View BS270_976457.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

April 1995
BS270 N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Features
400mA, 60V. RDS(ON) = 2 @ VGS = 10V. High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability.
________________________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol VDSS VDGR VGSS Parameter Drain-Source Voltage
T A = 25C unless otherwise noted
BS270 60 60
Units V V V
Drain-Gate Voltage (RGS < 1M) Gate-Source Voltage - Continuous - Non Repetitive (tp < 50s)
20 40
400 2000 625 5 -55 to 150 300
ID PD TJ,TSTG TL
Drain Current - Continuous - Pulsed Maximum Power Dissipation Derate Above 25C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds
mA
mW mW/C C C
THERMAL CHARACTERISTICS RJA Thermal Resistacne, Junction-to-Ambient 200 C/W
(c) 1997 Fairchild Semiconductor Corporation
BS270.SAM
Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSF VGS(th) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = 10 A VDS = 60 V, VGS = 0 V TJ = 125oC Gate - Body Leakage, Forward Gate - Body Leakage, Reverse VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 500 mA TJ = 125oC VGS = 4.5 V, ID = 75 mA VDS(ON) ID(ON) gFS Ciss Coss Crss ton toff IS ISM VSD Drain-Source On-Voltage VGS = 10 V, ID = 500 mA VGS = 4.5 V, ID = 75 mA On-State Drain Current VGS = 10 V, VDS > 2 VDS(on) VGS = 4.5 V, VDS > 2 VDS(on) Forward Transconductance VDS > 2 VDS(on), ID = 200 mA VDS = 25 V, VGS = 0 V, f = 1.0 MHz DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance 20 11 4 50 25 5 pF pF pF 2000 400 100 1 2.1 1.2 2 1.8 0.6 0.14 2700 600 320 mS 60 1 500 10 -10 V A A nA nA
ON CHARACTERISTICS (Note 1) Gate Threshold Voltage Static Drain-Source On-Resistance 2.5 2 3.5 3 1 0.225 mA V V
SWITCHING CHARACTERISTICS (Note 1) Turn-On Time Turn-Off Time VDD = 30 V, ID = 500 m A, VGS = 10 V, RGEN = 25 10 10 ns ns
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 400 mA (Note 1) 0.88 400 2000 1.2 mA mA V
Note: 1. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%.
BS270.SAM
Typical Electrical Characteristics
2
3
VGS = 10V
, DRAIN-SOURCE CURRENT (A) 1.5
9.0
8.0
DRAIN-SOURCE ON-RESISTANCE
V GS =4.0V
4.5 5.0 6 .0
7.0 6.0
1 RDS(on) , NORMALIZED
2.5
2
7.0
1.5
5.0
0.5
8.0 9.0 10
4.0 3.0
0 1 2 3 V DS , DRAIN-SOURCE VOLTAGE (V) 4 5
1
I 0
D
0.5 0 0.4 0.8 1.2 I D , DRAIN CURRENT (A) 1.6 2
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Gate Voltage and Drain Current.
2
3
V G S = 10V
DRAIN-SOURCE ON-RESISTANCE DRAIN-SOURCE ON-RESISTANCE 1.75
V GS = 10V
2.5
ID = 500mA
R DS(on) , NORMALIZED
R DS(ON) , NORMALIZED
1.5
2
TJ = 125C
1.25
1.5
25C
1
1
-55C
0.5
0.75
0.5 -50
-25
0 25 50 75 100 T , JUNCTION TEMPERATURE (C) J
125
150
0 0 0.4 0.8 1.2 I D , DRAIN CURRENT (A) 1.6 2
Figure 3. On-Resistance Variation with Temperature.
Figure 4. On-Resistance Variation with Drain Current and Temperature.
2 GATE-SOURCE THRESHOLD VOLTAGE
1.1
VDS = 10V
1.6 ID , DRAIN CURRENT (A)
T J = -55C
25C
125C
Vth , NORMALIZED
1.05
V DS = VGS I D = 1 mA
1
1.2
0.95
0.8
0.9
0.4
0.85
0 0 2 V
GS
4 6 8 , GATE TO SOURCE VOLTAGE (V)
10
0.8 -50
-25
0 25 50 75 100 TJ , JUNCTION TEMPERATURE (C)
125
150
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation with Temperature.
BS270.SAM
Typical Electrical Characteristics (continued)
1.1 DRAIN-SOURCE BREAKDOWN VOLTAGE
2
ID = 10A
1.075 1.05 1.025 1 0.975 0.95 0.925 -50 IS , REVERSE DRAIN CURRENT (A)
1 0.5
V GS = 0V
, NORMALIZED
TJ = 125C
0.1 0.05
25C -55C
BV
DSS
0.01 0.005
-25
0 25 50 75 100 TJ , JUNCTION TEMPERATURE (C)
125
150
0.001 0.2
0.4 V SD
0.6
0.8
1
1.2
1.4
, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Breakdown Voltage Variation with Temperature.
Figure 8. Body Diode Forward Voltage Variation with Current and Temperature.
60 40 V GS , GATE-SOURCE VOLTAGE (V)
10
C iss
20 CAPACITANCE (pF)
ID = 5 0 0 m A
8
V DS = 25V
C oss
10
6
5
C rss f = 1 MHz V GS = 0V
1 2 V DS 3 5 10 20 30 50
4
2
2
1 , DRAIN TO SOURCE VOLTAGE (V)
0 0 0.4 0.8 1.2 1.6 2 Q g , GATE CHARGE (nC)
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
VDD
t d(on)
t on tr
90%
t off t d(off)
90%
tf
V IN
D
RL V OUT
DUT
Output, Vout
VGS
10%
10% 90%
R GEN
Inverted
G
Input, Vin
S
10%
50%
50%
Pulse Width
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms.
BS270.SAM
Typical Electrical Characteristics (continued)
3 2 1
RD S( ON
im )L
it
10 1m 10 ms 10 0m s 1s 10 s DC s
0u
s
I D , DRAIN CURRENT (A)
0.5
0.1 0.05
V GS = 10V SINGLE PULSE
0.01 0.005 1 2 5 10 20 30 V DS , DRAIN-SOURCE VOLTAGE (V) 60 80
T A = 25C
Figure 13. Maximum Safe Operating Area.
1 TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
0.5
D = 0.5
0.2 0.1 0.05
0.2 0.1 P(pk) 0.05
R JA (t) = r(t) * R JA R
JA = (See Datasheet)
t1
0.02 0.01
t2
0.02 0.01 0.0001
Single Pulse
TJ - T A = P * RJA (t) Duty Cycle, D = t1 /t2
0.001
0.01
0.1 t 1, TIME (sec)
1
10
100
300
Figure 14. Transient Thermal Response Curve.
BS270.SAM
TO-92 Tape and Reel Data
TO-92 Packaging Configuration: Figure 1.0
TAPE and REEL OPTION
FSCINT Label sample
FAIRCHILD SEMICONDUCTOR CORPORATION LOT:
CBVK741B019
HTB:B QTY: 10000
See Fig 2.0 for various Reeling Styles
NSID:
PN2222N
SPEC:
D/C1:
D9842
SPEC REV: QA REV:
B2
FSCINT Label
(FSCINT)
5 Reels per Intermediate Box F63TNR Label Customized Label 375mm x 267mm x 375mm Intermediate Box
F63TNR Label sample
LOT: CBVK741B019 FSID: PN222N D/C1: D9842 D/C2: QTY1: QTY2: QTY: 2000 SPEC: SPEC REV: CPN: N/F: F
Customized Label
(F63TNR)3
TO-92 TNR/AMMO PACKING INFROMATION
Packing Reel Style A E Ammo M P Quantity 2,000 2,000 2,000 2,000 EOL code D26Z D27Z D74Z D75Z
AMMO PACK OPTION
See Fig 3.0 for 2 Ammo Pack Options
Unit weight = 0.22 gm Reel weight with components = 1.04 kg Ammo weight with components = 1.02 kg Max quantity per intermediate box = 10,000 units
FSCINT Label 327mm x 158mm x 135mm Immediate Box Customized Label 5 Ammo boxes per Intermediate Box F63TNR Label 333mm x 231mm x 183mm Intermediate Box
Customized Label
(TO-92) BULK PACKING INFORMATION
EOL CODE J18Z J05Z NO EOL CODE DESCRIPTION TO-18 OPTION STD TO-5 OPTION STD TO-92 STANDARD STRAIGHT FOR: PKG 92, 94 (NON PROELECTRON SERIES), 96 TO-92 STANDARD STRAIGHT FOR: PKG 94 (PROELECTRON SERIES BCXXX, BFXXX, BSRXXX), 97, 98 LEADCLIP DIMENSION NO LEAD CLIP NO LEAD CLIP NO LEADCLIP QUANTITY 2.0 K / BOX 1.5 K / BOX 2.0 K / BOX
BULK OPTION
See Bulk Packing Information table Anti-static Bubble Sheets
FSCINT Label
L34Z
NO LEADCLIP
2.0 K / BOX
2000 units per EO70 box for std option
114mm x 102mm x 51mm Immediate Box
5 EO70 boxes per intermediate Box 530mm x 130mm x 83mm Intermediate box Customized Label
FSCINT Label 10,000 units maximum per intermediate box for std option
(c)2001 Fairchild Semiconductor Corporation
March 2001, Rev. B1
TO-92 Tape and Reel Data, continued
TO-92 Reeling Style Configuration: Figure 2.0
Machine Option "A" (H) Machine Option "E" (J)
Style "A", D26Z, D70Z (s/h)
Style "E", D27Z, D71Z (s/h)
TO-92 Radial Ammo Packaging Configuration: Figure 3.0
FIRST WIRE OFF IS COLLECTOR ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON TOP FIRST WIRE OFF IS EMITTER ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON BOTTOM
ORDER STYLE D74Z (M)
ORDER STYLE D75Z (P)
FIRST WIRE OFF IS EMITTER (ON PKG. 92) ADHESIVE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON BOTTOM
FIRST WIRE OFF IS COLLECTOR (ON PKG. 92) ADHESIVE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON TOP
September 1999, Rev. B
TO-92 Tape and Reel Data, continued
TO-92 Tape and Reel Taping Dimension Configuration: Figure 4.0
Hd P Pd
b Ha H1 HO d L L1 W1 S WO W2 W
t
t1 P1 F1 P2 DO ITEM DESCRIPTION PO Base of Package to Lead Bend Component Height Lead Clinch Height Component Base Height Component Alignment ( side/side ) Component Alignment ( front/back ) Component Pitch Feed Hole Pitch Hole Center to First Lead Hole Center to Component Center Lead Spread Lead Thickness Cut Lead Length Taped Lead Length Taped Lead Thickness Carrier Tape Thickness SYMBOL b Ha HO H1 Pd Hd P PO P1 P2 F1/F2 d L L1 t t1 W WO W1 W2 DO S DIMENSION 0.098 (max) 0.928 (+/- 0.025) 0.630 (+/- 0.020) 0.748 (+/- 0.020) 0.040 (max) 0.031 (max) 0.500 (+/- 0.020) 0.500 (+/- 0.008) 0.150 (+0.009, -0.010) 0.247 (+/- 0.007) 0.104 (+/- 0 .010) 0.018 (+0.002, -0.003) 0.429 (max) 0.209 (+0.051, -0.052) 0.032 (+/- 0.006) 0.021 (+/- 0.006) 0.708 (+0.020, -0.019) 0.236 (+/- 0.012) 0.035 (max) 0.360 (+/- 0.025) 0.157 (+0.008, -0.007) 0.004 (max)
User Direction of Feed
TO-92 Reel Configuration: Figure 5.0
Carrier Tape Width Hold - down Tape Width Hold - down Tape position Feed Hole Position Sprocket Hole Diameter Lead Spring Out
Note : All dimensions are in inches.
ELECT ROSTATIC SEN SITIVE D EVICES
D4
D1 ITEM DESCRIPTION SYSMBOL MINIMUM MAXIMUM
F63TNR Label Customized Label
D2
Reel Diameter Arbor Hole Diameter (Standard) (Small Hole) Core Diameter Hub Recess Inner Diameter Hub Recess Depth Flange to Flange Inner Width W1 Hub to Hub Center Width W3 Note: All dimensions are inches
D1 D2 D2 D3 D4 W1 W2 W3
13.975 1.160 0.650 3.100 2.700 0.370 1.630
14.025 1.200 0.700 3.300 3.100 0.570 1.690 2.090
W2
D3
July 1999, Rev. A
TO-92 Package Dimensions
TO-92; TO-18 Reverse Lead Form (J35Z Option) (FS PKG Code 92, 94, 96)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in: inches [millimeters]
Part Weight per unit (gram): 0.22
* *;
Note: All package 97 or 98 transistors are leadformed to this configuration prior to bulk shipment. Order L34Z option if in-line leads are preferred on package 97 or 98. * Standard Option on 97 & 98 package code
January 2000, Rev. B
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST
DISCLAIMER
FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM
PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8
SyncFETTM TinyLogicTM UHCTM VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. G

▲Up To Search▲

Price & Availability of BS270

	To Download BS270 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .