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| ADE-208-164C(Z) HRF32 Silicon Schottky Barrier Diode for High Frequency Rectifying Rev. 3 Feb. 1996 Features * Good for high-frequency rectify for VR=90V, Io=1.0A, Output voltage=12Vmax. * LRP structure ensures higher reliability. Outline Cathode mark Mark Ordering Information Type No. HRF32 Lazer Mark 32 Package Code LRP 1 32 2 1. Cathode 2. Anode Absolute Maximum Ratings (Ta = 25C) Item Repetitive peak reverse voltage Average forward current Non-Repetitive peak forward surge current Symbol VRRM Io IFSM* Tj Tstg Value 90 1.0 20 125 -40 to +125 Unit V A A C C Junction temperature Storage temperature * 10msec sine wave 1 pulse Electrical Characteristics (Ta = 25C) Item Forward voltage Reverse current ESD-Capability Symbol VF IR -- Min -- -- 150 Typ -- -- -- Max 0.8 1.0 -- Unit V mA V Test Condition I F = 1.0 A VR = 90 V *C=200pF R=0 Both forward and reversedirection 1 pulse. HRF32 1.0 Pulse test 10 Forward current I F (A) 10 10 10 10 -1 10 -4 Pulse test -3 Reverse current I R (A) 0 0.1 0.2 0.3 0.4 0.5 -2 10 -5 -4 10 -6 -5 10 10-6 10 -7 -7 10 -8 0 20 Forward voltage VF (V) Fig.1 Forward current Vs. Forward voltage 40 60 80 Reverse voltage VR (V) 100 Fig.2 Reverse current Vs. Reverse voltage Package Dimensions Cathode Mark Unit: mm 1 4.5 0.2 5.0 0.3 2 1 Cathode 2 Anode 2.0 0.3 0.2 1.5 0.2 2.5 0.3 HITACHI Code JEDEC Code EIAJ Code Weight (g) 32 LRP -- -- 0.058 1.2 0.3 1.2 0.3 |
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