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| ADE-208-095A(Z) HSM2694 Silicon Epitaxial Planar Diode for Tuner Band Switch Preliminary Rev. 1 Jun. 1993 Features * Low forward resistance. (rf =0.9 max) * Low capacitance. (C =1.2pF max) * MPAK package is suitable for high density surface mounting and high speed assembly. 2 Pin Arrangement 3 1 Ordering Information Type No. HSM2694 Laser Mark B3 Package Code MPAK (Top View) 1 Cathode 2 Cathode 3 Anode Absolute Maximum Ratings (Ta = 25C) Item Reverse voltage Power dissipation Junction temperature Storage temperature Operation temperature * Two device total Symbol VR pd * Tj Tstg Topr Value 35 150 125 -45 to +125 -20 to +60 Unit V mW C C C Electrical Characteristics (Ta = 25C) * Item Reverse voltage Reverse current Forward voltage Capacitance Forward resistance * Per one device Symbol Min VR IR VF C rf 35 -- -- -- -- Typ -- -- -- -- -- Max -- 50 1.0 1.2 0.9 Unit V nA V pF Test Condition IR = 10 A VR = 25 V IF = 10 mA VR= 6 V, f = 1 MHz IF= 2mA, f=100 MHz HSM2694 2.0 f=100MHz 10 f=1MHz Forward resistance r f ( ) 1.5 Capacitance C (pF) -4 1.0 1.0 0.5 0 10 10-3 Forward current I F (A) Fig.1 Forward resistance Vs. Forward current 10 -2 10 -1 1.0 10 Reverse voltage VR (V) Fig.2 Capacitance Vs. Reverse voltage 40 IF=2mA Forward resistance r f ( ) 10 1.0 10 -1 1.0 10 Frequency f (MHz) Fig.3 Forward resistance Vs. Frequency 102 HSM2694 Package Dimensions 0.65 - 0.3 + 0.1 Unit: mm Laser Mark 0.4 - 0.05 + 0.10 0.16 - 0.06 + 0.10 3 + 0.2 - 0.6 0.1 0.65 + 0.3 - 2 0.95 1 0.95 2.8 B3 1.9 0.3 2.8 + 0.1 - 1.5 0 - 0.10 1 Cathode 2 Cathode 3 Anode HITACHI Code MPAK(1) JEDEC Code EIAJ Code Weight (g) -- SC-59A 0.011 0.3 1.1 - 0.1 + 0.2 ADE-208-018F(Z) HSU277 Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch Rev. 5 Sep. 1995 Features * Low forward resistance. (rf=0.7 max) * Ultra small Resin Package (URP) is suitable for surface mount design. Outline Cathode mark Mark 1 2 1. Cathode 2. Anode Ordering Information Type No. HSU277 Laser Mark 3 Package Code URP Absolute Maximum Ratings (Ta = 25C) Item Reverse voltage Junction temperature Power dissipation Operation temperature Storage temperature Symbol VR Tj Pd Topr Tstg Value 35 125 150 -20 to + 60 -45 to +125 Unit V C mW C C Electrical Characteristics (Ta = 25C) Item Reverse voltage Reverse current Forward voltage Capacitance Forward resistance Symbol VR IR VF C rf Min 35 -- -- -- -- Typ -- -- -- -- -- Max -- 50 1.0 1.2 0.7 Unit V nA V pF Test Condition IR = 10 A VR = 25 V IF = 10 mA VR = 6 V , f = 1 MHz IF = 2 mA , f = 100 MHz HSU277 10 -2 10 -3 Reverse current I R (A) 0.2 0.4 1.0 Forward current I F (A) 10 -4 -5 10 -6 10 -7 10 -8 10 10 -9 10 10 -6 -10 10-7 10 -8 10 -9 10 10 -11 -12 10 0 0.6 0.8 Forward voltage VF (V) Fig.1 Forward current Vs. Forward voltage -13 0 10 20 30 40 50 Reverse voltage VR (V) Fig.2 Reverse current Vs. Reverse voltage 10 f=1MHz 2.5 f=100MHz 2.0 Forward resistance rf ( ) Capacitance C (pF) 1.5 1.0 1.0 0.5 -1 10 1.0 10 Reverse voltage VR (V) Fig.3 Capacitance Vs. Reverse voltage 40 0 10-4 10-3 Forward current I F (A) Fig.4 Forward resistance Vs. Forward current 10 -2 HSU277 Package Dimensions Unit: mm Cathode Mark 1.250.15 0.30.15 3 1 1.70.15 2.50.15 2 1 Cathode 2 Anode 0.90.15 00.05 HITACHI Code JEDEC Code EIAJ Code Weight (g) URP -- -- 0.004 |
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