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 HSC119
Silicon Epitaxial Planar Diode for High Speed Switching
ADE-208-615 (Z) Rev 0 Apr. 1998 Features
* Low capacitance. (C=2.0pF max) * Short reverse recovery time. (trr =3.0ns max) * Ultra small F lat P ackage (UFP) is suitable for surface mount design.
Ordering Information
Type No. HSC119 Laser Mark H1 Package Code UFP
Outline
Cathode mark Mark 1
H1
2 1. Cathode 2. Anode
HSC119
Absolute Maximum Ratings (Ta = 25C)
Item Peak reverse voltage Reverse voltage Average forward current Peak rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Note Symbol VRM VR IO I FM I FSM Tj Tstg
*1
Value 85 80 100 300 4 125 -55 to +125
Unit V V mA mA A C C
1. Within 1s forward surge current.
Electrical Characteristics (Ta = 25C)
Item Forward voltage Symbol VF1 VF2 Reverse current Capacitance Reverse recovery time*1 IR C t rr Min -- -- -- -- -- Typ -- -- -- -- -- Max 0.8 1.2 0.1 2.0 3.0 A pF ns Unit V Test Condition I F = 10 mA I F = 100 mA VR = 80V VR = 0V, f = 1 MHz I F = 10 mA, VR = 6V RL=50
Notes 1. Reverse recovery time test circuit
DC Supply
0.1F
3k Sampling Rin =50 Oscilloscope
Ro =50 Pulse Generator
Trigger
2
HSC119
Main Characteristic
-4
1.0
10 10
Reverse current I R (A)
-5
(A)
Forward current IF
10
-1
10 10 10 10 10
-6
Ta=75C Ta=50C
-7
Ta=25C
-8
10
-2
Ta= 75 C Ta= 25C Ta=25C
-9
-10
10
-3
10 0 0.2 0.4 0.6 0.8 1.0 1.2 Forward voltage V F (V)
-11
0
20
40
60
80
100
Reverse voltage V R (V) Fig.2 Reverse current Vs. Reverse voltage
Fig.1 Forward current Vs. Forward voltage
f=1MHz
10
(pF) Capacitance C
1.0
10 -1 10
-1
1.0 Reverse voltage V R (V)
10
Fig.3 Capacitance Vs. Reverse voltage
3
HSC119
Package Dimensions
Unit : mm
Cathode Mark 1
H1
1.2 0.10 1.6 0.10
2 0.3 0.05 0.8 0.10
1. Cathode 2. Anode Hitachi Code JEDECCode EIAJCode Weight(g) 0.6 0.10
UFP
-- SC-79 0.0016
4
HSC119
When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS.
Hitachi, Ltd.
Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi Semiconductor (America) Inc. 2000 Sierra Point Parkway Brisbane, CA. 94005-1897 USA Tel: 800-285-1601 Fax:303-297-0447
Hitachi Europe GmbH Continental Europe Dornacher Strae 3 D-85622 Feldkirchen Munchen Tel: 089-9 91 80-0 Fax: 089-9 29 30-00
Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 01628-585000 Fax: 01628-585160
Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071
Copyright (c) Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.
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