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MILITARY DATA SHEET MNLM139-X REV 0A0
Original Creation Date: 09/13/95 Last Update Date: 06/28/96 Last Major Revision Date: 09/13/95
LOW POWER LOW OFFSET VOLTAGE QUAD COMPARATORS
General Description
The LM139 consists of four independent precision voltage comparators. These were designed specifically to operate from a single power supply over a wide range of voltages. Operation from split power supplies is also possible and the low power supply current drain is independent of the magnitude of the power supply voltage. These comparators also have a unique characteristic in that the input common-mode voltage range includes ground, even though operated from a single power supply voltage. Application areas include limit comparators, simple analog to digital converters; pulse, squarewave and the time delay generators; wide range VCO; MOS clock timers; multivibrators and high voltage digital logic gates. The LM139 was designed to directly interface with TTL and CMOS. When operated from both plus and minus power supplies, they will directly interface with MOS logic-where the low power drain of the LM139 is a distinct advantage over standard comparators.
Industry Part Number
LM139
NS Part Numbers
LM139E/883 LM139F-MLS LM139J/883 LM139W-MLS LM139W/883 LM139WG/883
Prime Die
LM139F
Processing
MIL-STD-883, Method 5004
Subgrp Description
1 2 3 4 5 6 7 8A 8B 9 10 11 Static tests at Static tests at Static tests at Dynamic tests at Dynamic tests at Dynamic tests at Functional tests at Functional tests at Functional tests at Switching tests at Switching tests at Switching tests at
Temp ( oC)
+25 +125 -55 +25 +125 -55 +25 +125 -55 +25 +125 -55
Quality Conformance Inspection
MIL-STD-883, Method 5005
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MNLM139-X REV 0A0
MILITARY DATA SHEET
Features
- Wide supply voltage range 2Vdc to 36Vdc or +1Vdc to +18Vdc - Very low supply current drain (0.8mA) - independent of supply voltage - Low input biasing current 25nA - Low input offset current +5nA and offset voltage +3mV - Input common-mode voltage range includes GND - Differential input voltage range equal to the power supply voltage - Low output saturation voltage 250mV at 4mA - Output voltage compatible with TTL, DTL, ECL, MOS and CMOS logic systems
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MILITARY DATA SHEET
(Absolute Maximum Ratings)
(Note 1) Supply Voltage, V+ 36 Vdc or + 18 Vdc Differential Input Voltage (Note 5) 36 Vdc Input Voltage -0.3 Vdc to +36 Vdc Input Current (Vin < -0.3 Vdc) (Note 6) 50mA Power Dissipation (Note 2, 3) LCC CERDIP CERPACK CERAMIC S.O.I.C. Output Short-Circuit to GND (Note 4) Maximum Junction Temperature 150 C Storage Temperature Range -65 C to +150 C Lead Temperature (Soldering, 10 seconds) 260 C Operating Temperature Range -55 C to +125 C Thermal Resistance ThetaJA LCC
1250mW 1200mW 680mW 680mW
Continuous
(Still Air) (500LF/Min Air CERDIP (Still Air) (500LF/Min Air CERPACK (Still Air) (500LF/Min Air CERAMIC S.O.I.C. (Still Air) (500LF/Min Air ThetaJC LCC CERDIP CERPACK CERAMIC S.O.I.C. ESD Tolerance (Note 7)
flow) flow) flow) flow)
100 73 103 65 183 120 183 120 28 23 23 23
C/W C/W C/W C/W C/W C/W C/W C/W C/W C/W C/W C/W
600V Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed. Some performance characteristics may degrade Maximum power dissipation must be derated at elevated temperatures and is dictated by Tjmax (maximum junction temperature), ThetaJA (package junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is Pdmax = (Tjmax - TA)/ThetaJA or the number given in the Absolute Maximum Ratings, whichever is lower. The low bias dissipation and the ON-OFF characteristic of the outputs keeps the chip dissipation very small (Pd < 100mW), provided the output transistors are allowed to saturate. Short circuits from the output to V+ can cause excessive heating and eventual destruction. When considering short to ground, the maximum output current is approximately 20mA independent of the magnitude of V+.
Note 2:
Note 3: Note 4:
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MILITARY DATA SHEET
(Continued)
Note 5: Positive excursions of input voltage may exceed the power supply level. As long as the other voltage remains witin the common-mode range, the comparator will provide a proper output state. The low input voltge state must not be less than -3.0 Vdc (or 0.3 Vdc below the magnitude of the negative power supply, if used) (at 25 C). This input current will only exist when the voltage at any of the input leads is driven negative. It is due to the collector-base junction of the input PNP transistors becoming forward biased and therby acting as input diode clamps. In addition to the diode action, there is also lateral NPN parasitic transistor action on the IC chip. This transistor action can cause the output voltages of the comparators to go to the V+ voltage level (or to ground for a large overdrive) for the time duration that an input is driven negative. This is not destructive and normal output states will re-establish when the input voltage, which was negative, again returns to a value greater than -0.3 Vdc (at 25 C). Human body model, 1.5K Ohms in series with 100pF.
Note 6:
Note 7:
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MILITARY DATA SHEET
Electrical Characteristics
DC PARAMETERS
(The following conditions apply to all the following parameters, unless otherwise specified.) DC: V+ = 5V, Vcm = 0 SYMBOL Icc PARAMETER Supply Current Rl = Infinity V+ = 30V, Rl = Infinity Vio Input Offset Voltage V+ = 30V -5 -9 V+ = 30V, Vcm = 28.5V V+ = 30V, Vcm = 28.0V -5 -9 -5 -9 CMRR PSRR +Ibias Common Mode Rejection Ratio Power Supply Rejection Ratio Input Bias Current Input Bias Current Input Offset Current Output Leakage Current Output Sink Current Saturation Voltage Voltage Gain Common Mode Voltage Range V+ = 30V, Vcm = 0V to 28.5V V+ = 5V to 30V Vo = 1.5V 60 60 -100 -300 -Ibias Vo = 1.5V -100 -300 Iio Vo = 1.5V -25 -100 Icex Isink Vsat V+ = 30V, Vo = 30V Vo = 1.5V Isink = 4mA 6 400 700 Av Vcm V+ = 15V, Rl > 15K Ohms, Vin = 1V to 11V V+ = 30V 1 1 Vdiff Differential Input Voltage V+ = 30V, Vdiff = 36V 2 50 0 0 V+ 1.5 V+ 2.0 500 -1 -1 -1 -1 25 100 1 CONDITIONS NOTES PINNAME MIN 2 2 5 9 5 9 5 9 MAX UNIT mA mA mV mV mV mV mV mV dB dB nA nA nA nA nA nA uA mA mV mV SUBGROUPS 1, 2, 3 1, 2, 3 1 2, 3 1 2, 3 1 2, 3 1 1 1 2, 3 1 2, 3 1 2, 3 1, 2, 3 1 1 2, 3
V/mV 1 V V nA 1 2, 3 1, 2, 3
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MILITARY DATA SHEET
Electrical Characteristics
AC PARAMETERS
(The following conditions apply to all the following parameters, unless otherwise specified.) AC: V+ = 5V SYMBOL tRLH PARAMETER Response Time Vod = 5mV Vod = 50mV tRHL Response Time Vod = 5mV Vod = 50mV Note 1: Note 2: CONDITIONS NOTES PINNAME MIN 5 .8 2.5 .8 MAX UNIT uS uS uS uS SUBGROUPS 9 9 9 9
Parameter guaranteed by Vio tests. Vdiff is measured by applying +36V/-36V, with reference to gnd, to the two inputs.
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MILITARY DATA SHEET
Graphics and Diagrams
GRAPHICS# E20ARE J14ARH W14BRN WG14ARB DESCRIPTION LDLESS CHIP CARRIER, TYPE C 20 TERMINAL(P/P DWG) CERDIP (J), 14 LEAD (P/P DWG) CERPAC (W), 14 LEAD (P/P DWG) CERAMIC SOIC (WG), 14LD (P/P DWG)
See attached graphics following this page.
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