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| (R) Z04xxxF SENSITIVE GATE TRIACS FEATURES IT(RMS) = 4A VDRM = 400V to 800V IGT 3mA to 25mA DESCRIPTION The Z04xxxF series of triacs uses a high performance TOP GLASS PNPN technology. These parts are intended for general purpose applications where high gate sensitivity or high switching performances are required (like touch dimmers, fan, electrovalue control,...). A1 A2 G TO202-3 (Plastic) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) Parameter RMS on-state current (360 conductionangle) Non repetitive surge peak on-state current (Tj initial = 25C ) I2t Value for fusing Critical rate of rise of on-state current IG = 50 mA diG /dt = 0.1 A/s. Tc= 75 C Ta= 25 C tp = 8.3 ms tp = 10 ms I2 t dI/dt tp = 10 ms Repetitive F = 50 Hz Non Repetitive Tstg Tj Tl Storage and operating junction temperature range Maximum lead temperature for soldering during 10s at 4.5mm from case Value 4 0.95 22 20 2 10 50 - 40, + 150 - 40, + 125 260 C C A2s A/s A Unit A ITSM Symbol VDRM VRRM Parameter D Repetitive peak off-state voltage Tj = 125C 400 Voltage M 600 N 800 Unit V August 1998 Ed : 1A 1/4 Z04xxxF THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-c) Rth(j-c) Junction to ambient Junction to case for D.C Junction to case for A.C 360conduction angle (F=50Hz) Parameter Value 100 10 7.5 Unit C/W C/W C/W GATE CHARACTERISTICS PG (AV)= 0.2 W max. PGM = 3 W max. (tp = 20 s) VGD = 0.2Vmin. (VD=VDRM RL=3.3k Tj= 125C) ELECTRICAL CHARACTERISTICS Symbol IGT VGT IH * IL Test Conditions VD=12V (DC) RL=33 VD=12V (DC) RL=33 IT= 50 mA Gate open IG= 1.2 IGT Tj= 25C Tj= 25C Tj= 25C Tj= 25C I-III-IV II VTM * IDRM IRRM dV/dt * (dV/dt)c * ITM= 5.5A tp= 380s VD = VDRM VR = VRRM VD=67%VDRM Gate open (dI/dt)c = 1.3 A/ms (dI/dt)c = 1.8 A/ms Tj= 25C Tj= 25C Tj= 110C Tj= 110C Tj= 110C Tj= 110C Quadrant 02 I-II-III-IV I-II-III-IV MAX MAX MAX MAX MAX MAX MAX MAX MIN MIN MIN 10 0.5 20 1 3 6 12 5 10 15 2 5 200 100 2 5 200 V/s V/s V/s 3 Sensitivity 05 5 1.5 10 15 25 25 25 50 V A 09 10 10 25 mA V mA mA Unit IGM = 1.2 A max. (tp = 20 s) * For either polarity of electrode A2 voltage with reference to electrodeA 1 ORDERING INFORMATION Z TRIAC TOP GLASS CURRENT 04 05 SENSITIVITY M F PACKAGE : F=TO202-3 VOLTAGE 2/4 Z04xxxF Fig.1 : Maximum RMS power dissipation versus RMS on-state current. Fig.2 : Correlation between maximum RMS power dissipation and maximum allowable temperature (Tamb and Tcase). P (W) 180 O P(W) Tcase (oC) 7 6 5 4 3 2 1 0 0 7 = 180 = 120 = 90 o o o 6 5 4 3 -75 Rth(j-c) -85 -95 -105 = 60 = 30 o o 2 I T(RMS) (A) 1 4 0 0 Tamb ( C) o Rth(j-a) -115 -125 140 1 2 3 20 40 60 80 100 120 Fig.3 : RMS on-state current versus case temperature. I T(RMS) (A) Fig.4 : Relative variation of thermal impedance junction to ambient versus pulse duration. Zth(j-a)/Rth(j-a) 1.00 1 0.8 0.6 = 180 o 0.4 0.2 0.10 Tamb(oC) 0 0 tp( s) 10 20 30 40 50 60 70 80 90 100 110 120 130 0.01 1E-3 1E-2 1E-1 1 E +0 1 E +1 1E +2 5 E +2 Fig.5 : Relativevariation of gate trigger current and holding current versus junction temperature. Igt[Tj] o Igt[Tj=25 C] Ih[Tj] o Ih[Tj=25 C] Fig.6 : Non repetitive surge peak on-state current versus number of cycles. ITSM(A) 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 Igt 20 Tj initial = 25 C o 15 10 Ih 5 Tj(oC) Number of cycles -40 -20 0 20 40 60 80 100 120 140 0 1 10 100 1000 3/4 Z04xxxF Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp 10ms, and corresponding value of I2t. I TSM (A). I2 t (A 2 s) Fig.8 : On-statecharacteristics(maximum values). I TM (A) 100 Tj initial = 25oC 100 I TSM 10 Tj initial o 25 C 10 Tj max 1 It 2 Tj max Vto =0.98 V Rt =0.180 tp (ms) VTM (V) 1 1 10 0.1 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 PACKAGE MECHANICAL DATA TO202-3 (Plastic) DIMENSIONS REF. A A C Millimeters Typ. Max. 10.1 7.3 10.5 7.4 1.5 0.51 1.5 4.5 5.3 2.54 1.4 0.7 Inches Typ. Max. 0.398 0.287 0.413 0.290 0.059 0.020 0.059 0.177 0.209 0.100 0.055 0.028 C O F P N1 N M D J H D E F H J M N N1 O P Marking : type number Weight : 1 g Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsIbility for the consequences of use of such information nor for any infringementof patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 4/4 |
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