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 AVD075F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI AVD075F is designed for applications requiring Class C, High Peak Power and low duty cycle such as IFF, DME and TACAN
PACKAGE STYLE .250 2L FLG (B)
A .100 X 45 OD .088 x 45 CHAMFER
C B
FEATURES:
* Internal Input Matching Network * PG = 7.5 dB at 75 W/1150 MHz * OmnigoldTM Metalization System
H
E F G
I
J
K
DIM A
MINIMUM
inches / mm
MAXIMUM
inches / mm
.095 / 2.41 1.050 / 26.67 .245 / 6.22 .120 / 3.05 .552 / 14.02 .790 / 20.07
.105 / 2.67
MAXIMUM RATINGS
IC VCB PDISS TJ TSTG JC 5.5 A PEAK 65 V 220 W
PEAK
B C D E F G H I J K
.255 / 6.48 .140 / 3.56 .572 / 14.53 .810 / 20.57 .285 / 7.24
.003 / 0.08 .052 / 1.32 .120 / 3.05
.007 / 0.18 .072 / 1.83 .130 / 3.30 .210 / 5.33
-65 C to +200 C -65 C to +150 C 0.8 C/W
ORDER CODE: ASI10560
CHARACTERISTICS
SYMBOL
BVCBO BVCER BVEBO ICES hFE PG C IC = 10 mA IC = 10 mA IE = 1.0 mA VCE = 50 V VCE = 5.0 V
TC = 25 C
NONETEST CONDITIONS
RBE = 10
MINIMUM TYPICAL MAXIMUM
65 65 3.5 5.0
UNITS
V V V mA --dB %
IC = 500 mA f = 1025 - 1150 MHz
11 7.5 35
200
POUT = 75 W VCC = 50 V PIN = 13.5 W
NOTE: Pulse Width = 10 S
Duty Cycle = 1 %
REV. C
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004
Specifications are subject to change without notice.
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