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| EMF9 Transistors Power management (dual transistors) EMF9 2SC5585 and 2SK3019 are housed independently in a EMT6 package. !Application Power management circuit !External dimensions (Units : mm) !Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. 0.22 (4) (5) (6) (3) (2) (1) 1.2 1.6 0.5 !Structure Silicon epitaxial planar transistor ROHM : EMT6 0.13 Each lead has same dimensions Abbreviated symbol : F9 !Equivalent circuits (3) (2) (1) Tr2 Tr1 (4) (5) (6) !Packaging specifications Type Package Marking Code Basic ordering unit (pieces) EMF9 EMT6 F9 T2R 8000 0.5 0.5 1.0 1.6 1/5 EMF9 Transistors !Absolute maximum ratings (Ta=25C) Tr1 Symbol VCBO VCEO VEBO IC Collector current ICP Tj Junction temperature Tstg Range of storage temperature Single pulse PW=1ms Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Limits 15 12 6 500 1.0 150 -55~+150 Unit V V V mA A C C Tr2 Symbol Parameter VDSS Drain-source voltage VGSS Gate-source voltage ID Continuous Drain current IDP Pulsed IDR Continuous Reverse drain current IDRP Pulsed Tch Channel temperature Tstg Range of storage temperature PW10ms Duty cycle50% Limits 30 20 100 200 100 200 150 -55~+150 Unit V V mA mA mA mA C C Tr1, Tr2 Parameter Total power dissipation Symbol PD Limits 150(TOTAL) Unit mW 120mW per element must not be exceeded. Each terminal mounted on a recommended land. !Electrical characteristics (Ta=25C) Tr1 Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 12 15 6 - - - 270 - - Typ. - - - - - 100 - 320 7.5 Max. - - - 100 100 250 680 - - Unit V V V nA nA mV - MHz pF Conditions IC=1mA IC=10A IE=10A VCB=15V VEB=6V IC=200mA, IB=10mA VCE=2V, IC=10mA VCE=2V, IE=-10mA, f=100MHz VCB=10V, IE=0mA, f=1MHz Tr2 Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate-threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverce transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol IGSS V(BR)DSS IDSS VGS(th) RDS(on) |Yfs| Ciss Coss Crss td(on) tr td(off) tf Min. - 30 - 0.8 - - 20 - - - - - - - Typ. - - - - 5 7 - 13 9 4 15 35 80 80 Max. 1 - 1.0 1.5 8 13 - - - - - - - - Unit A V A V mS pF pF pF ns ns ns ns Conditions VGS=20V, VDS=0V ID=10A, VGS=0V VDS=30V, VGS=0V VDS=3V, ID=100A ID=10mA, VGS=4V ID=1mA, VGS=2.5V VDS=3V, ID=10mA VDS=5V, VGS=0V, f=1MHz ID=10mA, VDD 5V, VGS=5V, RL=500, RGS=10 2/5 EMF9 Transistors !Electrical characteristic curves Tr1 1000 COLLECTOR CURRENT : IC (mA) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) VCE=2V Pulsed DC CURRENT GAIN : hFE 1000 Ta=125C Ta=25C Ta=-40C 1000 Ta=25C Pulsed VCE=2V Pulsed 100 100 100 C Ta= -40 C Ta=12 5 C Ta=25 IC/IB=50 10 10 10 IC/IB=20 IC/IB=10 1 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 10 100 1000 1 1 10 100 1000 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.1 Grounded emitter propagation characteristics Fig.2 DC current gain vs. collector current Fig.3 Collector-emitter saturation voltage vs. collector current ( ) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) BASER SATURATION VOLTAGE : VBE (sat) (mV) 1000 IC/IB=20 Pulsed 10000 100 Ta=125C 25C -40C 10 1000 Ta=25C Ta=-40C TRANSITION FREQUENCY : fT (MHz) IC/IB=20 Pulsed 1000 VCE=2V Ta=25C Pulsed 100 Ta=125C 100 10 1 1 10 100 1000 10 1 10 100 1000 1 1 10 100 1000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) Fig.4 Collector-emitter saturation voltage vs. collector current ( ) Fig.5 Base-emitter saturation voltage vs. collector current Fig.6 Gain bandwidth product vs. emitter current EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1000 IE=0A f=1MHz Ta=25C 100 Cib 10 Cob 1 0.1 1 10 100 EMITTER TO BASE VOLTAGE : VEB(V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 3/5 EMF9 Transistors Tr2 GATE THRESHOLD VOLTAGE : VGS(th) (V) 200m 100m DRAIN CURRENT : ID (A) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) () VDS=3V Pulsed 2 50m 20m 10m 5m 2m 1m 0.5m VDS=3V ID=0.1mA Pulsed 50 VGS=4V Pulsed 20 10 5 1.5 Ta=125C 75C 25C -25C 1 Ta=125C 75C 25C -25C 2 1 0.5 0.001 0.002 0.5 0.2m 0.1m 0 1 2 3 4 0 -50 -25 0 25 50 75 100 125 150 0.005 0.01 0.02 0.05 0.1 0.2 0.5 GATE-SOURCE VOLTAGE : VGS (V) CHANNEL TEMPERATURE : Tch (C) DRAIN CURRENT : ID (A) Fig.9 Typical transfer characteristics Fig.10 Gate threshold voltage vs. channel temperature Fig.11 Static drain-source on-state resistance vs. drain current ( ) 50 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) () STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) () 20 10 5 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) () Ta=125C 75C 25C -25C VGS=2.5V Pulsed 15 Ta=25C Pulsed 9 8 7 6 5 4 3 2 1 0 -50 -25 0 25 50 75 ID=100mA VGS=4V Pulsed 10 ID=50mA 2 1 0.5 0.001 0.002 5 ID=0.1A ID=0.05A 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0 0 5 10 15 20 100 125 150 DRAIN CURRENT : ID (A) GATE-SOURCE VOLTAGE : VGS (V) CHANNEL TEMPERATURE : Tch (C) Fig.12 Static drain-source on-state resistance vs. drain current ( ) Fig.13 Static drain-source on-state resistance vs. gate-source voltage Fig.14 Static drain-source on-state resistance vs. channel temperature 0.5 REVERSE DRAIN CURRENT : IDR (A) 0.2 FORWARD TRANSFER ADMITTANCE : |Yfs| (S) 100m 50m 20m 10m 5m 2m 1m 0.5m 0.2m 0.1m REVERSE DRAIN CURRENT : IDR (A) VDS=3V Pulsed 200m VGS=0V Pulsed 200m 100m 50m 20m 10m 5m 2m 1m 0.5m 0.2m 0.1m VGS=4V Ta=25C Pulsed 0.1 0.05 0.02 0.01 0.005 0.002 0.001 0.0001 0.0002 Ta=-25C 25C 75C 125C Ta=125C 75C 25C -25C 0V 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0 0.5 1 1.5 0 0.5 1 1.5 DRAIN CURRENT : ID (A) SOURCE-DRAIN VOLTAGE : VSD (V) SOURCE-DRAIN VOLTAGE : VSD (V) Fig.15 Forward transfer admittance vs. drain current Fig.16 Reverse drain current vs. source-drain voltage ( ) Fig.17 Reverse drain current vs. source-drain voltage ( ) 4/5 EMF9 Transistors 50 Ta=25C f=1MHZ VGS=0V SWITHING TIME : t (ns) 1000 tf 500 td(off) 20 CAPACITANCE : C (pF) 200 100 50 20 10 5 2 0.1 0.2 tr td(on) Ta=25C VDD=5V VGS=5V RG=10 Pulsed 10 5 Ciss Coss Crss 2 1 0.5 0.1 0.2 0.5 1 2 5 10 20 50 0.5 1 2 5 10 20 50 100 DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN CURRENT : ID (mA) Fig.18 Typical capacitance vs. drain-source voltage Fig.19 Switching characteristics 5/5 |
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