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  Datasheet File OCR Text:
 ADE-208-092C(Z)
HSM223C Silicon Epitaxial Planar Diode for High Speed Switching
Rev. 3 Aug. 1995 Features
* Low capacitance, proof against high voltage. * Fast recovery time. * MPAK package is suitable for high density surface mounting and high speed assembly.
2
Pin Arrangement
3
1
Ordering Information
Type No. HSM223C Laser Mark A8 Package Code MPAK
(Top View)
1 NC 2 Cathode 3 Anode
Absolute Maximum Ratings (Ta = 25C)
Item Peak reverse voltage Reverse voltage Peak forward current
Non-Repetitive peak forward surge current
Symbol VRM VR IFM IFSM * Io Tj Tstg
Value 85 80 300 4 100 125 -55 to +125
Unit V V mA A mA C C
Average forward current Junction temperature Storage temperature * Within 1s forward surge current.
Electrical Characteristics (Ta = 25C)
Item Forward voltage Reverse current Capacitance
Reverse recovery time
Symbol VF1 VF2 VF3 IR C trr
Min -- -- -- -- -- --
Typ 0.76 0.88 0.97 -- 0.5 --
Max 1.0 1.0 1.2 0.1 2.0 3.0
Unit V A pF ns
Test Condition IF = 10 mA IF = 50 mA IF = 100 mA VR = 80 V VR = 0 V, f = 1 MHz IF= 10mA, VR=6V, RL=50
HSM223C
10
-1
10 10 Reverse current I R (A)
-4
-5
Forward current I F (A)
10
-2
10 10 10 10
-6
Ta=75C
-7
10
-3
Ta =7 5 C Ta =2 5 C Ta= -25 C
Ta=50C Ta=25C
-8
10
-4
-9
Ta= 0 C Ta=-25C
10
-5
10 10
-6
-10
10 0 0.6 0.8 0.2 0.4 Forward voltage VF (V) Fig.1 Forward current Vs. Forward voltage 1.0
-11
0
60 80 20 40 Reverse voltage VR (V) Fig.2 Reverse current Vs. Reverse voltage
100
f=1MHz
10 Capacitance C (pF)
1.0
10
-1
1.0
10 Reverse voltage VR (V) Fig.3 Capacitance Vs. Reverse voltage
102
HSM223C
Package Dimensions
0.65 - 0.3
+ 0.1
Unit: mm
Laser Mark
0.4 - 0.05
+ 0.10
0.16 - 0.06
+ 0.10
3
+ 0.2 - 0.6
0.1 0.65 + 0.3 -
2 0.95
1 0.95
2.8
A8
1.9
0.3 2.8 + 0.1 -
1.5
0 - 0.10
1 NC 2 Cathode 3 Anode HITACHI Code MPAK(1)
1.1 - 0.1
+ 0.2
0.3
JEDEC Code EIAJ Code Weight (g)
-- SC-59A 0.011


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