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ES3A/B-ES3D/B
Vishay Lite-On Power Semiconductor
3.0A Surface Mount Ultra-Fast Rectifier
Features
D Glass passivated die construction D Super-fast recovery time for high efficiency D Low forward voltage drop and high current
capability
D Surge overload rating to 100A peak D Ideally suited for automated assembly D Plastic material - UL Recognition flammability
classification 94V-0
SMB
SMC
14 429
Absolute Maximum Ratings
Tj = 25_C Parameter Repetitive peak reverse voltage g =Working peak reverse voltage DC Blocking lt =DC Bl ki voltage Peak forward surge current Average forward current Junction and storage temperature range Test Conditions Type ES3A/B ES3B/B ES3C/B ES3D/B TT=100C Symbol VRRM =VRWM V =VR IFSM IFAV Tj=Tstg Value 50 100 150 200 100 3.0 -65...+150 Unit V V V V A A C
Electrical Characteristics
Tj = 25_C Parameter Forward voltage Reverse current Reverse recovery time Diode capacitance Thermal resistance junction to terminal Test Conditions IF=3A TA=25C TA=125C IF=1A, IR=0.5A, Irr=0.25A VR=4V, f=1MHz on PC board with 5.0mm2 Type Symbol VF IR IR trr CD RthJT Min Typ Max 0.9 10 500 25 Unit V
mA mA
ns pF K/W
45 15
Rev. A2, 24-Jun-98
1 (4)
ES3A/B-ES3D/B
Vishay Lite-On Power Semiconductor Characteristics (Tj = 25_C unless otherwise specified)
IFSM - Peak Forward Surge Current ( A ) 3.0 IFAV - Average Forward Current ( A )
Single Half Sine-Wave (JEDEC Method)
100 80 60 40 20 0 1 10 Number of Cycles at 60 Hz 100
2.0
1.0
0 25
15405
50
75
100
125
150
175
15407
Tamb - Ambient Temperature ( C )
Figure 1. Max. Average Forward Current vs. Ambient Temperature
10
Figure 3. Max. Peak Forward Surge Current vs. Number of Cycles
1000 IR - Reverse Current ( m A )
IF - Forward Current ( A )
1.0
100
Tj = 125C
0.1
10
Tj = 25C
Tj = 25C IF Pulse Width = 300 s
0.01 0
15406
1.0 0.4 0.8 1.2 1.6
15408
0
40
80
120
VF - Forward Voltage ( V )
Percent of Rated Peak Reverse Voltage (%)
Figure 2. Typ. Forward Current vs. Forward Voltage
Figure 4. Typ. Reverse Current vs. Percent of Rated Peak Reverse Voltage
2 (4)
Rev. A2, 24-Jun-98
ES3A/B-ES3D/B
Vishay Lite-On Power Semiconductor Dimensions in mm
14464
Case: molded plastic Polarity: cathode band or cathode notch Approx. weight: SMB 0.093 grams, SMC 0.21 grams Mounting position: any Marking: type number
Rev. A2, 24-Jun-98
3 (4)
ES3A/B-ES3D/B
Vishay Lite-On Power Semiconductor Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
4 (4)
Rev. A2, 24-Jun-98

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