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STSA851 STSA851-AP LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA Ordering Code STSA851 STSA851-AP s Marking SA851 SA851 Shipment Bulk Ammopack s s VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN CHARACTERISTIC FAST SWITCHING SPEED EMERGENCY LIGHTING VOLTAGE REGULATORS RELAY DRIVERS HIGH EFFICIENCY LOW VOLTAGE SWITCHING CIRCUITS APPLICATIONS: s s s s TO-92 DESCRIPTION The d e vic e is ma n ufa c tu re d in N PN P la n a r technology by using a "Base Island" layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC ICM IB IBM Ptot Tstg Tj Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) Total Dissipation at Tamb = 25 C Storage Temperature Max. Operating Junction Temperature Value 150 60 7 5 20 1 2 1.1 -65 to 150 150 Unit V V V A A A A W C C August 2002 1/5 STSA851 / STSA851-AP THERMAL DATA Rthj-amb Thermal Resistance Junction-ambient Max 114 C/W ELECTRICAL CHARACTERISTICS (Tj = 25 C unless otherwise specified) Symbol ICBO IEBO V(BR)CBO* Parameter Collector Cut-off Current (IE = 0) Emitter Cut-off Current (IC = 0) Collector-Base Breakdown Voltage (IE = 0) Collector-Emitter Breakdown Voltage (IB = 0) Emitter-Base Breakdown Voltage (IC = 0) Collector-Emitter Saturation Voltage VCB = 120 V VCB = 120 V VEB = 7 V IC = 100 A 150 Test Conditions Tj = 100 C Min. Typ. Max. 50 1 10 Unit nA A nA V V(BR)CEO* IE = 10 mA 60 V V(BR)EBO* IC = 100 A 7 V VCE(sat)* IC = 100 mA IC = 1 A IC = 2 A IC = 5 A IC = 4 A IC = 4 A IC = 10 mA IC = 2 A IC = 5 A IC = 10 A VCB = 10 V IC = 1 A IB1 = -IB2 = 100 mA IB = 5 mA IB = 50 mA IB = 50 mA IB = 200 mA IB = 200 mA VCE = 1 V VCE = 1 VCE = 1 VCE = 1 VCE = 1 V V V V 150 150 90 30 10 70 140 320 1 0.89 300 270 140 50 50 50 120 200 450 1.15 1 mV mV mV mV V V VBE(sat)* VBE(on)* hFE* Base-Emitter Saturation Voltage Base-Emitter On Voltage DC Current Gain 350 CCBO ton ts tf Collector-Base Capacitance RESISTIVE LOAD Turn-On Time Storage Time Fall Time f = 1 MHz VCC = 10 V pF 50 1.35 120 ns s ns * Pulsed: Pulse duration = 300 s, duty cycle = 1.5 %. 2/5 STSA851 / STSA851-AP TO-92 BULK SHIPMENT MECHANICAL DATA mm. DIM. MIN. A b D E e e1 L R S1 W V 4.32 0.36 4.45 3.30 2.41 1.14 12.70 2.16 0.92 0.41 5 TYP. MAX. 4.95 0.51 4.95 3.94 2.67 1.40 15.49 2.41 1.52 0.56 MIN. 0.170 0.014 0.175 0.130 0.095 0.045 0.500 0.085 0.036 0.016 inch TYP. MAX. 0.195 0.020 0.195 0.155 0.105 0.055 0.610 0.095 0.060 0.022 5 3/5 STSA851 / STSA851-AP TO-92 AMMOPACK SHIPMENT (Suffix "-AP") MECHANICAL DATA mm. MIN. TYP. MAX. 4.80 3.80 1.60 2.30 0.48 12.50 5.65 2.44 -2.00 17.50 5.70 8.50 18.50 15.50 3.80 16.00 4.00 18.00 6.00 9.00 12.70 6.35 2.54 12.90 7.05 2.94 2.00 19.00 6.30 9.25 0.50 20.50 16.50 25.00 4.20 0.90 11.00 3.00 -1.00 1.00 0.118 -0.039 0.039 0.150 0.157 0.728 0.610 0.630 0.492 0.222 0.096 -0.079 0.689 0.224 0.335 0.709 0.236 0.354 0.500 0.250 0.100 MIN. inch TYP. MAX. 0.189 0.150 0.063 0.091 0.019 0.508 0.278 0.116 0.079 0.748 0.248 0.364 0.020 0.807 0.650 0.984 0.165 0.035 0.433 DIM. A1 T T1 T2 d P0 P2 F1, F2 delta H W W0 W1 W2 H H0 H1 D0 t L l1 delta P 4/5 STSA851 / STSA851-AP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. (c) http://www.st.com 5/5 |
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