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Composite Transistors
NP0A547
Silicon NPN epitaxial planar transistor
Unit: mm
For high-speed switching
6
0.12+0.03 -0.02 5 4
0.800.05
* SSS-Mini type package, reduction of the mounting area and assembly cost by one half * Maximum package height (0.4 mm) contributes to develop thinner equipments
1.000.05
Features
1 2 1.000.05 3
0 to 0.02
(0.35) (0.35)
Display at No.1 lead
0.10
0.10
Basic Part Number of Element
* 2SC3707 x 2 elements
1: Base (Tr1) 2: Emitter (Tr1) 3: Base (Tr2)
0.37+0.03 -0.02
Absolute Maximum Ratings Ta = 25C
Parameter Tr1 Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Tr2 Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Overall Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC VCBO VCEO VEBO IC PT Tj Tstg Rating 10 7 2 10 10 7 2 10 50 125 -55 to +125 Unit V V V mA V V V mA mW C C
4: Collector (Tr2) 5: Emitter (Tr2) 6: Collector (Tr1) SSSMini6-F1 Package
Marking Symbol: 1R Internal Connection
6
Tr1
5
4
Tr2
1
2
3
Note) *: Measuring on substrate at 17 mm x 10 mm x 1 mm
(0.10)
Publication date: June 2002
SJJ00256AED
1
NP0A547
Electrical Characteristics Ta = 25C 3C
* Tr1
Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Gain bandwidth product Collector output capacitance Forward transfer gain Power gain Noise figure Symbol ICBO IEBO hFE fT Cob S21e 2 GUM NF Rating VCB = 10 V, IE = 0 VEB = 1.5 V, IC = 0 VCE = 1 V, IC = 1 mA VCE = 1 V, IC = 1 mA, f = 0.8 GHz VCB = 1 V, IE = 0, f = 1 MHz VCE = 1 V, IC = 1 mA, f = 0.8 GHz VCE = 1 V, IC = 1 mA, f = 0.8 GHz VCE = 1 V, IC = 1 mA, f = 0.8 GHz 100 4 0.4 6.0 15 3.5 Unit 1 1 200 GHz pF dB dB dB A A
* Tr2
Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Gain bandwidth product Collector output capacitance Forward transfer gain Power gain Noise figure Symbol ICBO IEBO hFE fT Cob S21e2 GUM NF Rating VCB = 10 V, IE = 0 VEB = 1.5 V, IC = 0 VCE = 1 V, IC = 1 mA VCE = 1 V, IC = 1 mA, f = 0.8 GHz VCB = 1 V, IE = 0, f = 1 MHz VCE = 1 V, IC = 1 mA, f = 0.8 GHz VCE = 1 V, IC = 1 mA, f = 0.8 GHz VCE = 1 V, IC = 1 mA, f = 0.8 GHz 80 4 0.4 6.0 15 3.5 Unit 1 1 200 GHz pF dB dB dB A A
2
SJJ00256AED
NP0A547
PC Ta
100
6 IB = 50 A 5
IC VCE
Ta = 25C 45 A 35 A 30 A 25 A 20 A 2 15 A 10 A 1 5 A 60
IC VBE
VCE = 1 V
Collector power dissipation PC (mW)
50
Collector current IC (mA)
75
4
Collector current IC (mA)
40 A
40 25C 30 Ta = 75C -25C
50
3
20
25
10
0
0
0
40
80
120
160
0
0.4
0.8
1.2
1.6
2.0
2.4
0
0
0.4
0.8
1.2
1.6
2.0
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Base to emitter voltage VBE (V)
VCE(sat) IC
Collector to emitter saturation voltage VCE(sat) (V)
100 30 10 3 1 Ta = 75C 0.3 0.1 0.03 0.01 0.1 0 0.1 25C -25C IC / IB = 10 240
hFE IC
VCE = 1 V 12
fT I C
VCE = 1 V f = 800 MHz Ta = 25C
Forward current transfer ratio hFE
160 Ta = 75C 120 25C 80 -25C 40
Transition frequency fT (GHz)
10 30 100
200
10
8
6
4
2
0.3
1
3
10
30
100
0.3
1
3
0 0.1
0.3
1
3
10
30
100
Collector current IC (mA)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
1.2
GUM IC
Maximum unilateral power gain GUM (dB)
IE = 0 f = 1 MHz Ta = 25C 24 VCE = 1 V f = 800 MHz Ta = 25C 6
NF IC
VCE = 1 V (Rg = 50 ) f = 800 MHz Ta = 25C
Collector output capacitance Cob (pF)
1.0
20
5
0.8
16
Noise figure NF (dB)
0.3 1 3 10 30 100
4
0.6
12
3
0.4
8
2
0.2
4
1
0 0.1
0.3
1
3
10
30
100
0 0.1
0 0.1
0.3
1
3
10
30
100
Collector to base voltage VCB (V)
Collector current IC (mA)
Collector current IC (mA)
SJJ00256AED
3
Request for your special attention and precautions in using the technical information and semiconductors described in this book
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this book and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this book is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this book. (4) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 MAY

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