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| 2N3958 Monolithic N-Channel JFET Dual Product Summary VGS(off) (V) -1.0 to -4.5 V(BR)GSS Min (V) -50 gfs Min (mS) 1 IG Max (pA) -50 jVGS1 - VGS2j Max (mV) 25 Features D D D D D D Monolithic Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: 5 pA Low Noise: 9 nVHz High CMRR: 100 dB Benefits D Tight Differential Match vs. Current D Improved Op Amp Speed, Settling Time Accuracy D Minimum Input Error/Trimming Requirement D Insignificant Signal Loss/Error Voltage D High System Sensitivity D Minimum Error with Large Input Signal Applications D Wideband Differential Amps D High-Speed, Temp-Compensated, Single-Ended Input Amps D High Speed Comparators D Impedance Converters Description The low cost 2N3958 JFET dual is designed for high-performance differential amplification for a wide range of precision test instrumentation applications. This series features tightly matched specs, low gate leakage for accuracy, and wide dynamic range with IG guaranteed at VDG = 20 V. The hermetically-sealed TO-71 package is available with full military processing (see Military Information and the 2N5545/5546/5547JANTX/JANTXV data sheet). For similar products see 2N5196/5197/5198/5199, the low-noise U/SST401 series, the high-gain 2N5911/5912, and the low-leakage U421/423 data sheets. TO-71 S1 1 D1 2 3 G1 Top View 4 6 5 G2 D2 S2 Absolute Maximum Ratings Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . -50 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . 300 _C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 200_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . -55 to 150_C Power Dissipation : Per Sidea . . . . . . . . . . . . . . . . . 250 mW Totalb . . . . . . . . . . . . . . . . . . . . 500 mW Notes a. Derate 2 mW/_C above 85_C b. Derate 4 mW/_C above 85_C Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70256. Siliconix P-37995--Rev. A, 11-Aug-94 1 2N3958 Specificationsa Limits Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentc Gate Reverse Current V(BR)GSS VGS(off) IDSS IGSS IG = -1 mA, VDS = 0 V VDS = 20 V, ID = 1 nA VDS = 20 V, VGS = 0 V VGS = -30 V, VDS = 0 V TA = 150_C VDG = 20 V, ID = 200 mA TA =125_C VDG = 20 V, ID = 200 mA ID = 50 mA IG = 1 mA, VDS = 0 V -0.5 -50 -1.0 0.5 -57 -2 3 -10 -20 -5 -0.8 -1.5 -4.5 5 -100 -500 -50 -250 -4 -4.2 2 V mA pA nA pA nA V Symbol Test Conditions Min Typb Max Unit Gate Operating Current IG Gate-Source Gate Source Voltage Gate-Source Forward Voltage VGS VGS(F) Dynamic Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Drain-Gate Capacitance Equivalent Input Noise Voltage Noise Figure gfs gos Ciss Crss Cdg en NF VDS = 20 V VGS = 0 V V, f = 1 MHz VDG = 10 V, IS = 0 , f = 1 MHz VDS = 20 V, VGS = 0 V, f = 1 kHz VDS = 20 V, VGS = 0 V f = 100 Hz, RG = 10 MW 9 0.5 VDS = 20 V, VGS = 0 V f = 1 kHz 1 2.5 2 3 1 3 35 4 1.2 1.5 nV Hz dB pF mS mS Matching Differential Gate-Source Voltage Gate-Source Voltage Differential Change with Temperature Saturation Drain Current Ratio |V GS1-V GS2| D|V GS1-V GS2| DT I DSS1 I DSS2 g fs1 g fs2 |g os1-g os2| |I G1-I G2| CMRR VDG = 20 V, ID = 200 mA TA = 125_C VDG = 10 to 20 V, ID = 200 mA VDG = 20 V, ID = 200 mA VDG = 20 V, ID = 200 mA TA = -55 to 125_C VDS = 20 V, VGS = 0 V 0.85 0.97 25 100 mV mV/_C 1 Transconductance Ratio Differential Output Conductance Differential Gate Current Common Mode Rejection Ratiod VDS = 20 V, ID = 200 m mA S f = 1 kHz 0.85 0.97 0.1 0.1 100 1 mS 10 nA dB Notes a. TA = 25_C unless otherwise noted. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. Pulse test: PW v300 ms duty cycle v3%. d. This parameter not registered with JEDEC. NQP 2 Siliconix P-37995--Rev. A, 11-Aug-94 2N3958 Typical Characteristics Drain Current and Transconductance vs. Gate-Source Cutoff Voltage 5 I DSS - Saturation Drain Current (mA) 3 g fs - Forward Transconductance (mS) 100 nA 10 nA TA = 125_C I G - Gate Leakage 1 nA IGSS @ 125_C 100 pA 200 mA 50 mA IGSS @ 25_C 50 mA Gate Leakage Current IG @ ID = 200 mA 4 gfs 3 IDSS 2.6 2.2 2 1.8 10 pA TA = 25_C 1 pA 0.1 pA 0 10 20 30 1 IDSS @ VDS = 15 V, VGS = 0 V gfs @ VDG = 15 V, VGS = 0 V f = 1 kHz 0 -1 -2 -3 -4 -5 1.4 0 VGS(off) - Gate-Source Cutoff Voltage (V) 1 40 50 VDG - Drain-Gate Voltage (V) 5 Output Characteristics VGS(off) = -2 V 5 Output Characteristics VGS(off) = -3 V VGS = 0 V -0.3 V -0.6 V 4 I D - Drain Current (mA) I D - Drain Current (mA) 4 3 VGS = 0 V -0.2 V 3 -0.9 V 2 -1.2 V -1.5 V 1 -1.8 V -2.1 V 0 -2.4 V 20 2 -0.4 V -0.6 V -0.8 V 1 -1.0 V -1.2 V -1.4 V 16 0 0 4 8 12 20 0 4 8 12 16 VDS - Drain-Source Voltage (V) VDS - Drain-Source Voltage (V) 2 Output Characteristics VGS(off) = -2 V 2.5 Output Characteristics VGS(off) = -3 V VGS = 0 V -0.3 V -0.6 V -0.9 V -1.2 V 1.6 I D - Drain Current (mA) VGS = 0 V -0.4 V 1.2 -0.6 V -0.8 V 0.8 -1.0 V 0.4 -1.2 V -1.4 V 0 0 0.2 0.4 0.6 0.8 VDS - Drain-Source Voltage (V) -1.6 V 1 I D - Drain Current (mA) -0.2 V 2.0 1.5 1.0 -1.5 V -1.8 V 0.5 -2.1 V -2.4 V 0 0.2 0.4 0.6 0.8 1 0 VDS - Drain-Source Voltage (V) Siliconix P-37995--Rev. A, 11-Aug-94 3 2N3958 Typical Characteristics (Cont'd) 5 Transfer Characteristics 100 VGS(off) = -2 V VDS = 20 V (mV) Gate-Source Differential Voltage vs. Drain Current VDG = 20 V TA = 25_C 4 I D - Drain Current (mA) TA = -55_C 25_C 2 3 VGS1 - VGS2 10 1 125_C 0 0 -0.5 -1.0 -1.5 -2.0 -2.5 VGS - Gate-Source Voltage (V) 1 0.01 0.1 ID - Drain Current (mA) 1 100 Voltage Differential with Temperature vs. Drain Current VDG = 20 V DTA = 25 to 125_C DTA = -55 to 25_C 2N5199 CMRR (dB) 130 Common Mode Rejection Ratio vs. Drain Current CMRR = 20 log DVDG D VGS1 - VGS2 ( mV/ _C ) 120 110 DVDG = 10 - 20 V 100 5 - 10 V 90 D VGS1 - VGS2 10 Dt 2N5196 1 0.01 0.1 ID - Drain Current (mA) 1 80 0.01 0.1 ID - Drain Current (mA) 1 100 Circuit Voltage Gain vs. Drain Current rDS(on) - Drain-Source On-Resistance ( W ) 1k On-Resistance vs. Drain Current 80 A V - Voltage Gain 800 60 VGS(off) = -3 V -2 V 600 VGS(off) = -2 V 400 -3 V 200 40 AV + 20 g fs R L 1 ) R Lg os Assume VDD = 15 V, VDS = 5 V R L + 10 V ID 0 0.01 0 0.1 ID - Drain Current (mA) 1 0.01 0.1 ID - Drain Current (mA) 1 4 Siliconix P-37995--Rev. A, 11-Aug-94 2N3958 Typical Characteristics (Cont'd) 10 Common-Source Input Capacitance vs. Gate-Source Voltage C rss - Reverse Feedback Capacitance (pF) f = 1 MHz 5 Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage f = 1 MHz C iss - Input Capacitance (pF) 8 4 6 VDS = 0 V 4 5V 15 V 2 20 V 0 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V) 20 3 VDS = 0 V 5V 2 15 V 1 20 V 0 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V) 2.5 Equivalent Input Noise Voltage vs. Frequency VDS = 20 V Output Conductance vs. Drain Current VGS(off) = -2 V VDS = 20 V f = 1 kHz (nV / Hz) g os - Output Conductance ( mS) 16 ID @ 200 mA 12 2.0 TA = -55_C 1.5 e n - Noise Voltage 8 VGS = 0 V 1.0 25_C 4 0.5 125_C 0 10 100 1k f - Frequency (Hz) 10 k 100 k 0 0.01 0.1 ID - Drain Current (mA) 1 2.5 g fs - Forward Transconductance (mS) Common-Source Forward Transconductance vs. Drain Current VGS(off) = -2 V VDS = 20 V f = 1 kHz rDS(on) - Drain-Source On-Resistance ( W ) 1k On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage 10 g os - Output Conductance ( mS) 2.0 TA = -55_C 1.5 25_C 1.0 800 gos 8 600 6 400 rDS 4 0.5 125_C 0 0.01 0.1 ID - Drain Current (mA) 1 200 rDS @ ID = 100 mA, VGS = 0 V gos @ VDS = 20 V, VGS = 0 V, f = 1 kHz 0 -1 -2 -3 -4 -5 2 0 0 VGS(off) - Gate-Source Cutoff Voltage (V) Siliconix P-37995--Rev. A, 11-Aug-94 5 |
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