 0.2 W PGM = 3 W (tp = 20 s) ELECTRICAL CHARACTERISTICS Symbol IGT VGT VGD VRG IH VTM IDRM IRRM dV/dt Test Conditions VD=12V (DC) RL=140 VD=12V (DC) RL=140 VD=VDRM RL=3.3k RGK = 220 IRG = 10A IT= 50mA RGK = 1 K Tj= 25C Tj= 25C Tj= 125C Tj= 25C Tj= 25C Tj= 25C Tj= 25C Tj= 125C Tj= 125C Type MAX MAX MIN MIN MAX MAX MAX MAX MIN Value 200 0.8 0.1 8 5 1.6 5 1 5 Unit A V V V mA V A mA V/s IGM = 1.2 A (tp = 20 s) ITM= 16A tp= 380s VD= VDRM VR= VRRM RGK = 220 RGK = 220 VD=67%VDRM RGK = 220 ORDERING INFORMATION Add "-TR" suffix for Tape & Reel shipment TS SENSITIVE SCR CURRENT 8 20 - 600 B/T PACKAGE: B: DPAK T: TO-220 SENSITIVITY VOLTAGE 2/6 TS820-B/T Fig. 1: Maximum average power dissipation versus average on-state current. Fig. 2: Correlation between maximum average powerdissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact. P(W) 10 = 180 = 90 = 120 D.C. P(W) 10 8 6 = 30 = 60 Tcase (C) = 180 Rth=15C/W Rth=10C/W Rth=5C/W Rth=0C/W 8 6 110 115 4 360 4 2 Rth=37C/W 120 2 IT(av)(A) 0 0 1 2 3 4 5 Tamb(C) 0 6 7 0 25 50 75 100 125 125 Fig. 3-1: Average and D.C. on-statecurrent versus case temperature (TO-220AB). Fig. 3-2: Averageand D.C. on-state current versus ambient temperature (device mountedon FR4 with recommended pad layout) (DPAK) . IT(av)(A) 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 IT(av)(A) 10 8 6 4 2 Tcase(C) 0 0 25 50 75 100 125 DC DC =180 =180 Tamb(C) 0 25 50 75 100 125 Fig. 4-1: Relative variation of thermal impedance junction to case versus pulse duration. Fig. 4-5: Relative variation of thermal impedance junction to ambient versus pulse duration (recommended pad layout, FR4 PC board) (DPAK). K=[Zth(j-c)/Rth(j-c)] 1.0 K=[Zth(j-a)/Rth(j-a)] 1.00 0.5 0.10 0.2 tp(s) 0.1 1E-3 1E-2 1E-1 1E+0 tp(s) 0.01 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 3/6 TS820-B/T Fig. 5: Relative variation of gate trigger current and holding current versus junction temperature. Fig. 6: Non repetitive surge peak on-state current versus number of cycles. IGT,IH [Tj] / IGT [Tj=25C] ,IH 2.0 1.8 IGT 1.6 1.4 1.2 IH 1.0 0.8 0.6 0.4 0.2 0.0 -40 -20 0 80 70 60 50 40 30 20 10 ITSM(A) Tj initial=25 C F=50Hz Tj(C) 20 40 60 80 100 120 140 Number of cycles 1 10 100 1000 0 Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponding value of I2t. Fig. 8: On-statecharacteristics (maximum values). ITSM(A),I t(A s) 300 Tj initial=25C ITSM ITM(A) 100.0 100 50 10.0 Tj=Tj max. Tj=25C It 1.0 20 tp(ms) 10 1 2 5 10 Tj max.: Vto=0.85V Rd=46m VTM(V) 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Fig. 9: Thermal resistance junction to ambient versus copper surface under tab (Epoxyprinted circuit board FR4, copper thickness: 35m) (DPAK). Fig. 10: Typical reflow soldering heat profile, either for mounting on FR4 or metal-backed boards. T (C) Rth(j-a) (C/W) 100 80 60 40 20 S(cm ) 0 0 2 4 6 8 10 12 14 16 18 20 250 200 245C 215C 150 100 Epoxy FR4 board 50 0 Metal-backed board t (s) 0 40 80 120 160 200 240 280 320 360 4/6 TS820-B/T PACKAGE MECHANICAL DATA DPAK (Plastic) DIMENSIONS REF. E B2 C2 L2 A Millimeters 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 0.80 0.60 0 1.00 8 0.023 0 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 0.086 0.035 0.001 0.025 0.204 0.017 0.018 0.236 0.251 0.173 Inches 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.259 0.181 0.397 0.031 0.039 8 Min. Typ. Max Min. Typ. Max. A A1 A2 B B2 D H L4 B G A1 C C2 D E C G H 10.10 0.368 A2 0.60 MIN. L2 L4 V2 V2 FOOT PRINT DIMENSIONS (in millimeters) 6.7 6.7 6.7 3 1.6 2.3 2.3 1.6 5/6 TS820-B/T PACKAGE MECHANICAL DATA TO-220AB(Plastic) REF. A C L5 DIMENSIONS Millimeters Inches Min. Max. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 14 2.95 15.75 Min. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.511 0.104 0.600 Max. 0.181 0.051 0.107 0.027 0.034 0.066 0.066 0.202 0.106 0.409 0.551 0.116 0.620 4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10 13 2.65 15.25 H2 Dia A C D E F F1 F2 L7 L6 L2 F2 F1 L9 L4 F G1 G M E D G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. 16.4 typ. 0.645 typ. 6.20 6.60 3.50 3.93 2.6 typ. 3.75 3.85 0.244 0.259 0.137 0.154 0.102 typ. 0.147 0.151 Type TS820-B Marking TS820x00B Package DPAK Weight 0.3 g. Base qty 75 2500 Delivery mode Tube Tape and Reel Tube TS820-T TS820x00T TO-220AB 2 g. 50 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsIbility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com 6/6 |
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