Part Number Hot Search : 
NCE1512I 10481 BAO40 1N5243 1N450010 15SQ040 SL6654 MAX9273
Product Description
Full Text Search
 

To Download AWT6201REV05 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 AWT6201
GSM850/GSM900/DCS/PCS Quad Band PowerPlexerTM with Integrated Power Control
FEATURES
* * * * * * * * * * * *
ANADIGICS developed technologies (InGaP HBT/pHEMT/IPP) Proven high volume low cost laminate/ overmold technology Integrated Power Control (CMOS) Integrated PA/SW/LPF High Gain InGaP HBT PAs Low loss receive paths High isolation switch (TX to RX, RX on/off) Fully compliant GSM harmonic performance ESD protected antenna port (12kV) Small footprint (10.5mm x 11.0mm x 1.55mm) GPRS capable (class 12) Power control range >50dB
Advanced Product Information - Rev 0.5
The module requires only the most basic RF decoupling, all the RF ports are 50W, and interfaces directly with the baseband power control DAC and supports both 1.8V and 2.7V logic. The solution includes integrated power control, two dual band power amplifiers to support GSM850/900/DCS/PCS, harmonic filtering and RX/TX switching. The power amplifiers support class 12 GPRS, 4 TX slots at 50% duty cycle, using three stage InGaP HBT PAs. The pHEMT switches support 4 RX ports to interface with external RX SAW filters and the filtering is achieved using integrated passives technology. The integrated power control scheme reduces the number of external components associated with a power control function, and facilitates fast and easy production calibration. The power control range is typically 55dB.
APPLICATIONS
* *
Quad band handsets and PDAs Configurable for Tri Band/UMTS handsets
PRODUCT DESCRIPTION
The AWT6201 is the second generation GSM PowerPlexerTM. It has been developed to minimize time to market for GSM handset/PDA designers.
DCS/PCS
DCS/PCS_IN
PCS_RX
DCS_RX
VRAMP CNT_1 CNT_2 CNT_3 VREG VBATT
Logic/Power Controller
ANT
GSM_IN GSM900_RX
GSM850/900
GSM850_RX
Figure 1: Functional Block Diagram
06/2003
AWT6201
ELECTRICAL CHARACTERISTICS
Table 1: Absolute Minimum and Maximum Ratings
PAR AMETER Supply Voltage (VC C ) Input Power (RFIN) Power C ontrol Voltage (VRAMP) Storage Temperature (TSTG) Maxi mum Reflow Temperature -55 MIN MAX +7 +11 1.8 150 240 U N IT V dB m V C C
Exceeding the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operations sections of this data sheet. Exposure to maximum ratings for extended periods can adversely affect device reliability.
Table 2: ESD Ratings
PAR AMETER ESD Threshold Voltage (Antenna Port) ESD Threshold Voltage (C ontrol Inputs) ESD Threshold Voltage (RF Inputs) ESD Threshold Voltage (RX Ports) METH OD HB M HB M HB M HB M R ATIN G 12 2.5 250 400 U N IT kV kV V V
Although protection circuitry has been designed into this device, proper precautions should be taken to avoid exposure to electrostatic discharge (ESD) during handling and mounting. Human body model HBM employed is resistance = 1500W, capacitance = 100pF.
Test Conditions: VCC = 3.0 to 4.8V, TC = 25 3C
Table 3: Logic Level Definitions
MIN 1.5 0
S IGN AL Logi c Hi gh Logi c Low Input bi as current
TYP
MAX 3 0.5 10
U N IT V V
mA
2
ADVANCED PRODUCT INFORMATION - Rev 0.5 06/2003
AWT6201 Table 4: Operating Conditions and Supply Currents
PAR AMETER Supply Voltage (VBATT) Regulated Voltage (VREG) Regulated C urrent (IREG) Regulated C urrent (IREG) Power D own C urrent (VBATT = 4.8V) RX C urrent (VBATT = 4.8V) C ontrol Voltage (VRAMP) C ontol Voltage for mi ni mum POUT(VRAMP_MIN) VRAMP i nput capaci tance GSM850/900 module effi ci ency (VRAMP = 1.6V, VBATT = 3.5V, PIN = 2dBm) D C S/PC S module effi ci ency (VRAMP = 1.6V, VBATT = 3.5V, PIN = 2dBm) C ase Temperature (TC) D uty C ycle -20 0 0 0.2 0.2 15 38 32 85 50 MIN 3.0 2.7 TYP 3.5 2.85 7 10 MAX 4.8 3.0 8 30 10 30 1.6 0.25 20 U N IT V V mA TX mode enabled RX mode enabled C OMMEN TS
mA mA mA
V V pF % % C %
(PA+Swi tch+Fi lter) (PA+Swi tch+Fi lter)
Parametric performance is guaranteed under specified operating conditions. Test Conditions: Mode = RX (see control table), VBATT = 3.5V, ZIN = ZOUT = 50W, TC = 25 3C
Table 5: Receiver Specification
PAR AMETER GSM850/900 Inserti on loss
MIN
TYP 1.3
MAX 1.5 1.7
U N IT dB
C omments FIN = 869 to 960MHz FIN = 869 to 960MHz, VBATT = 3.0 to 4.8V, TC = -20 to +85C
D C S/PC S Inserti on loss 15 15 25 25
1.3
1.5 1.7
dB
FIN = 1805 to 1990MHz FIN = 1805 to 1990MHz , VBATT = 3.0 to 4.8V, TC = -20 to +85C
Recei ver Return loss
dB dB dB dB 6 3 8 5 dB m dB m
FIN = 869 to 960MHz FIN = 1805 to 1990MHz FIN = 869 to 960MHz FIN = 1805 to 1990MHz FIN = 915MHz, POUT = 33.2dBm FIN = 1910MHz, POUT = 30.4dBm
Recei ver Isolati on
TX Power at RX ports
ADVANCED PRODUCT INFORMATION - Rev 0.5 06/2003
3
AWT6201 Table 6: GSM850/900 Electrical Specification
Test Conditions: Mode = TX_GSM_EN, VBATT = 3.5V, ZIN = ZOUT = 50W, TC = 25 3C, PIN = 2dBm, PWIDTH = 1154ms, Duty Cycle = 25%
PAR AME TE R Frequency (FIN) Input P ower (P IN) Output P ower (P OUT) D egraded Output P ower Forward Isolati on (1)
MIN 824 880 0 33.2 30.7
TYP
MAX 849 915
U N ITS MHz MHz dB m dB m dB m
C OMME N TS
2 33.8 31.7
4
V RAMP = 1.6V V BATT = 3.0 V, V RAMP = 1.6V, P IN = 0dB m, TC = 85C P IN = 4dB m, V BATT = 3 to 4.8V Mode = RX _GS M900_E N or RX _GS M850_E N, see control table V RAMP = 0.2V, P IN = 4dB m, V BATT = 3 to 4.8V Mode = TX _GS M_E N, see control table V BATT = 3 to 4.8V, P OUT = 5 to 33.2dB m V S WR =10:1 A ll angles V BATT = 3 to 4.8V, P OUT = 5 to 33.2dB m, TC = -20 to 85 C P IN = 4dB m, V BATT = 4.8V, P OUT = 5 to 33.2dB m, A ll phases of load
-55
-51
dB m
Forward Isolati on (2)
-25
-10
dB m
Harmoni c 2nd * 3fO to 12.75 GHz Stabi li ty: < 1GHz > 1GHz
-38 -37
-34 -33 -36 -30 10:1 V S WR
dB m dB m dB m dB m
Ruggedness
-88
-84
dB m
FIN = 849MHz FOUT = 869 to 894MHz RB W = V B W = 100kHz, P OUT = 5 to 33.2dB m FIN = 915MHz FOUT = 925 to 935MHz RB W = V B W = 100kHz, P OUT = 5 to 33.2dB m FIN = 915MHz FOUT = 935 to 960MHz RB W = V B W = 100kHz, P OUT = 5 to 33.2dB m A ll power levels
RX B and Noi se
-81
-78
dB m
-89
-86
dB m
Input V S WR
2.5:1
*Limit using an unmodulated carrier. There is a 5dB enhancement using GMSK signal ( RBW = VBW = 100kHz)
4
ADVANCED PRODUCT INFORMATION - Rev 0.5 06/2003
AWT6201 Table 7: DCS/PCS Electrical Specification
Test Conditions: Mode = TX_DCS_PCS_EN, VBATT = 3.5V, ZIN = ZOUT = 50W, TC = 25 3C, PIN = 2dBm, PWIDTH = 1154ms, Duty Cycle = 25%
PAR AMETER Frequency (FIN) Input Power (PIN) Output Power D C S/PC S (POUT) D egraded Output Power
MIN 1710 1850 0 30.5 27.7
TYP
MAX 1785 1910
U N ITS MHz MHz dB m dB m dB m
C OMMEN TS
2 31.5 28.7
4
VRAMP = 1.6V VBATT = 3.0V, VRAMP = 1.6V, PIN = 0dBm, TC = 85C PIN = 4dBm, VBATT = 3 to 4.8V Mode = RX_D C S_EN or RX_PC S_EN / UMTS, see control table VRAMP = 0.2V, PIN = 4dBm, VBATT = 3 to 4.8V Mode = TX_D C S_PC S_EN, see control table VBATT = 3 to 4.8V, POUT = 0 to 30.4dBm VSWR =10:1 All angles VBATT = 3 to 4.8V, POUT = 0 to 30.4dBm, TC = -20 to 85 C PIN = 2dBm, VBATT = 4.8V, POUT = 0 to 30.4dBm, All phases of load FIN = 1785 or 1910MHz, FOUT = 1805 to 1880MHz, or 1930 to 1990MHz POUT = 0 to 30.4dBm, RBW = VBW = 100kHz All power levels
Forward Isolati on
-55
-51
dB m
Forward Isolati on (2) Harmoni cs 2fo to 12.75 GHz Stabi li ty: < 1GHz > 1GHz Ruggedness:
-25
-10
dB m
-37
-33 -36 -30 10:1 VSWR
dB m dB m dB m
RX Band Noi se
-88
-84
dB m
Input VSWR
2.5:1
ADVANCED PRODUCT INFORMATION - Rev 0.5 06/2003
5
AWT6201 Table 8: Logic Control Table
MOD E SHUTD OWN C N TL 1 0 C N TL 2 0 C N TL 3 0 D escription Low current state where module i s di sabled. Thi s mode enables a low loss paths from the antenna to GSM850_RX port, and from antenna to PC S_RX port. PA's are di sabled and swi tch i s i n RX mode. Thi s mode enables a low loss path from the antenna to GSM900_RX port. PA's are di sabled and swi tch i s i n RX mode. Thi s mode enables a low loss path from the antenna to D C S_RX port. PA's are di sabled and swi tch i s i n RX mode. Thi s mode enables low loss paths from the antenna to GSM850_RX port, and from antenna to PC S_RX port. PA's are di sabled and swi tch i s i n RX mode. Swi tch i s i n transmi t mode and GSM850/900PA i s enabled. Swi tch i s i n transmi t mode and D C S/PC S PA i s enabled.
RX_GSM850_EN
0
0
1
RX_GSM900_EN
0
1
0
RX_D C S_EN
0
1
1
RX_PC S_EN
0
0
1
TX_GSM_EN TX_D C S_PC S_EN
1 1
0 1
1 0
Table 9: Control Timing
PAR AME T E R Swi tchi ng delay from RX to TX Mode Swi tchi ng delay from RX to TX Mode MIN T YP 2 2 M AX U N IT S C OMME N T S
ms ms ms
Ti me for power at antenna to ri se from -10dBm to maxi mum output power. Ti me for power to fall from maxi mum output power to 10dBm.
POUT ri se ti me
2
POUT fall ti me
2
ms
6
ADVANCED PRODUCT INFORMATION - Rev 0.5 06/2003
AWT6201 Figure 2: Pinout (X-Ray View)
1 2 40 39 38 37 36 35 34 33 32 31 30
3 4 5
29 28 27 26 25 24 23 22 21
6 7 8 9 10 11
Note: unassigned pins are ground pads
12
13
14
15
16
17
18
19
20
Table 10: Pinout Description
PIN
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
N AME
D C S/PC S_IN GND C NTL1 C NTL2 C NTL3 VBATT VREG VRAMP GND GND GSM_IN GND GND GND GND GND GND GND GND GSM850_RX Ground
FU N C TION
D C S/PC S RF Input
PIN
21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40
N AME
GND GSM900_RX GND GND GND GND ANT GND GND D C S_RX GND PC S_RX GND GND GND GND GND GND GND GND Ground
FU N C TION
GSM900 recei ve port Ground Ground Ground Ground Antenna port Ground Ground D C S recei ve port Ground PC S recei ve port Ground Ground Ground Ground Ground Ground Ground Ground
C ontrol logi c i nput C ontrol logi c i nput C ontrol logi c i nput Battery supply connecti on Regulated supply connecti on Analog i nput for power control Ground Ground GSM850/900 RF Input Ground Ground Ground Ground Ground Ground Ground Ground GSM850 recei ve port
ADVANCED PRODUCT INFORMATION - Rev 0.5 06/2003
7
AWT6201
PACKAGE OUTLINE DRAWING
8
ADVANCED PRODUCT INFORMATION - Rev 0.5 06/2003
AWT6201
PACKAGE OUTLINE DRAWING
2 2 5 6
1
1
1
1
4
1 9 10 3 3 7 8 1 1
4
2 2
1
1
1
1
2 2
ADVANCED PRODUCT INFORMATION - Rev 0.5 06/2003
9
AWT6201
NOTES
10
ADVANCED PRODUCT INFORMATION - Rev 0.5 06/2003
AWT6201
NOTES
ADVANCED PRODUCT INFORMATION - Rev 0.5 06/2003
11
AWT6201
ORDERING INFORMATION
OR D ER N U MB ER AWT6201 TEMPER ATU R E R AN GE PAC K AGE D ESC R IPTION C OMPON EN T PAC K AGIN G
ANADIGICS, Inc.
141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com E-mail: Mktg@anadigics.com IMPORTANT NOTICE
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a products formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders.
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited.
WARNING
12
ADVANCED PRODUCT INFORMATION - Rev 0.5 06/2003


▲Up To Search▲   

 
Price & Availability of AWT6201REV05

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X