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1N6267A Series
1500 Watt MOSORB Zener Transient Voltage Suppressors
Unidirectional and Bidirectional
GENERAL DATA IS APPLICABLE TO ALL SERIES IN THIS GROUP
Mosorb devices are designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. These devices are ON Semiconductor's exclusive, cost-effective, highly reliable Surmetic axial leaded package and are ideally-suited for use in communication systems, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications, to protect CMOS, MOS and Bipolar integrated circuits.
Specification Features: http://onsemi.com
MOSORB ZENER TVS 6.2-250 VOLTS 1500 WATT PEAK POWER 5 WATTS STEADY STATE
* * * * * *
Standard Voltage Range -- 6.2 to 250 V Peak Power -- 1500 Watts @ 1 ms Maximum Clamp Voltage @ Peak Pulse Current Low Leakage < 5 A Above 10 V UL Recognition Response Time is Typically < 1 ns
PLASTIC CASE 41A
ORDERING INFORMATION
Device 1.5KEXXXA 1.5KEXXXARL4 Package CASE 41A CASE 41A Shipping 500 Units/Box Tape and Reel 1500 Units/Reel 500 Units/Box Tape and Reel 1500 Units/Reel 500 Units/Box Tape and Reel 1500 Units/Reel
Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are
readily solderable POLARITY: Cathode indicated by polarity band. When operated in zener mode, will be positive with respect to anode MOUNTING POSITION: Any WAFER FAB LOCATION: Phoenix, Arizona ASSEMBLY/TEST LOCATION: Guadalajara, Mexico
MAXIMUM RATINGS
Rating Peak Power Dissipation (1) @ TL 25C Steady State Power Dissipation @ TL 75C, Lead Length = 3/8 Derated above TL = 75C Forward Surge Current (2) @ TA = 25C Operating and Storage Temperature Range Symbol PPK PD Value 1500 5 50 IFSM TJ, Tstg 200 - 65 to +175 Unit Watts Watts mW/C Amps C
1.5KEXXXCA Bidirectional 1.5KEXXXCARL4 Bidirectional 1N6XXXA 1N6XXXARL
CASE 41A CASE 41A CASE 41A CASE 41A
Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value.
Lead temperature not less than 1/16 from the case for 10 seconds: 230C NOTES: 1. Nonrepetitive current pulse per Figure 5 and derated above TA = 25C per Figure 2. NOTES: 2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
(c) Semiconductor Components Industries, LLC, 1999
1
December, 1999 - Rev. 2
Publication Order Number: 1N6267A/D
1N6267A Series
*ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) VF# = 3.5 V Max, IF** = 100 A
Maximum Reverse Voltage @ IRSM Maximum (Clamping Temperature Voltage) Coefficient VRSM of VBR (Volts) (%/C)
Breakdown Voltage VBR{{ Volts Device 1.5KE6.8A 1.5KE7.5A 1.5KE8.2A 1.5KE9.1A 1.5KE10A 1.5KE11A 1.5KE12A 1.5KE13A 1.5KE15A 1.5KE16A 1.5KE18A 1.5KE20A Min Nom Max
JEDEC Device
@ IT (mA)
Working Peak Reverse Voltage VRWM*** (Volts)
Maximum Reverse Leakage @ VRWM IR (A)
Maximum Reverse Surge Current IRSM{ (Amps)
1N6267A 1N6268A 1N6269A 1N6270A
1N6271A 1N6272A 1N6273A 1N6274A
6.45 7.13 7.79 8.65
9.5 10.5 11.4 12.4
6.8 7.5 8.2 9.1
10 11 12 13
7.14 7.88 8.61 9.55
10.5 11.6 12.6 13.7
10 10 10 1
1 1 1 1
5.8 6.4 7.02 7.78
8.55 9.4 10.2 11.1
1000 500 200 50
10 5 5 5
143 132 124 112
103 96 90 82
10.5 11.3 12.1 13.4
14.5 15.6 16.7 18.2
0.057 0.061 0.065 0.068
0.073 0.075 0.078 0.081
1N6275A 1N6276A 1N6277A 1N6278A
1N6279A 1N6280A 1N6281A 1N6282A
14.3 15.2 17.1 19 20.9 22.8 25.7 28.5 31.4 34.2 37.1 40.9
44.7 48.5 53.2 58.9 64.6 71.3 77.9 86.5 95 105 114 124 143 152 162 171 190 209 237
15 16 18 20 22 24 27 30 33 36 39 43
47 51 56 62 68 75 82 91 100 110 120 130 150 160 170 180 200 220 250
15.8 16.8 18.9 21 23.1 25.2 28.4 31.5 34.7 37.8 41 45.2
49.4 53.6 58.8 65.1 71.4 78.8 86.1 95.5 105 116 126 137 158 168 179 189 210 231 263
1 1 1 1 1 1 1 1 1 1 1 1
1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1
12.8 13.6 15.3 17.1 18.8 20.5 23.1 25.6 28.2 30.8 33.3 36.8
40.2 43.6 47.8 53 58.1 64.1 70.1 77.8 85.5 94 102 111 128 136 145 154 171 185 214
5 5 5 5 5 5 5 5 5 5 5 5
5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5
71 67 59.5 54 49 45 40 36 33 30 28 25.3
23.2 21.4 19.5 17.7 16.3 14.6 13.3 12 11 9.9 9.1 8.4 7.2 6.8 6.4 6.1 5.5 4.6 5
21.2 22.5 25.2 27.7 30.6 33.2 37.5 41.4 45.7 49.9 53.9 59.3
64.8 70.1 77 85 92 103 113 125 137 152 165 179 207 219 234 246 274 328 344
0.084 0.086 0.088 0.09 0.092 0.094 0.096 0.097 0.098 0.099 0.1 0.101
0.101 0.102 0.103 0.104 0.104 0.105 0.105 0.106 0.106 0.107 0.107 0.107 0.108 0.108 0.108 0.108 0.108 0.109 0.109
1.5KE22A 1.5KE24A 1.5KE27A 1.5KE30A
1.5KE33A 1.5KE36A 1.5KE39A 1.5KE43A 1.5KE47A 1.5KE51A 1.5KE56A 1.5KE62A 1.5KE68A 1.5KE75A 1.5KE82A 1.5KE91A 1.5KE100A 1.5KE110A 1.5KE120A 1.5KE130A 1.5KE150A 1.5KE160A 1.5KE170A 1.5KE180A 1.5KE200A 1.5KE220A 1.5KE250A
1N6283A 1N6284A 1N6285A 1N6286A
1N6287A 1N6288A 1N6289 1N6290A 1N6291A 1N6292A 1N6293A 1N6294A 1N6295A 1N6296A 1N6297A 1N6298A 1N6299A 1N6300A 1N6301A 1N6302A 1N6303A
*** Indicates JEDEC registered data. *** 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum. *** A transient suppressor is normally selected according to the maximum reverse stand-off voltage (VRWM), which should be equal to or greater than the dc or continuous peak operating *** voltage level. { { Surge current waveform per Figure 5 and derate per Figure 2 of the General Data -- 1500 W at the beginning of this group. { { VBR measured at pulse test current IT at an ambient temperature of 25C. # VF applies to Non-CA suffix devices only.
FOR BIDIRECTIONAL APPLICATIONS -- USE CA SUFFIX ON 1.5KE SERIES for 1.5KE6.8CA through 1.5KE250CA. Electrical characteristics apply in both directions.
Preferred Bidirectional Devices -- 1.5KE10CA 1.5KE12CA 1.5KE18CA 1.5KE36CA
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1N6267A Series
100 PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT @ TA= 25 C NONREPETITIVE PULSE WAVEFORM SHOWN IN FIGURE 5 PP , PEAK POWER (kW)
100 80 60 40 20 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (C)
10
1 s 0.1
1 s
10 s
100 s
1 ms
10 ms
tP, PULSE WIDTH
Figure 1. Pulse Rating Curve
Figure 2. Pulse Derating Curve
1N6373, ICTE-5, MPTE-5, through 1N6389, ICTE-45, C, MPTE-45, C
10,000 MEASURED @ ZERO BIAS 10,000
1N6267A/1.5KE6.8A through 1N6303A/1.5KE200A
MEASURED @ ZERO BIAS C, CAPACITANCE (pF) 1000 MEASURED @ STAND-OFF VOLTAGE (VR)
C, CAPACITANCE (pF)
1000
MEASURED @ STAND-OFF VOLTAGE (VR)
100
100
10 1 10 100 1000 BV, BREAKDOWN VOLTAGE (VOLTS)
10 1 10 100 1000 BV, BREAKDOWN VOLTAGE (VOLTS)
Figure 3. Capacitance versus Breakdown Voltage
PD , STEADY STATE POWER DISSIPATION (WATTS)
3/8 5 4 3 2 1 0 0 25 50 75 100 125 150 175 TL, LEAD TEMPERATURE (C) 200 0 0 3/8 VALUE (%) 100
tr PEAK VALUE -- IRSM
PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO 50% OF IRSM. tr 3 10 s IRSM 2
HALF VALUE - 50 tP
1
2 t, TIME (ms)
3
4
Figure 4. Steady State Power Derating
Figure 5. Pulse Waveform
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1N6267A Series
1N6373, ICTE-5, MPTE-5, through 1N6389, ICTE-45, C, MPTE-45, C
1000 500 I Z, ZENER CURRENT (AMPS) 200 100 50 20 10 5 2 1 0.3 0.5 0.7 1 2 3 5 7 10 20 30 VZ, INSTANTANEOUS INCREASE IN VZ ABOVE VZ(NOM) (VOLTS) TL = 25C tP = 10 s VZ(NOM) = 6.8 to 13 V 20 V 43 V 24 V 1000 500 I Z, ZENER CURRENT (AMPS) 200 100 50 20 10 5 2 1 0.3 0.5 0.7 1 2 3 5 7 10 20 30 VZ, INSTANTANEOUS INCREASE IN VZ ABOVE VZ(NOM) (VOLTS) 180 V 120 V TL = 25C tP = 10 s
1N6267A/1.5KE6.8A through 1N6303A/1.5KE200A
VZ(NOM) = 6.8 to 13 V 20 V 24 V 43 V 75 V
Figure 6. Dynamic Impedance
1 0.7 0.5 0.3 DERATING FACTOR 0.2 0.1 0.07 0.05 0.03 0.02 10 s 0.01 0.1 0.2 0.5 1 2 5 10 D, DUTY CYCLE (%) 20 50 100 PULSE WIDTH 10 ms
1 ms 100 s
Figure 7. Typical Derating Factor for Duty Cycle
APPLICATION NOTES
RESPONSE TIME
In most applications, the transient suppressor device is placed in parallel with the equipment or component to be protected. In this situation, there is a time delay associated with the capacitance of the device and an overshoot condition associated with the inductance of the device and the inductance of the connection method. The capacitance effect is of minor importance in the parallel protection scheme because it only produces a time delay in the transition from the operating voltage to the clamp voltage as shown in Figure A. The inductive effects in the device are due to actual turn-on time (time required for the device to go from zero current to full current) and lead inductance. This inductive effect produces an overshoot in the voltage across the equipment or component being protected as shown in Figure B. Minimizing this overshoot is very important in the
application, since the main purpose for adding a transient suppressor is to clamp voltage spikes. These devices have excellent response time, typically in the picosecond range and negligible inductance. However, external inductive effects could produce unacceptable overshoot. Proper circuit layout, minimum lead lengths and placing the suppressor device as close as possible to the equipment or components to be protected will minimize this overshoot. Some input impedance represented by Zin is essential to prevent overstress of the protection device. This impedance should be as high as possible, without restricting the circuit operation.
DUTY CYCLE DERATING
The data of Figure 1 applies for non-repetitive conditions and at a lead temperature of 25C. If the duty cycle increases, the peak power must be reduced as indicated by the curves of Figure 7. Average power must be derated as the lead or
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1N6267A Series
ambient temperature rises above 25C. The average power derating curve normally given on data sheets may be normalized and used for this purpose. At first glance the derating curves of Figure 7 appear to be in error as the 10 ms pulse has a higher derating factor than the 10 s pulse. However, when the derating factor for a given pulse of Figure 7 is multiplied by the peak power value of Figure 1 for the same pulse, the results follow the expected trend.
TYPICAL PROTECTION CIRCUIT
Zin
Vin
LOAD
VL
V
Vin (TRANSIENT) VL
V
OVERSHOOT DUE TO INDUCTIVE EFFECTS
Vin (TRANSIENT) VL
Vin td
tD = TIME DELAY DUE TO CAPACITIVE EFFECT t
t
Figure 8.
Figure 9.
UL RECOGNITION* The entire series has Underwriters Laboratory Recognition for the classification of protectors (QVGV2) under the UL standard for safety 497B and File #116110. Many competitors only have one or two devices recognized or have recognition in a non-protective category. Some competitors have no recognition at all. With the UL497B recognition, our parts successfully passed several tests including Strike Voltage Breakdown test, Endurance Conditioning, Temperature test, Dielectric Voltage-Withstand test, Discharge test and several more. Whereas, some competitors have only passed a flammability test for the package material, we have been recognized for much more to be included in their Protector category.
*Applies to 1.5KE6.8A, CA thru 1.5KE250A, CA
CLIPPER BIDIRECTIONAL DEVICES 1. Clipper-bidirectional devices are available in the 1.5KEXXA series and are designated with a "CA" suffix; for example, 1.5KE18CA. Contact your nearest Motorola representative. 2. Clipper-bidirectional part numbers are tested in both directions to electrical parameters in preceeding table (except for VF which does not apply). 3. The 1N6267A through 1N6303A series are JEDEC registered devices and the registration does not include a "CA" suffix. To order clipper-bidirectional devices one must add CA to the 1.5KE device title.
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1N6267A Series
OUTLINE DIMENSIONS
Transient Voltage Suppressors -- Axial Leaded
1500 Watt Peak Power
B D K
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. LEAD FINISH AND DIAMETER UNCONTROLLED IN DIM P. DIM A B D K P INCHES MIN MAX 0.360 0.375 0.190 0.205 0.038 0.042 1.000 -- -- 0.050 MILLIMETERS MIN MAX 9.14 9.52 4.83 5.21 0.97 1.07 25.40 -- -- 1.27
P P
A
K
CASE 41A-02 PLASTIC
(Refer to Section 10 of the TVS/Zener Data Book (DL150/D) for Surface Mount, Thermal Data and Footprint Information.)
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1N6267A Series
Notes
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1N6267A Series
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
North America Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor - European Support German Phone: (+1) 303-308-7140 (M-F 2:30pm to 5:00pm Munich Time) Email: ONlit-german@hibbertco.com French Phone: (+1) 303-308-7141 (M-F 2:30pm to 5:00pm Toulouse Time) Email: ONlit-french@hibbertco.com English Phone: (+1) 303-308-7142 (M-F 1:30pm to 5:00pm UK Time) Email: ONlit@hibbertco.com ASIA/PACIFIC: LDC for ON Semiconductor - Asia Support Phone: 303-675-2121 (Tue-Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong 800-4422-3781 Email: ONlit-asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-8549 Phone: 81-3-5487-8345 Email: r14153@onsemi.com Fax Response Line: 303-675-2167 800-344-3810 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative.
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1N6267A/D

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