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| (R) BUX48C/BUV48C BUV48CFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS s s s s SGS-THOMSON PREFERRED SALESTYPES NPN TRANSISTORS HIGH VOLTAGE CAPABILITY FAST SWITCHING SPEED s APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 1 2 TO-3 2 1 3 TO-218 DESCRIPTION The BUX48C, BUV48C and BUV48CFI are silicon multiepitaxial mesa NPN transistors mounted respectively in TO-3 metal case, TO-218 plastic package and ISOWATT218 fully isolated package. They are particulary intended for switching and industrial applications from single and tree-phase mains. 3 2 1 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CER V CES V CEO V EBO IC I CM ICP IB I BM P tot T stg Tj June 1998 Parameter Collector-Emitter Voltage (R BE = 10) Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p <5ms) Collector Peak Current non repetitive (t p <20s) Base Current Base Peak Current (tp <5ms) TO-3 Total Dissipation at T c = 25 C Storage Temperature Max. Operating Junction Temperature o Value 1200 1200 700 7 15 30 55 4 20 TO-218 125 150 ISOWATT218 55 -65 to 150 150 175 200 Unit V V V V A A A A A W o o -65 to 200 -65 to 150 C C 1/6 BUX48C/BUV48C/BUV48CFI THERMAL DATA TO-3 R thj-case Thermal Resistance Junction-case Max 1 TO-218 1 ISOWATT218 2.2 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CER I CES I CEO I EBO Parameter Collector Cut-off Current (R BE = 10 ) Collector Cut-off Current (V BE = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 1200 V V CE = 1200 V V CE = 1200 V V CE = 1200 V V CE = V CEO V EB = 6 V I C = 100 mA I C = 0.5 A L = 2 mH IC = 6 A I C = 10 A IC = 6 A I C = 10 A V clamp = 1200 V I B = 1.5 A IB = 4 A I B = 1.5 A IB = 4 A 700 1200 1.5 3 1.5 2 T case = 125 o C T case = 125 o C Min. Typ. Max. 500 4 500 3 1 1 Unit A mA A mA mA mA V V V V V V V CEO(SUS) Collector-Emitter Sustaining Voltage (I B = 0) V CER(SUS) V CE(sat) V BE(sat) Collector-Emitter Sustaining Voltage (R BE = 10 ) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Pulsed: Pulse duration = 300 s, duty cycle 1.5 % RESISTIVE SWITCHING TIMES Symbol t on ts tf Parameter Turn-on Time Storage Time Fall Time Test Conditions V CC = 250 V I B1 = - I B2 = 1.5 A IC = 6 A Min. Typ. 0.5 1.5 0.2 Max. 1 3 0.7 Unit s s s INDUCTIVE SWITCHING TIMES Symbol ts tf ts tf Parameter Storage Time Fall Time Storage Time Fall Time Test Conditions VCC = 250 V I B1 = - I B2 = 1.5 A VCC = 250 V I B1 = - I B2 = 1.5 A T C = 125 o C IC = 6 A IC = 6 A Min. Typ. 2 0.15 3 0.33 6 0.60 Max. Unit s s s s 2/6 BUX48C/BUV48C/BUV48CFI TO-3 MECHANICAL DATA mm MIN. A B C D E G N P R U V 11.00 0.97 1.50 8.32 19.00 10.70 16.50 25.00 4.00 38.50 30.00 TYP. MAX. 13.10 1.15 1.65 8.92 20.00 11.10 17.20 26.00 4.09 39.30 30.30 MIN. 0.433 0.038 0.059 0.327 0.748 0.421 0.649 0.984 0.157 1.515 1.187 inch TYP. MAX. 0.516 0.045 0.065 0.351 0.787 0.437 0.677 1.023 0.161 1.547 1.193 DIM. P G A D C U V O N R B P003F E 3/6 BUX48C/BUV48C/BUV48CFI TO-218 (SOT-93) MECHANICAL DATA mm MIN. A C D E F G H L2 L3 L5 L6 R O - 4 3.95 31 12.2 4.1 - 0.157 0.5 1.1 10.8 14.7 - 18 4.15 0.155 1.220 0.480 0.161 4.7 1.17 2.5 0.78 1.3 11.1 15.2 16.2 0.019 0.043 0.425 0.578 - 0.708 0.163 TYP. MAX. 4.9 1.37 MIN. 0.185 0.046 0.098 0.030 0.051 0.437 0.598 0.637 inch TYP. MAX. 0.193 0.054 DIM. A C L5 L3 L2 L6 D E H F R 123 P025A 4/6 G BUX48C/BUV48C/BUV48CFI ISOWATT218 MECHANICAL DATA DIM. MIN. A C D D1 E F G H L1 L2 L3 L4 L5 L6 M N U 5.35 3.3 2.9 1.88 0.75 1.05 10.8 15.8 20.8 19.1 22.8 40.5 4.85 20.25 3.5 2.1 4.6 mm TYP. MAX. 5.65 3.8 3.1 2.08 1 1.25 11.2 16.2 21.2 19.9 23.6 42.5 5.25 20.75 3.7 2.3 MIN. 0.210 0.130 0.114 0.074 0.029 0.041 0.425 0.622 0.818 0.752 0.897 1.594 0.190 0.797 0.137 0.082 0.181 inch TYP. MAX. 0.222 0.149 0.122 0.081 0.039 0.049 0.441 0.637 0.834 0.783 0.929 1.673 0.206 0.817 0.145 0.090 L3 N A E L2 L5 L6 D1 C D M U F H 123 L1 L4 P025C 5/6 G BUX48C/BUV48C/BUV48CFI Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. . 6/6 |
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