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| Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Silicon PIN Photodiode with Daylight Filter BPW 34 FAS Chip position 0...0.1 1.2 1.1 0.3 1.1 0.9 0.2 0.1 4.0 3.7 1.7 1.5 0...5 6.7 6.2 4.5 4.3 1.8 0.2 0.9 0.7 Photosensitive area 2.65 mm x 2.65 mm Cathode lead GEO06863 Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified Wesentliche Merkmale q Speziell geeignet fur den Wellenlangenbereich von 830 nm bis 880 nm q Kurze Schaltzeit (typ. 20 ns) q geeignet fur Vapor-Phase Loten und IRReflow-Loten Anwendungen q IR-Fernsteuerung von Fernseh- und Features q Especially suitable for the wavelength range of 830 nm to 880 nm q Short switching time (typ. 20 ns) q Suitable for vapor-phase and IR-reflow soldering Application q IR-remote control of hi-fi and TV sets, video tape recorders, remote controls of various equipment q Photointerrupters Rundfunkgeraten, Videorecordern, Geratefernsteuerung q Lichtschranken fur Gleich- und Wechsellichtbetrieb Typ Type BPW 34 FAS Bestellnummer Ordering Code Q62702-P463 Semiconductor Group 1 1997-11-19 feo06861 BPW 34 FAS Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Verlustleistung, TA = 25 C Total power dissipation Symbol Symbol Top; Tstg VR Ptot Wert Value - 40 ... + 85 32 150 Einheit Unit C V mW Kennwerte (TA = 25 C, = 870 nm) Characteristics Bezeichnung Description Fotoempfindlichkeit Spectral sensitivity VR = 5 V, Ee = 1 mW/cm2 Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax Bestrahlungsempfindliche Flache Radiant sensitive area Abmessung der bestrahlungsempfindlichen Flache Dimensions of radiant sensitive area Abstand Chipoberflache zu Gehauseoberflache Distance chip front to case surface Halbwinkel Half angle Dunkelstrom, VR = 10 V Dark current Spektrale Fotoempfindlichkeit Spectral sensitivity Symbol Symbol S Wert Value 50 ( 40) Einheit Unit A S max 880 740 ... 1100 nm nm A LxB LxW H 7.00 2.65 x 2.65 mm2 mm 0.3 mm IR S 60 2 ( 30) 0.65 Grad deg. nA A/W Semiconductor Group 2 1997-11-19 BPW 34 FAS Kennwerte (TA = 25 C, = 870 nm) Characteristics Bezeichnung Description Quantenausbeute Quantum yield Leerlaufspannung, Ee = 0.5 mW/cm2 Open-circuit voltage Kurzschlustrom, Ee = 0.5 mW/cm2 Short-circuit current Anstiegs und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL= 50 ; VR = 5 V; = 850 nm; Ip = 800 A Durchlaspannung, IF = 100 mA, E = 0 Forward voltage Kapazitat, VR = 0 V, f = 1 MHz, E = 0 Capacitance Temperaturkoeffizient von VO Temperature coefficient of VO Temperaturkoeffizient von ISC Temperature coefficient of ISC Rauschaquivalente Strahlungsleistung Noise equivalent power VR = 10 V Nachweisgrenze, VR = 10 V, Detection limit Symbol Symbol VO ISC tr, tf Wert Value 0.93 320 ( 250) 23 20 Einheit Unit Electrons Photon mV A ns VF C0 TCV TCI NEP 1.3 72 - 2.6 0.03 3.9 x 10- 14 V pF mV/K %/K W Hz cm * Hz W D* 6.8 x 1012 Semiconductor Group 3 1997-11-19 BPW 34 FAS Relative spectral sensitivity Srel = f () 100 OHF01430 Photocurrent IP = f (Ee), VR = 5 V Open-circuit-voltage VO = f (Ee) 10 3 OHF01428 Total power dissipation Ptot = f (TA) 10 4 mV 160 mW Ptot 140 120 100 10 2 80 60 10 1 40 20 OHF00958 Srel % 80 70 60 50 40 30 20 10 0 400 600 800 1000 nm 1200 P A VO 10 3 10 2 VO 10 1 P 10 0 10 -1 10 0 10 1 10 2 W/cm 2 Ee 10 0 10 4 0 0 20 40 60 80 C 100 TA Dark current IR = f (VR), E = 0 4000 OHF00080 Capacitance C = f (VR), f = 1 MHz, E = 0 100 OHF00081 Dark current IR = f (TA), VR = 10 V, E = 0 10 3 OHF00082 R pA C pF 80 R nA 10 2 3000 70 60 2000 50 40 30 10 1 1000 20 10 0 0 5 10 15 V VR 20 10 0 0 -2 10 10 -1 10 0 10 1 V 10 2 10 -1 0 20 40 60 VR 80 C 100 TA Directional characteristics Srel = f () 40 30 20 10 0 1.0 OHF01402 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 Semiconductor Group 4 1997-11-19 |
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