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HN62454N Series
262144-word x 16-bit /524288-word x 8-bit CMOS Mask Programmable ROM
ADE-203-404A (Z) Rev. 1.0 May. 21, 1996 Description
The HN62454N is a 4-Mbit CMOS mask-Programmable ROM organized either as 262144 wordsby 16 bits or 524288 words by 8 bits. Realizing low power consumption, this memory is allowed for battery operation. And a high speed access of 100 ns (max) is the most suitable to the system using a high speed microcomputer by 16 bits.
Features
* Single 5 V supply * High speed Normal access time: 100 ns (max) Page access time: 40 ns (max) * Low power Active: 550 mW (max) Standby: 165 W (max) * Byte-wide or word-wide data organization (Switched by BHE terminal) * 4 word page access on word-wide mode * 8 byte page access on byte-wide mode * Three-state data output for or-tying * Directly TTL compatible All inputs and outputs * Pin compatible with 4 Mbit EPROM (HN27C4000G/FP)
Ordering Information
Type No. HN62454NP-10 HN62454NFA-10 HN62454NTT-10 Access time 100 ns 100 ns 100 ns Package 600 mil 40-pin plastic DIP (DP-40) 525 mil 40-pin plastic SOP (FP-40D) 400 mil 44-pin plastic TSOP II (TTP-44D)
HN62454N Series
Pin Arrangement
HN62454NP Series A17 A7 A6 A5 A4 A3 A2 A1 A0 CE VSS OE D0 D8 D1 D9 D2 D10 D3 D11 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 (Top view) HN62454NFA Series A17 A7 A6 A5 A4 A3 A2 A1 A0 CE VSS OE D0 D8 D1 D9 D2 D10 D3 D11 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 (Top view) 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 A8 A9 A10 A11 A12 A13 A14 A15 A16 BHE VSS D15/A-1 D7 D14 D6 D13 D5 D12 D4 VCC 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 A8 A9 A10 A11 A12 A13 A14 A15 A16 BHE VSS D15/A-1 D7 D14 D6 D13 D5 D12 D4 VCC NC NC A17 A7 A6 A5 A4 A3 A2 A1 A0 CE VSS OE D0 D8 D1 D9 D2 D10 D3 D11
HN62454NTT Series 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 (Top view) 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 NC NC A8 A9 A10 A11 A12 A13 A14 A15 A16 BHE VSS D15/A-1 D7 D14 D6 D13 D5 D12 D4 VCC
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HN62454N Series
Pin Description
Pin name A2 to A17 A-1, A0, A1 D0 to D15 BHE CE OE NC VCC VSS Function Address inputs Page address inputs Data outputs 8/16 bit (byte/word) mode switch Chip enable Output enable No connection Power supply Ground
Block Diagram
A12 A2 X Decoder Memory Array
A17 A13
Address Buffer Y Decoder Y Gates
A1 Page Decoder A0
(A-1) *1 Hex / Byte BHE OE 3-state output buffer CE BHE = VIH : 16-bit (D15 to D0) BHE = VIL : 8-bit (D7 to D0) Note: 1. A-1 is least significant address. When BHE is 'low', D14 to D8 goes the high impedance state, and D15 should be A-1. D0 D15/(D7)
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HN62454N Series
Mode Selection
Pin Data output Mode Standby Output disable Read (16-bit) Read (8-bit) Read (8-bit) CE H L L L L OE x* H L L L
1
Address input D8-D15 LSB -- -- A0 A-1 A-1 MSB -- -- A17 A17 A17
BHE x x H L L
D15/A-1 D0-D7 x x Dout L H High-Z* High-Z D0 to D7 D0 to D7 D8 to D15
2
High-Z High-Z D8 to D15 High-Z High-Z
Notes: 1. x: Don't care. 2. High-Z: High impedance
Absolute Maximum Ratings
Parameter Supply voltage*
1 1
Symbol VCC Vin, Vout Topr Tstg Tbias
Value -0.3 to + 7.0 -0.3 to VCC +0.3 0 to +70 -55 to +125 -20 to +85
Unit V V C C C
All input and output voltage*
Operating temperature range Storage temperature range Temperature under bias Note: 1. With respect to V SS .
Recommended DC Operating Conditions (Ta = 0 to + 70C)
Parameter Supply voltage Symbol VCC VSS Input Voltage VIH VIL Min 4.5 0 2.2 -0.3 Typ 5.0 0 -- -- Max 5.5 0 VCC + 0.3 0.8 Unit V V V V
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HN62454N Series
DC Characteristics (VCC = 5.0 V 10%, VSS = 0 V, Ta = 0 to + 70C)
Parameter Supply current Active Symbol I CC Min -- -- -- -- -- 2.4 -- Max 100 30 3 10 10 -- 0.4 Unit mA A mA A A V V Test conditions VCC = 5.5 V, IDOUT = 0 mA, tRC = 100 ns VCC = 5.5 V, CE VCC - 0.2 V VCC = 5.5 V, CE 2.2 V Vin = 0 to VCC CE = 2.2 V, Vout = 0 to V CC I OH = -205 A I OL = 1.6 mA
Standby I SB1 Standby I SB2 Input leakage current Output leakage current Output voltage |IIL| |IOL | VOH VOL
Capacitance (VCC = 5.0 V 10%, VSS = 0 V, Ta = 25C, Vin = 0 V, f = 1MHz)
Parameter Input capacitance
*1 *1
Symbol Cin Cout
Min -- --
Max 10 15
Unit pF pF
Output capacitance Note:
1. This parameter is sampled and not 100% tested. D15/A-1 pin is output.
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HN62454N Series
AC Characteristics (VCC = 5.0 V 10%, VSS = 0 V, Ta = 0 to + 70C)
* * * * Output load: 1TTL + CL = 100 pF (including jig) Input pulse level: 0.45 to 2.4 V Input and output timing reference levels: 1.5 V Input rise and fall time: 5 ns
HN62454N-10 Parameter Read cycle time Page read cycle time Address access Page address access time CE access time OE access time BHE access time Output hold time from address change Output hold time from CE Output hold time from OE Output hold time from BHE CE to output in high-Z OE to output in high-Z BHE to output in high-Z CE to output in low-Z OE to output in low-Z BHE to output in low-Z Note: Symbol t RC t PC t AA t PA t ACE t OE t BHE t DHA t DHC t DHO t DHB t CHZ t OHZ t BHZ t CLZ t OLZ t BLZ Min 100 40 -- -- -- -- -- 0 0 0 0 -- -- -- 5 5 5 Max -- -- 100 40 100 40 100 -- -- -- -- 30 30 30 -- -- -- Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 1 1 1 Note
1. t CHZ, tOHZ and t BHZ are defined as the time at which the output achieves the open circuit conditions and are not referred to output voltage levels.
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HN62454N Series
Timing Waveforms
Word Mode (BHE = `VIH') or Byte Mode (BHE = `VIL')
t RC Address t AA t ACE CE t CLZ t OE OE t OLZ Dout High-Z Valid data t DHO t OHZ High-Z t DHC t CHZ t DHA
Notes: 1. tDHA, t DHC, tDHO: Determined by faster. 2. t AA, tACE , tOE: Determined by slower. 3. t CLZ , t OLZ : Determined by slower.
Word Mode, Byte Mode Switch
High-Z High-Z
A-1
t AA
BHE
t DHA
t BHZ
D7 to D0 Valid data
t BHE
Valid data
t DHB
D15 to D8
t BLZ High-Z
Valid data
Notes: 1. CE and OE are enable A17 to A0 are valid. 2. D15/A-1 pin is in the output state when BHE is high, CE and OE are enable. Therefore, the input signals of opposite phase to the output must not be applied to them.
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HN62454N Series
Page Mode
A2 to A18
t RC
A0, A1, (A-1)
t PC
t PC
t PC
t PA t AA t DHA
t PA t DHA
t PA t DHA t DHA
Dout
Valid data
Valid data
Valid data
Valid data
Notes: 1. Page address is determined as below. Word mode (BHE = 'High'): A0, A1 Byte mode (BHE = 'Low'): A-1, A0, A1 2. CE and OE are enable.
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HN62454N Series
Package Dimensions
HN62454NP Series (DP-40)
Unit: mm
40
52.8 53.8 Max
21 13.4 14.6 Max 2.54 Min 5.08 Max
1
1.2
20
15.24
0.51 Min
2.54 0.25
0.48 0.10
0.25 - 0.05 0 - 15
+ 0.11
HN62454NFA Series (FP-40D)
Unit: mm
26.00 26.20 Max 40 21 10.70 1 1.10 Max 20 2.80 Max
0.17 0.05
14.13 0.30 1.72
0.10 0.12 M
0.09 Min
1.27 0.40 0.10
0 - 10 0.8 0.2
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HN62454N Series
HN62454NTT Series (TTP-44D)
Unit: mm
18.41 18.81 Max 44 23
1 0.30 0.10
0.80 0.13 M
22
10.16
11.76 0.20 0 - 5
1.20 Max
0.17 0.05
0.10
10
0.08 Min 0.16 Max 0.50 0.10
HN62454N Series
When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS.
Hitachi, Ltd.
Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207
Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Strae 3 D-85622 Feldkirchen Munchen Tel: 089-9 91 80-0 Fax: 089-9 29 30 00
Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322
Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071
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HN62454N Series
Revision Record
Rev. 0.0 0.1 Date Jun. 20, 1995 Jul. 19, 1995 Contents of Modification Initial issue Drawn by M. Shirai Approved by T. Wada T. Wada
Change of Type No. M. Shirai HN62454NP-8 to HN62454NP-85 HN62454NFP-8 to HN62454NFP-85 HN62454NTT-8 to HN62454NTT-85 DC Characteristics I CC Test condition: tRC = 80/100 ns to tRC = 85/100 ns AC Characteristics t RC (min): 80/100 ns to 85/100 ns t AA (max): 80/100 ns to 85/100 ns t ACE (max): 80/100 ns to 85/100 ns t BHE (max): 80/100 ns to 85/100 ns Change of Format Deretion of HN62454N-85 Series DC Characteristics I CC (max): 120/100 ns to 100 ns I CC Test condition: tRC = 85/100 ns to tRC = 100 ns
1.0
May. 21, 1996
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