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 TS512,A
PRECISION DUAL OPERATIONAL AMPLIFIER
s LOW INPUT OFFSET VOLTAGE: s s s s s s s
500V max. LOW POWER CONSUMPTION SHORT CIRCUIT PROTECTION LOW DISTORTION, LOW NOISE HIGH GAIN-BANDWIDTH PRODUCT: 3MHz HIGH CHANNEL SEPARATION ESD INTERNAL PROTECTION LOW INPUT OFFSER CURRENT
N DIP8 (Plastic Package)
s MACROMODEL INCLUDED IN THIS
SPECIFICATION DESCRIPTION The TS512 is a high performance dual operational amplifier with frequency and phase compensation built into the chip. The internal phase compensation allows stable operation as voltage follower in spite of its high gain-bandwidth products. The circuit presents very stable electrical characteristics over the entire supply voltage range, and is particularly intended for professional and telecom applications (active filter, etc). PIN CONNECTIONS (top view)
D SO8 (Plastic Micropackage)
ORDER CODE
Package Part Number Temperature Range N TS512I TS512AI -40C, +125C -40C, +125C * * D * *
N = Dual in Line Package (DIP) D = Small Outline Package (SO) - also available in Tape & Reel (DT)
Output 1 1 Inverting Input 1 2 Non-inverting Input 1 3 VCC - 4 + +
8 7 6 5
VCC + Output Inverting Input 2 Non-inverting Input 2
November 2001
1/6
TS512, A
SCHEMATIC DIAGRAM (1/2 TS512)
VCC R16 4k Q25 Q11 Q2 Q12 R12 812 Q3 Q27 Q37 Inverting Input Q15 Q22 Q5 Q7 Q31 Q4 Q6 Q8 Q9 Q17 Q32 Q18 Q10 C1 43pF R3 60k R4 1.2k R7 15k Q19 R8 150k R9 15k Q23 Q33 R10 45k VCC Q34 Q20 C2 23pF Q28 Q36 Non-inverting Input R13 27 Output Q38 R17 4k R14 27 Q29 Q21 R1 2k R2 2k R5 4k R6 4k Q13 R11 1k Q14 R18 2k Q35
Q30
R15 150k
ABSOLUTE MAXIMUM RATINGS
Symbol VCC Vi Vid Toper ptot Tj Tstg
1.
Parameter Supply Voltage Input Voltage Differential Input Voltage Operating Free-Air Temperature Range Power Dissipation at Tamb = 70C Junction Temperature Storage Temperature Range
1)
Value 18 VCC (VCC - 1) -40 to +125 500 + 150 -65 to +150
Unit V
C mW C C
Power dissipation must be considered to ensure maximum junction temperature (Tj) is not exceeded.
2/6
TS512, A
ELECTRICAL CHARACTERISTICS VCC = 15V, Tamb = 25C (unless otherwise specified)
Symbol Icc Iib Ri Supply Current Input Bias Current Tmin Top Tmax Input Resistance, f = 1kHz Input Offset Voltage Vio Tmin Top Tmax Vio Iio Iio Ios Avd GBP en Input Offset Voltage Drift Tmin Top Tmax Input Offset Current Tmin Top Tmax Input Offset Current Drift Tmin Top Tmax Output Short Circuit Current Large Signal Voltage Gain RL = 2k Vcc = 15V Vcc = 4V 90 1.8 TS512 TS512A TS512 TS512A 2 5 20 40 0.5 2.5 0.5 3.5 1.5 V/C nA nA ------C mA dB MHz nV ----------Hz mv Parameter Min. Typ. 0.7 50 1 Max. 1.2 150 300 Unit mA nA M
0.08 23 100 95 3 8 10 18 0.03
Gain-bandwidth Product, f = 100kHz Equivalent Input Noise Voltage, f = 1kHz Rs = 50 Rs = 1k Rs = 10k Total Harmonic Distortion RL = 2k Av = 20dB f = 1kHz Vo = 2Vpp Output Voltage Swing RL = 2k Large Signal Voltage Swing RL = 10k Slew Rate Unity Gain, RL = 2k Common Mode Rejection Ratio Vic = 10V Supply Voltage Rejection Ratio Channel Separation, f = 1kHz Vcc = 15V Vcc = 4V f = 10kHz
THD
%
Vopp Vopp SR CMR SVR Vo1/Vo2
13 3 28 0.8 90 90 120 1.5
V Vpp V/s dB dB dB
3/6
TS512, A
MACROMODEL ** Standard Linear Ics Macromodels, 1993. ** CONNECTIONS : * 1 INVERTING INPUT * 2 NON-INVERTING INPUT * 3 OUTPUT * 4 POSITIVE POWER SUPPLY * 5 NEGATIVE POWER SUPPLY .SUBCKT TS512 1 3 2 4 5 (analog) ******************************************************** .MODEL MDTH D IS=1E-8 KF=6.565195E-17 CJO=10F * INPUT STAGE CIP 2 5 1.000000E-12 CIN 1 5 1.000000E-12 EIP 10 5 2 5 1 EIN 16 5 1 5 1 RIP 10 11 2.600000E+01 RIN 15 16 2.600000E+01 RIS 11 15 1.061852E+02 DIP 11 12 MDTH 400E-12 DIN 15 14 MDTH 400E-12 VOFP 12 13 DC 0 VOFN 13 14 DC 0 IPOL 13 5 1.000000E-05 CPS 11 15 12.47E-10 DINN 17 13 MDTH 400E-12 VIN 17 5 1.500000e+00 DINR 15 18 MDTH 400E-12 VIP 4 18 1.500000E+00 FCP 4 5 VOFP 3.400000E+01 FCN 5 4 VOFN 3.400000E+01 ELECTRICAL CHARACTERISTICS Vcc = 15V, Tamb = 25C (unless otherwise specified)
Symbol Vio Avd Icc Vicm VOH VOL Isink Isource GBP SR m 4/6 RL = 2k RL = 2k Vo = 0V Vo = 0V RL = 2k, CL = 100pF RL = 2k RL = 2k, CL = 100pF RL = 2k No load, per operator Conditions Value 0 100 350 -13.5 to 13.5 +13 -13 23 23 3 1.4 55 Unit mV V/mV A V V V mA mA MHz V/s Degrees
FIBP 2 5 VOFN 1.000000E-02 FIBN 5 1 VOFP 1.000000E-02 * AMPLIFYING STAGE FIP 5 19 VOFP 9.000000E+02 FIN 5 19 VOFN 9.000000E+02 RG1 19 5 1.727221E+06 RG2 19 4 1.727221E+06 CC 19 5 6.000000E-09 DOPM 19 22 MDTH 400E-12 DONM 21 19 MDTH 400E-12 HOPM 22 28 VOUT 6.521739E+03 VIPM 28 4 1.500000E+02 HONM 21 27 VOUT 6.521739E+03 VINM 5 27 1.500000E+02 GCOMP 5 4 4 5 6.485084E-04 RPM1 5 80 1E+06 RPM2 4 80 1E+06 GAVPH 5 82 19 80 2.59E-03 RAVPHGH 82 4 771 RAVPHGB 82 5 771 RAVPHDH 82 83 1000 RAVPHDB 82 84 1000 CAVPHH 4 83 0.331E-09 CAVPHB 5 84 0.331E-09 EOUT 26 23 82 5 1 VOUT 23 5 0 ROUT 26 3 6.498455E+01 COUT 3 5 1.000000E-12 DOP 19 25 MDTH 400E-12 VOP 4 25 1.742230E+00 DON 24 19 MDTH 400E-12 VON 24 5 1.742230E+00 .ENDS
TS512, A
PACKAGE MECHANICAL DATA 8 PINS - PLASTIC DIP
Millimeters Dim. Min. A a1 B b b1 D E e e3 e4 F i L Z 0.51 1.15 0.356 0.204 7.95 2.54 7.62 7.62 6.6 5.08 3.81 1.52 Typ. 3.32 1.65 0.55 0.304 10.92 9.75 0.020 0.045 0.014 0.008 0.313 Max. Min.
Inches Typ. 0.131 0.065 0.022 0.012 0.430 0.384 0.100 0.300 0.300 0260 0.200 0.150 0.060 Max.
3.18
0.125
5/6
TS512, A
PACKAGE MECHANICAL DATA 8 PINS - PLASTIC MICROPACKAGE (SO)
L
C a3
c1
a2
A
s e3 E
D M
8
5
F
1
4
Millimeters Dim. Min. A a1 a2 a3 b b1 C c1 D E e e3 F L M S 0.1 0.65 0.35 0.19 0.25 4.8 5.8 1.27 3.81 3.8 0.4 4.0 1.27 0.6 8 (max.) 0.150 0.016 Typ. Max. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 5.0 6.2 0.189 0.228 Min. 0.004 0.026 0.014 0.007 0.010
a1
b
Inches Typ. Max. 0.069 0.010 0.065 0.033 0.019 0.010 0.020 0.197 0.244 0.050 0.150 0.157 0.050 0.024
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2001 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States (c) http://www.st.com
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b1


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