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| (R) STN888 HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR Ordering Code STN888 s Marking N888 s s s s VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE D.C CURRENT GAIN, hFE > 100 5 A CONTINUOUS COLLECTOR CURRENT SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS AVAILABLE IN TAPE AND REEL PACKING 2 1 SOT-223 2 3 APPLICATIONS POWER MANAGEMENT IN PORTABLE EQUIPMENT s VOLTAGE REGULATION IN BIAS SUPPLY CIRCUITS s SWITCHING REGULATOR IN BATTERY CHARGER APPLICATIONS s HEAVY LOAD DRIVER s INTERNAL SCHEMATIC DIAGRAM DESCRIPTION The device is manufactured in low voltage PNP Planar Technology by using a "Base Island" layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage. ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Total Dissipation at T amb = 25 o C Storage Temperature Max. Operating Junction Temperature Value -60 -30 -6 -5 -10 1.6 -65 to 150 150 Unit V V V A A W o o C C March 2003 1/6 STN888 THERMAL DATA R t hj-amb * Thermal Resistance Junction-Ambient Max 78 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I EBO Parameter Collector Cut-off Current (I E = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CB = -30 V V CB = -30 V V EB = -6 V I C = -10 mA -30 T j = 100 o C Min. Typ. Max. -10 -1 -10 Unit nA A nA V V (BR)CEO Collector-Emitter Breakdown Voltage (I B = 0) V (BR)CBO Collector-Base Breakdown Voltage (I E = 0) Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage I C = -100 A -60 V V (BR)EBO I E = -100 A -6 V V CE(sat) IC IC IC IC IC IC = = = = = = -500 mA -2 A -5 A -6 A -8 A -10 A I B = -5 mA I B = -50 mA I B = -250 mA I B = -250 mA I B = -400 mA I B = -500 mA I B = -50 mA I B = -250 mA V CE = -1 V V CE = -1 V V CE = -1 V V CE = -1V V CE = -1 V V CE = -1 V 150 150 75 75 40 15 200 200 100 100 55 35 180 160 250 80 -0.15 -0.25 -0.70 -0.70 -1 -1.5 -1.1 -1.4 300 V V V V V V V V V BE(sat) h FE Base-Emitter Saturation Voltage DC Current Gain I C = -2 A I C = -6 A IC IC IC IC Tj IC IC = = = = = = = -10 mA -500 mA -5 A -5 A 100 o C -8 A -10 A td tr ts tf RESISTIVE LOAD Delay Time RiseTime StorageTime Fall Time I C = -3 A I B1 = - I B2 = -60 mA V CC = -20 V (see figure 1) 220 210 300 100 ns ns ns ns Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 2/6 STN888 DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Switching Times Resistive Load Switching Times Resistive Load 3/6 STN888 Figure 1: Resistive Load Switching Test Circuits. 1) Fast electronic switch 2) Non-inductive Resistor 4/6 STN888 SOT-223 MECHANICAL DATA mm MIN. A B B1 c D e e1 E H V A1 0.02 3.30 6.70 0.60 2.90 0.24 6.30 0.70 3.00 0.26 6.50 2.30 4.60 3.50 7.00 3.70 7.30 10o 0.130 0.264 TYP. MAX. 1.80 0.80 3.10 0.32 6.70 0.024 0.114 0.009 0.248 0.027 0.118 0.010 0.256 0.090 0.181 0.138 0.276 0.146 0.287 10o MIN. inch TYP. MAX. 0.071 0.031 0.122 0.013 0.264 DIM. P008B 5/6 STN888 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6 |
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