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  Datasheet File OCR Text:
 ADE-208-110D(Z)
HRW0703A Silicon Schottky Barrier Diode for Rectifying
Rev. 4 Nov. 1994 Features
* Low forward voltage drop and suitable for high effifiency rectifying. * MPAK package is suitable for high density surface mounting and high speed assembly.
2
Pin Arrangement
3
1
Ordering Information
Type No. HRW0703A Laser Mark S8 Package Code MPAK
(Top View)
1 NC 2 Anode 3 Cathode
Absolute Maximum Ratings (Ta = 25C)
Item Repetitive peak reverse voltage Forward current
Non-Repetitive peak forward surge current
Junction temperature Storage temperature * See Fig.4 & Fig.5
Symbol VRRM* IF* IFSM** Tj Tstg
Value 30 700 5 125 -55 to +125
Unit V mA A C C
** 50Hz sine wave 1 pulse
Electrical Characteristics (Ta = 25C)
Item Reverse current Forward voltage Capacitance Thermal resistance * Polyimide PCB Symbol Min IR -- VF -- C -- Rth1(j-a) -- Rth2(j-a) --
20hx15wx0.8t
1.5
Typ -- -- 150 390 290
Max 100 0.5 -- -- --
Unit A V pF C/W C/W
Test Condition VR = 30 V IF = 700 mA VR= 0V, f= 1MHz Polyimide substrate *
Ceramic substrate **
20hx15wx0.65t
** Ceramic PCB
0.8
1.5
3.0
4.2
1.5
Unit: mm
2.0
2.0
Unit: mm
HRW0703A
10 Pulse test
10 -1 Pulse test 10 -2
Forward current I F (A)
1.0 Ta=75C
Reverse current I R (A)
10
-3
Ta=25C 10
-1
10 -4
Ta=75C
10
-5
Ta=25C 10
-2
0
0.6 0.8 0.2 0.4 Forward voltage VF (V) Fig.1 Forward current Vs. Forward voltage
1.0
10
-6
0
10
20
30
40
50
Reverse voltage VR (V) Fig.2 Reverse current Vs. Reverse voltage
10
2
f=1MHz Pulse test
Capacitance C (pF)
10
1.0 1.0 10 Reverse voltage VR (V) Fig.3 Capacitance Vs. Reverse voltage 40
HRW0703A
0.8
Forward current (A) Forward current (A)
0.8
DC(Forward bias) Duty=2/3 Duty=1/2
0.6 0.4 0.2
0.6
Duty=1/3
DC(Forward bias) Duty=2/3 Duty=1/2
Duty=1/3
0.4 0.2 0
Rth2=290C/W Vout = 5V
Rth1=390C/W Vout = 5V
0
0
25
50
75 100 125 150
0
25
50
75 100 125 150
Ambient temperature Ta (C)
Ambient temperature Ta (C)
40
Repetitive peak reverse voltage (V)
Repetitive peak reverse voltage (V)
Rth1=390C/W I FM =0.7A
Duty=2/3 Duty=1/3 Duty=1/2 DC(Reverse bias)
40 30
Duty=1/3
Rth2=290C/W I FM =0.7A
Duty=2/3 DC(Reverse bias)
30 20 10 0 0 25 50
20 10 0
Duty=1/2
75 100 125 150
0
25
50
75 100 125 150
Ambient temperature Ta (C)
Ambient temperature Ta (C)
Fig.4 Forward current Vs. Ambient temperature (Polyimide substrate)
Fig.5 Repetitive peak reverse voltage Vs. Ambient temperature (Ceramic substrate)
Package Dimensions
0.65 - 0.3
+ 0.1
Unit: mm
Laser Mark
0.4 - 0.05
+ 0.10
0.16 - 0.06
+ 0.10
3
+ 0.2 - 0.6
0.1 0.65 + 0.3 -
2 0.95
1 0.95
2.8
S8
1.9
0.3 2.8 + 0.1 -
1.5
0 - 0.10
1 NC 2 Anode 3 Cathode HITACHI Code MPAK(1) JEDEC Code EIAJ Code Weight (g) -- SC-59A 0.011
0.3
1.1 - 0.1
+ 0.2


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