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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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The Wideband IC Line
RF LDMOS Wideband Integrated Power Amplifier
The MW4IC001MR4 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Motorola's newest High Voltage (26 to 28 Volts) LDMOS IC technology. Its wideband On Chip design makes it usable from 800 MHz to 2.2 GHz. The linearity performances cover all modulations for cellular applications: GSM EDGE, TDMA, CDMA and W-CDMA. * Typical CW Performance at 2170 MHz, 28 Volts, IDQ = 12 mA Output Power -- 900 mW PEP Power Gain -- 13 dB Efficiency -- 38% * High Gain, High Efficiency and High Linearity * Designed for Maximum Gain and Insertion Phase Flatness * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * In Tape and Reel. R4 Suffix = 100 Units per 12 mm, 7 inch Reel.
MW4IC001MR4
W-CDMA 0.8-2.17 GHz, 900 mW, 28 V RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIER
CASE 466-02, STYLE 1 PLD-1.5 PLASTIC
MAXIMUM RATINGS
Rating Drain-Source Voltage Gate-Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Characteristic Thermal Resistance, Junction to Case @ 85C Symbol RJC Value 65 - 0.5, +15 4.58 0.037 - 65 to +150 150 Unit Vdc Vdc W W/C C C
THERMAL CHARACTERISTICS
Max 27.3 Unit C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions Human Body Model Machine Model Charge Device Model Class 0 (Minimum) M1 (Minimum) C2 (Minimum)
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 0
MOTOROLA RF Motorola, Inc. 2003 DEVICE DATA
MW4IC001MR4 1
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Zero Gate Voltage Drain Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 V, ID = 50 A) Gate Quiescent Voltage (VDS = 28 V, ID = 10 mA) Drain-Source On-Voltage (VGS = 10 V, ID = 0.05 A) Forward Transconductance (VDS = 10 V, ID = 0.1 A) DYNAMIC CHARACTERISTICS Output Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) Two-Tone Common Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 0.9 W PEP, IDQ = 12 mA, f = 2170 MHz, Tone Spacing = 100 kHz) Two-Tone Drain Efficiency (VDD = 28 Vdc, Pout = 0.9 W PEP, IDQ = 12 mA, f = 2170 MHz, Tone Spacing = 100 kHz) Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 0.9 W PEP, IDQ = 12 mA, f = 2170 MHz, Tone Spacing = 100 kHz) Input Return Loss (VDD = 28 Vdc, Pout = 0.9 W PEP, IDQ = 12 mA, f = 2170 MHz, Tone Spacing = 100 kHz) Output Power, 1 dB Compression Point, CW (VDD = 28 Vdc, IDQ = 12 mA, f = 2170 MHz) Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 0.9 W CW, IDQ = 12 mA, f = 2170 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 0.9 W CW, IDQ = 12 mA, f = 2170 MHz) Input Return Loss (VDD = 28 Vdc, Pout = 0.9 W CW, IDQ = 12 mA, f = 2170 MHz) Gps -- 13 -- dB Coss Crss -- -- 45 0.62 -- -- pF pF VGS(th) VGS(Q) VDS(on) gfs 2 2 -- -- 3 3.7 0.48 0.05 5 5 0.9 -- Vdc Vdc Vdc S IDSS IDSS IGSS -- -- -- -- -- -- 10 10 1 Adc Adc Adc Symbol Min Typ Max Unit
--
29
--
%
IMD
--
-28
--
dBc
IRL
--
-18
--
dB
P1dB Gps IRL
-- 12 35 -10
0.85 13 38 -16
-- -- -- --
W dB % dB
MW4IC001MR4 2
MOTOROLA RF DEVICE DATA
VGG C1 C2 Z6 Z7 R1 RF INPUT DUT Z8 L2 Z9 Z10 Z11 C5 C11 Z12 C12 Z13 C13 RF OUTPUT + VDD C8
C7
C6
Z1 C9 C10 C3
Z2 L1
Z3
Z4
R2 C4
Z5
Z1 Z2 Z3 Z4 Z5 Z6, Z7 Z8
1.331 x 0.044 Microstrip 0.126 x 0.076 Microstrip 0.065 x 0.175 Microstrip 0.065 x 0.195 Microstrip 0.680 x 0.145 Microstrip 1.915 x 0.055 Microstrip 0.120 x 0.141 Microstrip
Z9 Z10 Z11 Z12 Z13 PCB
0.062 x 0.044 to 0.615 Taper 0.082 x 0.615 Microstrip 0.075 x 0.044 Microstrip 0.625 x 0.044 Microstrip 1.375 x 0.044 Microstrip Rogers RO4350, 0.020, r = 3.5
Figure 1. MW4IC001MR4 900 MHz Test Circuit Schematic
Table 1. MW4IC001MR4 900 MHz Test Circuit Component Designations and Values
Part C1, C6 C2, C3, C5, C7 C4 C8 C9 C10, C11 C12 C13 L1 L2 R1 R2 Description 0.1 F, 100 V Chip Capacitors 43 pF, 500 V Chip Capacitors 12 pF, 500 V Chip Capacitor 22 F, 35 V Tantalum Chip Capacitor 4.7 pF, 500 V Chip Capacitor 0.6-4.5 pF, 500 V Variable Capacitors 2.7 pF, 500 V Chip Capacitor 3.3 pF, 500 V Chip Capacitor 5.6 nH Chip Inductor 10 nH Chip Inductor 100 W Chip Resistor 20 W Chip Resistor Part Number C1210C104K5RACTR 100B430JP500X 100B120JP500X T491X226K035AS 100B4R7CP500X 27271SL 100B2R7CP500X 100B3R3CP500X 0805 Series 1008 Series CRCW12061001F100 CRCW120620R0F100 Manufacturer Kemet ATC ATC Kemet ATC Johanson ATC ATC AVX ATC Dale Dale
MOTOROLA RF DEVICE DATA
MW4IC001MR4 3
V GG C1 C2 C6
V DD C8 C7
C9 C10
C3
R1 C4 L1 R2 L2 C5
C12 C11 C13
MW4IC001MR4 900 MHz Rev 2
Figure 2. MW4IC001MR4 900 MHz Test Circuit Component Layout
MW4IC001MR4 4
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS - 900 MHz
IRL VDS = 28 Vdc Pout = 0.9 W (PEP) IDQ = 14 mA Two-Tone Measurement 100 kHz Tone Spacing IM3 Gps 860 865 870 875 880 885 890 895 900 IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) 50 46 42 , DRAIN EFFICIENCY (%) G ps , POWER GAIN (dB) 38 34 30 26 22 18 14 10 855 -15 -17 -19 -21 -23 -25 -27 -29 -31 -33 -35 905
f1, FREQUENCY (MHz)
Figure 3. Two-Tone Performance versus Frequency
15 14 13 G ps , POWER GAIN (dB) 12 11 10 9 8 7 6 0
IMD, INTERMODULATION DISTORTION (dBc)
Gps
60 55 , DRAIN EFFICIENCY (%) 50 P1dB 45 40 35 30 VDS = 28 Vdc IDQ = 14 mA f = 880 MHz 0.2 0.4 0.6 0.8 1.0 1.2 25 20 15 1.4
-25 -30 -35 -40 -45 -50 -55 VDS = 28 Vdc f1 = 880 MHz f2 = 880.1 MHz
IDQ = 8 mA 10 mA 18 mA
16 mA 14 mA Two-Tone Measurement 100 kHz Tone Spacing 12 mA 0.01 0.1 1 10 Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS)
Figure 4. CW Performance versus Output Power
Figure 5. Intermodulation Distortion versus Output Power
-25 IMD, INTERMODULATION DISTORTION (dBc) -30 -35 -40 -45 -50 -55 -60 -65 -70 0.01 5th Order 7th Order 0.1 Two-Tone Measurement 100 kHz Tone Spacing 1 10 3rd Order VDS = 28 Vdc IDQ = 14 mA f1 = 880 MHz f2 = 880.1 MHz IMD, INTERMODULATION DISTORTION (dBc)
-25 -30 -35 -40 10 MHz -45 -50 0.01 1 MHz Tone Spacing = 100 kHz 0.1 VDS = 28 Vdc IDQ = 14 mA f1 = 880 MHz, f2 = f1 + Tone Spacing Two-Tone Measurement 1 10
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion Products versus Output Power
Figure 7. Third Order Intermodulation Distortion versus Output Power
MOTOROLA RF DEVICE DATA
MW4IC001MR4 5
VGG
Z5 + Z12 C1 C2 Z4 Z11 R1 RF INPUT DUT Z8 Z9 Z10 Z13 Z14 C5 Z15 RF OUTPUT C4 + C6 VDD
Z1 C3
Z2
Z3
Z6
Z7
C7
Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8
1.018 x 0.044 Microstrip 0.495 x 0.296 Microstrip 0.893 x 0.500 Microstrip 1.340 x 0.022 Microstrip 0.912 x 0.022 Microstrip 0.241 x 0.500 Microstrip 0.076 x 0.150 Microstrip 0.294 x 0.150 Microstrip
Z9 Z10 Z11 Z12 Z13 Z14 Z15 PCB
0.067 x 0.264 Microstrip 0.457 x 0.492 Microstrip 0.719 x 0.022 Microstrip 1.149 x 0.022 Microstrip 0.677 x 0.434 Microstrip 0.095 x 0.264 Microstrip 0.772 x 0.044 Microstrip Rogers RO4350, 0.020, r = 3.5
Figure 8. MW4IC001MR4 1.99 GHz Test Circuit Schematic
Table 2. MW4IC001MR4 1.99 GHz Test Circuit Component Designations and Values
Part C1, C6 C2, C4 C3, C5 C7 R1 Description 22 F, 35 V Tantalum Capacitors 10 pF, 500 V Chip Capacitors 10 pF, 500 V Chip Capacitor 0.6-4.5 pF, 500 V Variable Capacitor 1 kW Chip Resistor Part Number T491X226K035AS 100B100JCA500X 600S100JW 27271SL CRCW12061021F100 Manufacturer Kemet ATC ATC Johanson Dale
VGG
C1 C2 R1 C3 C4
VDD
C6
C5
C7
MW4IC001MR4 1.99 GHz Rev 3
Figure 9. MW4IC001MR4 1.99 GHz Test Circuit Component Layout
MW4IC001MR4 6
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS - 1.99 GHz
IRL IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) 40 35 G ps , POWER GAIN (dB) , DRAIN EFFICIENCY (%) 30 25 20 15 10 5 0 1930 1940 1950 1960 1970 1980 Gps IMD VDD = 28 Vdc, Pout = 0.9 W (PEP), IDQ = 12 mA Two Tone Measurement, 100 kHz Tone Spacing -11 -14 -17 -20 -23 -26 -29 -32 -35 1990
f1, FREQUENCY (MHz)
Figure 10. Two-Tone Performance versus Frequency
Gps
IMD, INTERMODULATION DISTORTION (dBc)
14.4 14.0 G ps , POWER GAIN (dB) 13.6 13.2
56 48 40 32 24 16 1.1 1.2 1.3
-30 -35 -40 -45 16 mA -50 -55 -60 9.6 mA 0.01 12 mA VDD = 28 Vdc f1 = 1990 MHz, f2 = 1990.1 MHz Two-Tone Measurement 100 kHz Tone Spacing 0.1 Pout, OUTPUT POWER (WATTS) PEP 1 IDQ = 20 mA
P1dB VDD = 28 Vdc IDQ = 12 mA f = 1990 MHz 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
12.8 12.4 0.1
Pout, OUTPUT POWER (WATTS)
Figure 11. CW Performance versus Output Power
, DRAIN EFFICIENCY (%)
Figure 12. Intermodulation Distortion versus Output Power
-35 -40 -45 -50 -55 -60 -65 -70 -75 7th Order VDD = 28 Vdc IDQ = 12 mA, f1 = 1990 MHz, f2 = 1990.1 MHz Two Tone Measurement, 100 kHz Tone Spacing 0.1 OUTPUT POWER (WATTS) PEP 1 3rd Order 5th Order
IMD, THIRD ORDER INTERMODULATION (dBc)
-30 IMD, INTERMODULATION DISTORTION (dBc)
-30 -35 -40 10 MHz -45 -50 -55 -60 100 kHz 0.01 0.1 Pout, OUTPUT POWER (WATTS) PEP 1 MHz VDD = 28 Vdc IDQ = 12 mA f1 = 1990 MHz f2 = f1 + Tone Spacing Two-Tone Measurement 1
0.01
Figure 13. Intermodulation Distortion Products versus Output Power
Figure 14. Third Order Intermodulation Distortion versus Output Power
MOTOROLA RF DEVICE DATA
MW4IC001MR4 7
VGG
Z5 + Z12 C1 C2 Z4 Z11 R1 RF INPUT DUT Z8 Z9 Z10 Z13 Z14 C5 Z15 RF OUTPUT C4 + C6 VDD
Z1 C3
Z2
Z3
Z6
Z7
C7
Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8
1.267 x 0.044 Microstrip 0.058 x 0.044 Microstrip 0.758 x 0.256 Microstrip 1.073 x 0.022 Microstrip 1.361 x 0.022 Microstrip 0.205 x 0.332 Microstrip 0.109 x 0.150 Microstrip 0.210 x 0.150 Microstrip
Z9 Z10 Z11 Z12 Z13 Z14 Z15 PCB
0.106 x 0.344 Microstrip 0.783 x 0.500 Microstrip 0.847 x 0.022 Microstrip 1.055 x 0.022 Microstrip 0.291 x 0.387 Microstrip 0.050 x 0.287 Microstrip 0.950 x 0.044 Microstrip Rogers RO4350, 0.020, r = 3.5
Figure 15. MW4IC001MR4 2.17 GHz Test Circuit Schematic
Table 3. MW4IC001MR4 2.17 GHz Test Circuit Component Designations and Values
Part C1, C6 C2, C4 C3, C5 C7 R1 Description 22 F, 35 V Tantalum Capacitors 10 pF, 500 V Chip Capacitors 10 pF, 500 V Chip Capacitor 0.6-4.5 pF, 500 V Variable Capacitor 1 kW Chip Resistor Part Number T491X226K035AS 100B100JCA500X 600S100JW 27271SL CRCW12061021F100 Manufacturer Kemet ATC ATC Johanson Dale
VGG
C1 C2 R1 C4
VDD
C6
C5 C3 C7
MW4IC001MR4 2.17 GHz Rev 3
Figure 16. MW4IC001MR4 2.17 GHz Test Circuit Component Layout
MW4IC001MR4 8
MOTOROLA RF DEVICE DATA
, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
IRL VDD = 28 Vdc Pout = 0.9 W (PEP) IDQ = 12 mA Two Tone Measurement, 100 kHz Tone Spacing
27
-18
22
-23
17
IMD Gps
-28
12 2110
2120
2130
2140
2150
2160
-33 2170
f, FREQUENCY (MHz)
Figure 17. Two-Tone Performance versus Frequency
13.8 13.4 G ps , POWER GAIN (dB) 13.0 12.6 12.2 11.8 11.4 P1dB VDD = 28 Vdc IDQ = 12mA f = 2170 MHz Gps 60 50 40 30 20 10 , DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) -20 -25 -30 -35 -40 -45 -50 16 mA
VDD = 28 Vdc f1 = 2170 MHz, f2 = 2170.1 MHz Two Tone Measurement 100 kHz Tone Spacing IDQ = 7.2 mA 20 mA
9.6 mA 0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 Pout, OUTPUT POWER (WATTS) PEP
12 mA 0.1 1
Pout, OUTPUT POWER (WATTS) AVG.
Figure 18. CW Performance versus Output Power
Figure 19. Intermodulation Distortion versus Output Power
IMD,THIRD ORDER INTERMODULATION (dBc)
-20 IMD, INTERMODULATION DISTORTION (dBc) -25 -30 -35 -40 -45 -50 -55 -60 -65 -70
-20 -25 -30 -35 VDD = 28 Vdc IDQ = 12 mA f1 = 2170 MHz f2 = f1 + Tone Spacing Two-Tone Measurement
VDD = 28 Vdc, IDQ = 12 mA, f1 = 2170 MHz, f2 = 2170.1 MHz Two Tone Measurement, 100 kHz Tone Spacing 3rd Order
5th Order
1 MHz
10 MHz
7th Order 0.01 0.1 Pout, OUTPUT POWER (WATTS) AVG. 1
-40 -45 0.01 100 kHz 0.1 Pout, OUTPUT POWER (WATTS) AVG. 1
Figure 20. Intermodulation Distortion Products versus Output Power
Figure 21. Third Order Intermodulation Distortion versus Output Power
MOTOROLA RF DEVICE DATA
IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc)
32
-13
MW4IC001MR4 9
VDD = 28 V, IDQ = 14 mA, Pout = 0.9 W PEP f MHz 860 865 870 875 880 885 890 895 900 Zsource 27.853 + j5.908 28.617 + j6.078 29.458 + j6.285 30.306 + j6.422 31.223 + j6.567 32.194 + j6.660 33.228 + j6.656 34.293 + j6.624 35.424 + j6.508 Zload 15.492 + j63.669 15.592 + j68.687 15.788 + j69.799 15.835 + j70.863 15.975 + j71.920 16.094 + j73.091 16.286 + j74.159 16.344 + j75.236 16.628 + j76.283
VDD = 28 V, IDQ = 12 mA, Pout = 0.9 W PEP f MHz 1920 1930 1940 1950 1960 1970 1980 1990 2000 Zsource 4.238 + j15.142 4.322 + j15.362 4.490 + j15.466 4.605 + j15.711 4.752 + j15.904 4.905 + j16.050 5.071 + j16.236 5.262 + j16.446 5.487 + j16.632 Zload 7.764 + j28.829 8.056 + j29.352 8.436 + j29.727 8.809 + j30.249 9.183 + j30.763 9.598 + j31.213 10.030 + j31.690 10.546 + j32.237 11.054 + j32.726 f MHz 2100 2110 2120 2130 2140 2150 2160 2170 2180
VDD = 28 V, IDQ = 12 mA, Pout = 0.9 W PEP Zsource 2.667 + j12.903 2.671 + j13.070 2.664 + j13.224 2.694 + j13.431 2.703 + j13.511 2.702 + j13.700 2.745 + j13.952 2.754 + j14.026 2.784 + j14.206 Zload 5.892 + j26.374 6.092 + j26.739 6.281 + j27.094 6.540 + j27.510 6.748 + j27.795 6.996 + j28.182 7.300 + j28.678 7.562 + j28.987 7.862 + j29.411
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network
Input Matching Network
Z
source
Z
load
Figure 22. Series Equivalent Source and Load Impedance
MW4IC001MR4 10
MOTOROLA RF DEVICE DATA
NOTES
MOTOROLA RF DEVICE DATA
MW4IC001MR4 11
PACKAGE DIMENSIONS
L R
2
C P
10_DRAFT ZONE X
U
S
ZONE V
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W, AND X. INCHES MIN MAX 0.255 0.265 0.225 0.235 0.065 0.072 0.130 0.150 0.021 0.026 0.026 0.044 0.050 0.070 0.045 0.063 0.160 0.180 0.273 0.285 0.245 0.255 0.230 0.240 0.000 0.008 0.055 0.063 0.200 0.210 0.006 0.012 0.006 0.012 0.000 0.021 0.000 0.010 0.000 0.010 MILLIMETERS MIN MAX 6.48 6.73 5.72 5.97 1.65 1.83 3.30 3.81 0.53 0.66 0.66 1.12 1.27 1.78 1.14 1.60 4.06 4.57 6.93 7.24 6.22 6.48 5.84 6.10 0.00 0.20 1.40 1.60 5.08 5.33 0.15 0.31 0.15 0.31 0.00 0.53 0.00 0.25 0.00 0.25
AF
3
4
NK
H
G
1
Q
0.89 (0.035) X 45 _ "5 _
Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola Inc. 2003 HOW TO REACH US: USA/EUROPE/LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors
MW4IC001MR4 12
EEE EEE
D B
E
CASE 466-02 ISSUE B PLD-1.5 PLASTIC
EEEE EEEE EEEE EEEE EEEE EEEE
J
STYLE 1: PIN 1. 2. 3. 4.
ZONE W
RESIN BLEED/FLASH ALLOWABLE
DRAIN GATE SOURCE SOURCE
DIM A B C D E F G H J K L N P Q R S U ZONE V ZONE W ZONE X
MOTOROLA RF DEVICE DATA
MW4IC001MR4/D

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