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| DISCRETE SEMICONDUCTORS M3D124 BFU510 NPN SiGe wideband transistor Preliminary specification 2001 Nov 08 Philips Semiconductors Preliminary specification NPN SiGe wideband transistor FEATURES * Very high power gain * Very low noise figure * High transition frequency * Emitter is thermal lead * Low feedback capacitance * 45 GHz SiGe process. APPLICATIONS * RF front end * Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.) * Radar detectors * Pagers * Satellite television tuners (SATV) * High frequency oscillators. Marking code: A5 handbook, halfpage BFU510 PINNING PIN 1 2 3 4 emitter base emitter collector DESCRIPTION 3 4 2 Top view 1 MSB842 DESCRIPTION NPN SiGe wideband transistor for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. Fig.1 Simplified outline SOT343R. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE Gmax NF PARAMETER collector-base voltage collector current (DC) total power dissipation DC current gain maximum power gain noise figure Ts 115 C IC = 10 mA; VCE = 2 V; Tj = 25 C IC = 0.5 mA; VCE = 2 V; f = 2 GHz; S = opt CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. open emitter collector-emitter voltage open base CONDITIONS MIN. - - - - 70 - TYP. - - 10 - 140 23 1.0 MAX. 9 2.3 15 35 210 - - dB dB UNIT V V mA mW IC = 10 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C - 2001 Nov 08 2 Philips Semiconductors Preliminary specification NPN SiGe wideband transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the emitter pins. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point VALUE 1000 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature operating junction temperature Ts 115 C; note 1; see Fig.2 open base open collector CONDITIONS open emitter - - - - - -65 - MIN. 9 2.3 2.5 15 35 +150 150 BFU510 MAX. V V V UNIT mA mW C C UNIT K/W CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE Cc Cre Gmax NF PL1 ITO Notes 1. Gmax is the maximum power gain, if K > 1. If K < 1 then Gmax = MSG. 2. ZS and ZL are optimized for gain. 2001 Nov 08 3 PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector-base leakage current DC current gain collector capacitance feedback capacitance maximum power gain; note 1 noise figure output power at 1 dB gain compression third order intercept point CONDITIONS IC = 2.5 A; IE = 0 IC = 1 mA; IB = 0 IE = 2.5 A; IC = 0 IE = 0; VCB = 4.5 V IC = 10 mA; VCE = 2 V IE = ie = 0; VCB = 2 V; f = 1 MHz IC = 0; VCB = 2 V; f = 1 MHz IC = 10 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C IC = 0.5 mA; VCE = 2 V; f = 2 GHz; S = opt Ic = 5 mA; VCE = 2 V; f = 2 GHz; ZS = ZS opt; ZL = ZL opt; note 2 Ic = 10 mA; VCE = 2 V; f = 2 GHz; ZS = ZS opt; ZL = ZL opt; note 2 MIN. 9 2.3 2.5 - 70 - - - - - - TYP. - - - - 140 150 25 23 1.0 2 7 MAX. - - - 15 210 - - - - - - fF fF dB dB dBm dBm UNIT V V V nA Philips Semiconductors Preliminary specification NPN SiGe wideband transistor BFU510 60 Ptot (mW) 250 hFE 200 40 150 100 20 50 0 0 40 80 120 160 TS (C) 0 0 5 10 IC (mA) VCE = 2 V; Tj = 25 C. 15 Fig.2 Power derating curve. Fig.3 DC current gain as a function of collector current; typical values. 15 IC (mA) IB=180A 160A 140A 120A 40 fT (GHz) 30 10 100 80A 60A 40A 20 5 20A 10 0 0 1 2 VCE (V) 3 0 1 IC (mA) VCB = 1 V; f = 2 GHz; Tamb = 25 C 10 Fig.4 Output characteristics; typical values. Fig.5 Transition frequency as a function of collector current; typical values. 2001 Nov 08 4 Philips Semiconductors Preliminary specification NPN SiGe wideband transistor BFU510 40 gain (dB) 30 MSG 50 Cre (fF) 40 30 20 S21 Gmax 20 10 10 0 100 0 1000 10000 f (MHz) 0 0.5 1 1.5 VCB (V) I C = 0; f = 1 MHz; Tamb = 25 C. 2 I C = 10 mA; VCE = 2 V; Tamb = 25 C. Fig.6 Gain as a function of frequency; typical values. Fig.7 Feedback capacitance as a function of collector-base voltage; typical values 10 ITO (dBm) 8 6 4 4 PL 1 dB (dBm)3 2 1 0 2 -1 0 -2 -4 1 10 IC (mA) -2 -3 -4 1 IC (mA) 10 VCE = 2 V; f = 2 GHz VCE = 2 V; f = 2 GHz; source and load tuned for optimum gain. Fig.8 Third order intercept point as a function of collector current 5 Fig.9 PL 1 dB as a function of collector current 2001 Nov 08 Philips Semiconductors Preliminary specification NPN SiGe wideband transistor BFU510 90 +1 135 +0.5 10 GHz +2 10 GHz +0.2 +5 0.2 180 0 0.2 0.5 1 5 GHz 2 5 10 mA 2.5 GHz -0.2 5 GHz 2.5 GHz -2 -1 -90 -45 1 GHz 1 GHz-5 0 1 mA 0 45 1.0 0.8 0.6 0.4 -135 -0.5 1.0 IC = 1 mA and 10 mA; VCE = 2 V; Zo = 50 . Fig.10 Common emitter input reflection coefficient (S11). 90 135 45 1 GHz 10 mA 180 10 8 6 1 GHz 4 1mA 10 GHz 2 0 -135 -45 I C = 1 mA and 10 mA; VCE = 2 V; Zo = 50 . -90 Fig.11 Common emitter forward transmission coefficient (S21). 2001 Nov 08 6 Philips Semiconductors Preliminary specification NPN SiGe wideband transistor BFU510 90 135 45 1GHz 10 mA 0 1 mA 10GHz 180 0.25 0.20 0.15 0.1 0.05 -135 -45 I C = 1 mA and 10 mA; VCE = 2 V; Zo = 50 . -90 Fig.12 Common emitter reverse transmission coefficient (S12). 90 +1 135 +0.5 45 +2 1.0 0.8 0.6 +0.2 +5 10GHz 0 180 0.2 10GHz 0.5 1 2 5 1GHz 10 mA -0.2 5GHz 1 mA 5GHz -135 -0.5 -1 -2 -45 2.5GHz -5 2.5GHz 0 1GHz 0.2 0 0.4 1.0 I C = 1 mA and 10 mA; VCE = 2 V; Zo = 50 . -90 Fig.13 Common emitter output reflection coefficient (S22). 2001 Nov 08 7 Philips Semiconductors Preliminary specification NPN SiGe wideband transistor BFU510 5 NFmin (dB) 4 f=5GHz 3 NFmin (dB) 2 3 2 f=2GHz 1 1 0 0 2 4 6 8 IC (mA) VCE = 2 V; Tamb = 25 C. 0 10 0 1 2 3 4 5 6 f (GHz) I C = 0.5 mA; VCE = 2 V; Tamb = 25 C. Fig.14 Minimum noise figure as a function of collector current. Fig.15 Minimum noise figure as a function of frequency. Noise data: VCE = 2 V; IC = 1 mA; Tamb = 25 C; typical values f (GHz) 2 3 4 5 6 7 8 9 10 11 12 Fmin (dB) 1.2 1.5 1.9 2.2 2.5 2.7 3.0 3.2 3.3 3.4 3.5 opt (mag) 0.79 0.72 0.60 0.55 0.43 0.30 0.27 0.27 0.33 0.43 0.46 (deg) 36.5 57.9 81.2 103.7 133.7 168.3 -152.7 -103.2 -62.8 -38.5 -16.0 rn () 1.07 0.84 0.60 0.36 0.22 0.18 0.23 0.42 0.71 0.96 1.25 2001 Nov 08 8 Philips Semiconductors Preliminary specification NPN SiGe wideband transistor SPICE parameters for the BFU510 die SEQUENCE No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 (1) 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 Notes 1. Not used. 2001 Nov 08 9 PARAMETER IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RB IRB RBM RE RC XTB EG XTI CJE VJE MJE TF XTF VTF ITF PTF CJC VJC MJC XCJC TR CJS VJS MJS FC VALUE 0.277 270 1.06077 45 11.1 265 2.9 50 1.01 0.001 0.4 1.21 21 - 30 4.36 20.5 -2.2 1.014 3 54.3 877 0.202 2.8 0.9 0.026 0.9 30 30 577 0.239 0.44 20 8.84 500 0.6447 0.7 - - V mA fA - - - E Cbe2 Le Rcs BFU510 UNIT aA B Lb B' C' Lc C Cbe E' Ccs Cce 1000000 V A fA - - m - eV - fF mV - ps - V A deg fF mV - - ns fF mV - - Lb Lc Le Cbe1 Cbe2 Cce Ccs Rcs Fig.16 Package equivalent circuit SOT343R2. List of components (see fig 16) DESIGNATION VALUE 0.90 1.02 0.33 133 65 66 100 170 nH nH nH fF fF fF fF Ohm UNIT Philips Semiconductors Preliminary specification NPN SiGe wideband transistor PACKAGE OUTLINE Plastic surface mounted package; reverse pinning; 4 leads BFU510 SOT343R D B E A X y HE e vMA 3 4 Q A A1 c 2 wM B bp e1 b1 1 Lp detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 b1 0.7 0.5 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 1.15 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2 y 0.1 OUTLINE VERSION SOT343R REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-05-21 2001 Nov 08 10 Philips Semiconductors Preliminary specification NPN SiGe wideband transistor DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development DEFINITIONS BFU510 This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Preliminary data Qualification Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2001 Nov 08 11 Philips Semiconductors - a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. (c) Koninklijke Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. SCA73 The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 125104/00/04/pp12 Date of release: 2001 Nov 08 Document order number: 9397 750 09131 |
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