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| VP0808L, VP1008L Vishay Siliconix P-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number VP0808L VP1008L V(BR)DSS Min (V) -80 -100 rDS(on) Max (W) 5 @ VGS = -10 V 5 @ VGS = -10 V VGS(th) (V) -2 to -4.5 -2 to -4.5 ID (A) -0.28 -0.28 FEATURES D D D D D High-Side Switching Low On-Resistance: 2.5 W Moderate Threshold: -3.4 V Fast Switching Speed: 40 ns Low Input Capacitance: 75 pF BENEFITS D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Switching Easily Driven Without Buffer APPLICATIONS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Power Supply, Converter Circuits D Motor Control TO-226AA (TO-92) S 1 G 2 VP0808L VP1008L 3 D Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta Power Dissipation Maximum Junction-to-Ambient Maximum Junction-to-Case Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. Document Number: 70218 S-00530--Rev. C, 03-Apr-00 www.vishay.com S FaxBack 408-970-5600 TA= 25_C TA= 100_C TA= 25_C TA= 100_C Symbol VDS VGS ID IDM PD RthJA RthJC TJ, Tstg VP0808L -80 "30 -0.28 -0.17 -3 0.8 0.32 156 VP1008L -100 "30 -0.28 -0.17 -3 0.8 0.32 156 Unit V A W _C/W _C -55 to 150 11-1 VP0808L, VP1008L Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits VP0808L VP1008L Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Symbol Test Conditions Typa Min Max Min Max Unit V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = -10 mA VDS = VGS, ID = -1 mA VDS = 0 V, VGS = "20 V TJ = 125_C VDS = -80 V, VGS = 0 V -110 -3.4 -80 -2 -4.5 "100 "500 -10 -500 -100 V -2 -4.5 "100 "500 nA Zero Gate Voltage Drain Current Z G Vl DiC IDSS TJ = 125_C VDS = -100 V, VGS = 0 V TJ = 125_C -10 -500 -2 2.5 4.4 325 0.45 200 -1.1 5 8 200 -1.1 5 8 mA A On-State Drain Currentb Drain-Source On-Resistanceb Forward Transconductanceb Common Source Output Conductanceb ID(on) rDS(on) gfs gos VDS = -15 V, VGS = -10 V VGS = -10 V, ID = -1 A TJ = 125_C VDS = -10 V, ID = -0.5 A VDS = -7.5 V, ID = -0.1 A A W mS S Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS = -25 V VGS = 0 V 25 V, f = 1 MHz 75 40 18 150 60 25 150 60 25 pF F Switchingc Turn-On Time td(on) tr Turn-Off Time td(off) tf Notes a. For DESIGN AID ONLY, not subject to production testing.. b. Pulse test: PW v300 ms duty cycle v2%. c. Switching time is essentially independent of operating temperature. VDD = -25 V, RL = 47 W 25 V ID ^ -0.5 A, VGEN = -10 V RG = 25 W 11 30 20 20 15 40 30 30 15 40 ns 30 30 VPDV10 www.vishay.com S FaxBack 408-970-5600 11-2 Document Number: 70218 S-00530--Rev. C, 03-Apr-00 VP0808L, VP1008L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Ohmic Region Characteristics -2.0 TJ = 25_C -1.6 I D - Drain Current (A) VGS = -10 V -9 V I D - Drain Current (mA) -16 -20 TJ = 25_C VGS = -4.0 V Output Characteristics for Low Gate Drive -1.2 -8 V -12 -3.8 V -7 V -0.8 -6 V -0.4 -5 V -4 V 0 0 -1 -2 -3 -4 -5 VDS - Drain-to-Source Voltage (V) -8 -3.2 V -4 -3.6 V -3.4 V 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 VDS - Drain-to-Source Voltage (V) Transfer Characteristics -0.5 TJ = -55_C r DS(on)- On-Resistance ( W ) -0.4 I D - Drain Current (A) VDS = -10 V -0.3 125_C 25_C 7 On-Resistance vs. Gate-to-Source Voltage TJ = 25_C 6 I D = 0.1 A 5 4 0.5 A 3 2 1 1.0 A -0.2 -0.1 0 0 -2 -4 -6 -8 -10 VGS - Gate-Source Voltage (V) 0 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V) On-Resistance vs. Drain Current 10 r DS(on) Drain-Source On-Resistance ( W ) - 2.00 Normalized On-Resistance vs. Junction Temperature VGS = -10 V ID = 0.5 A r DS(on) Drain-Source On-Resistance - (Normalized) -2.0 -2.5 -3.0 8 1.75 1.50 6 1.25 4 VGS = -10 V 2 1.00 0.75 0 0 -0.5 -1.0 -1.5 0.50 -50 -10 30 70 110 150 ID - Drain Current (A) TJ - Junction Temperature (_C) www.vishay.com S FaxBack 408-970-5600 Document Number: 70218 S-00530--Rev. C, 03-Apr-00 11-3 VP0808L, VP1008L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Region -10 VDS = -5 V 160 I D - Drain Current (mA) -1 TJ = 150_C 25_C C - Capacitance (pF) 200 VGS = 0 V f = 1 MHz Capacitance 120 Ciss Coss 40 Crss 125_C -0.1 -55_C 80 -0.01 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 0 0 -10 -20 -30 -40 -50 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Gate Charge -15.0 ID = -0.5 A V GS - Gate-to-Source Voltage (V) -12.5 t - Switching Time (ns) 100 Drive Resistance Effects on Switching tr tf td(off) 10 td(on) -10.0 VDS = -50 V -7.5 -80 V -5.0 -2.5 VDD = -25 V RL = 50 W VGS = 0 to -10 V ID = -500 mA 1 0 0 100 200 300 400 500 Qg - Total Gate Charge (pC) 10 20 50 RG - Gate Resistance (W) 100 Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 t1 Notes: PDM 0.01 Single Pulse t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 156_C/W 3. TJM - TA = PDMZthJA(t) 0.01 0.1 1 10 100 1K 10 K t1 - Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 11-4 Document Number: 70218 S-00530--Rev. C, 03-Apr-00 |
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