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| HL1326GN 1.3 m InGaAsP Laser Diode Description The HL1326GN is a 1.3 m InGaAsP Fabry-Perot laser diode with a multi-quantum well (MQW) structure. It is suitable as a light source in short and medium range fiberoptiic communication systems and other types of optical equipment. It has high optical power with low drive current and wide operating temperature range (-40 to +85C). The compact package is suitable for module assembly. Features * Wide operating temperature range: Topr = -40 to +85C High output power:10 mW(Pulse) 5 mW(CW) * Low operating current : Iop (PO = 5mW) = 20 mA (typ. @Tc = 25C) Iop (PO = 5mW) = 40 mA (typ. @Tc = 85C) 200 HL1326GN Absolute Maximum Ratings Item Optical output power Symbol PO Value 10(Pulse) 5(CW) LD reverse voltage PD reverse voltage PD forward current Operating temperature Storage temperature VR(LD) VR(PD) I F(PD) Topr Tstg 2 15 1 -40 to +85 -40 to +100 *1 Unit mW mW V V mA C C Note 1: Maximum 50% duty cycle, maximum 1s pulse width. Optical and Electrical Characteristics (TC = 25C) Item Threshold current Optical output power Slope efficiency Symbol Min Ith PO s -- 5 0.3 0.15 Lasing wavelength Spectral width Beam divergence (parallel) c // 1280 -- -- -- -- -- 100 -- -- -- Typ 8 -- 0.4 0.25 1310 2 30 40 -- -- -- -- 15 -- Max 20 -- -- -- 1340 nm -- -- -- 0.5 0.5 -- 350 20 2 nm deg. deg. ns ns A nA pF V Unit mA mW mW/m A Kink free *2 TC = 25C TC = 85C PO = 5 mW, RMS PO = 5 mW, RMS PO = 5 mW, FWHM PO = 5 mW, FWHM 10 to 90 % 90 to 10 % PO = 5 mW, VR(PD) = 5 V VR(PD) = 5 V VR(PD) = 5 V, f = 1 MHz Test Conditions Beam divergence(perpendicular) Rise time Fall time Monitor current PD dark current PD capacitance Photosensitivity saturation voltage tr tf Is I (DARK) Ct VR(S) Note 2: Kink free up to 5mW is confirmed at the temperatures of 10C, 25C and 85C. 201 HL1326GN Typical Characteristics Curves 202 HL1326GN 203 HL1326GN Typical Characteristics Curves 204 HL1326GN 205 HL1326GN Typical Characteristics Curves 206 |
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