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| (R) BUL38D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s s s s s STM PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTS VERY HIGH SWITCHING SPEED FULLY CHARACTERISED AT 125oC HIGH RUGGEDNESS INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE TO-220 1 2 3 APPLICATIONS s ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS s SWITCH MODE POWER SUPPLIES DESCRIPTION The BUL38D is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage withstand capability. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P t ot T stg Tj June 1998 Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp <5 ms) Base Current Base Peak Current (tp <5 ms) Total Dissipation at T c = 25 C Storage Temperature Max. O perating Junction Temperature o Value 800 450 9 5 10 2 4 80 -65 to 150 150 Uni t V V V V A A A W o o C C 1/6 BUL38D THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 1.56 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I CEO V CEO(sus) V EBO V CE(sat ) Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (IB = 0) Collector-Emitter Sustaining Voltage Emitter-Base Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current G ain Test Cond ition s V CE = 800 V V CE = 800 V V CE = 450 V I C = 100 mA I E = 10 mA IC = 1 A IC = 2 A IC = 3 A IC = 1 A IC = 2 A IB = 0.2 A IB = 0.4 A IB = 0.75 A IB = 0.2 A IB = 0.4 A 8 13 22 10 1 55 1.3 100 2.5 L = 25 mH 450 9 0.5 0.7 1.1 1.1 1.2 23 32 Tj = 125 oC Min. Typ . Max. 100 500 250 Un it A A A V V V V V V V V BE(s at) h FE I C = 2 A VCE = 5 V Group A Group B I C = 10 mA V CE = 5 V IC = 2 A V BE(of f) = -5 V V CL = 250 V IC = 2 A V BE(of f) = -5 V V CL = 250 V T j = 125 o C IC = 2 A IB1 = 0.4 A R BB = 0 L = 200 H IB1 = 0.4 A R BB = 0 L = 200 H ts tf ts tf Vf INDUCTIVE LOAD Storage Time Fall T ime INDUCTIVE LOAD Storage Time Fall T ime Diode Forward Voltage 1.8 100 s ns s ns V Pulsed: Pulse duration = 300 s, duty cycle 1.5 % Note : Product will be pre-selected in DC current gain (GROUP A and GROUP B) starting from August '98 datacode. SGS-THOMSON reserves the right to ship either groups according to production availability. Please contact your nearest SGS THOMSON MICROELECTRONICS sales office for delivery details. Safe Operating Areas Reverse Biased SOA 2/6 BUL38D Derating Curve DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Inductive Storage Time 3/6 BUL38D Inductive Fall Time RBSOA and Inductive Load Switching Test Circuit (1) Fast electronic switch (2) Non-inductive Resistor (3) Fast recovery rectifier 4/6 BUL38D TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 P011C 5/6 BUL38D Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical compone nts in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. . 6/6 |
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