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| BDX53BFP SILICON POWER DARLINGTON TRANSISTOR APPLICATIONS: s GENERAL PURPOSE SWITCHING AND AMPLIFIER s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT s FULLY MOLDED ISOLATED PACKAGE s 2000 V DC ISOLATION (U.L. COMPLIANT) DESCRIPTION The BDX53BFP is a silicon epitaxial-base NPN power transistor in monolithic Darlington configuration and are mounted in T0-220FP fully molded isolated package. It is intented for use in hammer drivers, audio amplifiers and other medium power linear and switching applications. 3 1 2 T0-220FP INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 10 K R 2 Typ. = 150 ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB P t ot T stg Tj Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Current Collector Peak Current (repetitive) Base Current Total Dissipation at T c 25 o C Storage Temperature Max. O perating Junction Temperature Value 80 80 5 8 12 0.2 29 -65 to 150 150 Uni t V V V A A A W o o C C April 1998 1/4 BDX53BFP THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 4.3 70 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO I CEO I EBO Parameter Collector Cut-off Current (IE = 0) Collector Cut-off Current (IB = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CB = 80 V V CB = 40 V V EB = 5 V I C = 100 mA Min. Typ . Max. 0.2 0.5 2 Un it mA mA mA V V CEO(sus ) Collector-Emitter Sustaining Voltage (IB = 0) V CE(sat ) V BE(s at) hFE V F Collector-emitter Saturation Voltage Base-emitter Saturation Voltage DC Current G ain Parallel-diode Forward Voltage 80 IC = 3 A IC = 3 A IC = 3 A IF = 3 A IF = 8 A I B =12 mA I B =12 mA V CE = 3 V 750 1.8 2.5 2 2.5 V V 2.5 V V Pulsed: Pulse duration = 300 s, duty cycle 1.5 % Safe Operating Area 2/4 BDX53BFP TO-220FP MECHANICAL DATA DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 O 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 0.354 0.118 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 A B L3 L6 L7 F1 F D G1 E H F2 123 L2 L4 G 3/4 BDX53BFP Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 4/4 |
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