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APRIL 1997
BR1491/D
TSOP-6
SO-8 MICRO-8 TSOP-6
OPTOELECTRONIC & SIGNAL PRODUCTS DIVISION Small components. Big solutions.
5005 East McDowell Road S Phoenix, AZ 85008 http://sps.mot.com/ospd
Selector Guide
Maximum Ratings
RDS(on) (W) Part Number MGSF3454VT1 MGSF3454XT1 MGSF3455VT1 MGSF3455XT1 MGSF3442VT1 MGSF3442XT1 MGSF3441VT1 MGSF3441XT1 VDS ( ) (V) 30 30 30 30 20 20 20 20 VGS = 10 V 0.065 0.065 0.10 0.10 VGS = 4.5 V 0.095 0.095 0.19 0.19 0.07 0.07 0.10 0.10 0.095 0.095 0.135 0.135 VGS = 2.5 V IDS ( ) (A) 4.2 1.75 3.5 1.45 4.0 1.7 3.3 1.5 Configuration N-Channel N-Channel P-Channel P-Channel N-Channel N-Channel P-Channel P-Channel Available July 97 Now July 97 July 97 July 97 July 97 July 97 July 97
Table of Contents
INTRODUCTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 MGSF3441VT1 P-Channel Enhancement-Mode MOSFET . . . . . . . 7 MGSF3441XT1 P-Channel Enhancement-Mode MOSFET . . . . . . 11 MGSF3442VT1 N-Channel Enhancement-Mode MOSFET . . . . . 13 MGSF3442XT1 N-Channel Enhancement-Mode MOSFET . . . . . 17 MGSF3454VT1 N-Channel Enhancement-Mode MOSFET . . . . . 19 MGSF3454XT1 N-Channel Enhancement-Mode MOSFET . . . . . 23 MGSF3455VT1 P-Channel Enhancement-Mode MOSFET . . . . . . 27 MGSF3455XT1 P-Channel Enhancement-Mode MOSFET . . . . . . 31 TAPE AND REEL OPTIONS . . . . . . . . . . . . . . . . . . . 33
Optoelectronic & Signal Products Division Small components. Big solutions. Motorola 1
(c) Motorola Inc., 1997 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
Motorola 2
Optoelectronic & Signal Products Division Small components. Big solutions.
TSOP-6
Cellular telephones, notebook computers, and other portable electronic systems are becoming smaller with each new generation of products. The new TSOP-6 family anticipates this evolution. Its small size allows the placement of a MOSFET in spaces that have become too small for any other surface-mount power MOSFET package. With a power rating of 2.0 W, on-resistance as low as 0.065 W, and current ratings of up to 4.2 A, the new TSOP-6 (Figure 1) is a true power package, providing the kind of performance, on an even smaller scale, that designers have come to expect from TSOP-6.
A L
6 5 1 2 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. DIM A B C D G H J K L M S MILLIMETERS MIN MAX 2.90 3.10 1.30 1.70 0.90 1.10 0.25 0.50 0.85 1.05 0.013 0.100 0.10 0.26 0.20 0.60 1.25 1.55 0_ 10 _ 2.50 3.00 INCHES MIN MAX 0.1142 0.1220 0.0512 0.0669 0.0354 0.0433 0.0098 0.0197 0.0335 0.0413 0.0005 0.0040 0.0040 0.0102 0.0079 0.0236 0.0493 0.0610 0_ 10 _ 0.0985 0.1181
S
3
B
D G M 0.05 (0.002) H C K J
Figure 1. TSOP-6 Outline Drawing Not only is the TSOP-6 small, it's also a JEDEC registered package. It has the same footprint as the SC-59, but with a lower profile and higher power rating (up to 2.0 W). As further assurance that the TSOP-6 will be established as the industry standard for low-voltage applications with limited circuit board space, these devices are being second-sourced by TEMIC Semiconductor. For these TSOP-6 devices, TEMIC Semiconductor and Motorola have agreed on compatible pin-outs, power ratings, and package outlines and dimensions.
Optoelectronic & Signal Products Division Small components. Big solutions.
Motorola 3
New Branch of a Great Family
When the first true surface-mount power MOSFETs were created in the SO-8 family, two innovations were involved, 1) a lower on-resistance power MOSFET technology, 2) modified standard surface- mount SOIC package. The lower on-resistance MOSFET reduced the power dissipation per unit of current, while the innovative packaging provided a path for heat to escape, allowing high currents to be switched in a package that is much smaller and easier to assemble. The introduction of smaller MOSFETs in the SO-8 inevitably raised the expectations of the market as regards surface-mounted power MOSFETs, resulting in a demand for devices with greater capabilities in even smaller packages. In 1994, the size of the smallest available power MOSFET was halved with the introduction of the MICRO-8. This introduction answered the demand of the market for smaller size and greater capabilities with even smaller devices that provide the current handling available until now only in the MICRO-8, SO-8 and other larger packages.
TSOP-6
MICRO-8
SO-8
TSOP-6
MICRO-8
SO-8
Figure 2. Family Package Evolution The TSOP-6 is a 6-leaded, 1 mm thick package with a total height of 1.1 mm. The package and leads occupy an area of 2.75 X 3.10 mm. To put this in perspective, Figure 2 gives a visual comparison by overlaying the package outlines of the TSOP-6, the MICRO-8 and the SO-8 packages. The TSOP-6 measures 2.75 mm in width, including the leads, less than half as wide as the SO-8. Table 1 gives a comparison of the dimensions of these packages.
Motorola 4
Optoelectronic & Signal Products Division Small components. Big solutions.
Table 1. Comparison of Dimensions TSOP-6
Millimeters Dim Height Lead Width Package Length Package Width Width of Foot Print Lead Pitch Min -- 0.25 2.90 1.30 Max 1.10 0.50 3.10 1.70 Inches Min -- 0.010 0.114 0.051 Max 0.043 0.020 0.122 0.067 Min 1.05 0.25 2.90 4.30 6.20
MICRO-8
Millimeters Max 1.20 0.30 3.10 4.50 6.60 Inches Min 0.041 0.010 0.114 0.170 0.244 Max 0.047 0.012 0.122 0.177 0.260 Min 1.35 0.35 4.69 3.50 5.70
SOIC-8
Millimeters Max 1.75 0.45 5.00 4.05 6.30 Inches Min 0.053 0.014 0.185 0.140 0.224 Max 0.069 0.018 0.196 0.160 0.248
2.75BSC 1.00BSC
0.0108BSC 0.039BSC
0.065BSC
0.025BSC
1.27BSC
0.050BSC
Thermal Capabilities
The same copper lead frame innovations introduced in the SO-8 have been used in the TSOP-6 to dissipate heat. The TSOP-6 lead frame is shown in Figure 3. As in the SO-8 and MICRO-8 packages, the thermal path runs from the die, through the die attach, into the copper lead frame, and out the drain leads (Figure 4). The drain lead accounts for the largest portion of the thermal impedance due to the small cross sectional area of the leads. The small size of the package helps to keep the length of the drain leads short. The short lead length, in combination with the use of four drain leads, keeps the thermal impedance low for this size package.
48 MILS
78 MILS
Figure 3. TSOP-6 Lead Frame
Figure 4. Thermal Path
The thermal rating (as provided on data sheets for surface-mount MOSFETs) is measured with the part mounted on a one-inch square piece of 0.062 inch thick FR4 PC board. This choice of test board is neither a "worst-case" or "best-case" layout. It represents a compromise between single-layer and multilayer boards, with more copper on its single side than the average single-layer construction. Thus, it can serve as an approximation of multilayer boards with center power planes and far less surface copper. The junction is heated by a known amount of power for a known amount of time. The junction temperature is measured immediately after heating using the temperature coefficient of the forward voltage of the internal diode. This procedure is repeated from a time of 5 ms out to several hundred seconds. This series of measurements and measurement of the ambient temperature provides RqJA, the single pulse power curve, and provides the data required to generate the transient thermal impedance curves from junction to ambient.
Optoelectronic & Signal Products Division Small components. Big solutions.
Motorola 5
Two Versions: 0.95 W and 2.0 W
Each TSOP-6 device is available in two versions with different thermal ratings. The rating is dependent on the lead frame material used. The parts with the "V" suffix are built with a copper leadframe which gives the best thermal performance. The parts with the "X" suffix have a copper plated Alloy 42 leadframe. Although the "X" series devices are rated with the same electrical resistance as the "V" series devices, they are specified at a reduced current level to compensate for their increased thermal impedance. The first thermal performance parameter that is normally seen is RqJA. This parameter gives a means of comparing the package capability before the PC board starts to have a significant effect. For the TSOP-6, the board is considered to dominate after 5 seconds. RqJA for the TSOP-6 is 62.5C/W for the "V" parts and 132C/W for the "X" parts. The "V" parts, which have the copper lead frame compare very favorably with 50C/W for the single-die SO-8, 62.5C/W for the dual-die SO-8. A comparison of the single-pulse power curves (Figure 5) reveals the difference in the thermal mass of the TSOP-6 and the SO-8 die and lead frames, and therefore, in ability of these two packages to handle surge currents. The single-pulse power curve shows the amount of power it takes for a single pulse of fixed duration to raise the junction temperature from room temperature to 150C. If extended below 10 ms, the curves would become asymptotic and converge, reflecting the limitations of the die alone. The opposite end of the curve reflects the limitations of the PC mass of the TSOP-6 results in a significant but reduced capability in pulse duration, amounting to less than 5 seconds. It should be noted that the TSOP-6 can dissipate a 20-W pulse of 10-ms duration.
20
16
POWER (W)
12 SO-8 8.0 TSOP-6 4.0 0 0.01 0.1 1.0 TIME (sec) 10
Figure 5. Single Pulse Power The combination of very low on-resistance power MOSFET technology, and a thermally efficient copper leadframe in the new TSOP-6 package creates a new standard for performance per footprint. For applications requiring very low on-resistance, at less current, the Alloy 42-leadframes offer manufacturing advantages that make them even more economical.
Motorola 6
Optoelectronic & Signal Products Division Small components. Big solutions.
NEW PRODUCT
MGSF3441VT1
P-Channel Enhancement-Mode MOSFET
Product Summary
VDS (V) - 20 RDS(on) (W) 0.10 @ VGS = - 4.5 V 0.135 @ VGS = - 2.5 V ID (A) 3.3 2.9
2.5-V Rated
TSOP-6 TOP VIEW 1 3 mm 2 3 6 5 4
(4) S
(3) G
Power Dissipation MGSF3441VT1 - 2.0 W
(1, 2, 5, 6) D
2.75 mm
P-CHANNEL MOSFET
Absolute Maximum Ratings (TA = 25C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150C) (1) TA = 25C TA = 70C Pulsed Drain Current Continuous Source Current (Diode Conduction) (1) Maximum Power Dissipation (1) TA = 25C TA = 70C Operating Junction and Storage Temperature Range TJ, Tstg IDM IS PD Symbol VDS VGS ID Limit -20 8.0 3.3 2.6 20 - 1.6 2.0 1.28 - 55 to 150 C W A Unit V
Thermal Resistance Ratings
Parameter Maximum Junction-to-Ambient (1) 1. Surface Mounted on FR4 Board, t 5 sec. Symbol RqJA Limit 62.5 Unit C/W
Optoelectronic & Signal Products Division Small components. Big solutions.
Motorola 7
MGSF3441VT1
NEW PRODUCT
Specifications (TJ = 25C unless otherwise noted)
Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current VGS(th) IGSS IDSS VDS = VGS, ID = 250 mA VDS = 0 V, VGS = 8.0 V VDS = -20 V, VGS = 0 V VDS = -20 V, VGS = 0 V, TJ = 70C On-State Drain Current (1) ID(on) () VDS = - 5.0 V, VGS = - 4.5 V VDS = - 5.0 V, VGS = -2.5 V Drain Source On-State Resistance (1) RDS(on) () VGS = - 4.5 V, ID = 3.3 A VGS = -2.5 V, ID = 2.9 A Forward Transconductance (1) Diode Forward Voltage (1) Dynamic (2) Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = -1.6 A, di/dt = 100 A/ms ID VDD = -10 V, RL = 10 W 10 V, VDS = -10 V, VGS = - 4.5 V, ID = - 3.3 A 10 V 45V 33 8.6 1.5 3.1 27 50 30 80 70 80 ns 14 nC gFS VSD VDS = -10 V, ID = - 3.3 A IS = -1.6 A, VGS = 0 V -10 - 4.0 0.078 0.110 8.8 0.8 -1.2 0.10 0.135 S V - 0.45 100 -1.0 - 5.0 A V nA Symbol Test Condition Min Typ Max Unit
mA
W
^ -1.6 A, VGEN = - 4.5 V, RG = 6.0 W
17 52 45 50
1. Pulse test; pulse width 300 ms, duty cycle 2%. 2. Guaranteed by design, not subject to production testing.
Motorola 8
Optoelectronic & Signal Products Division Small components. Big solutions.
NEW PRODUCT
MGSF3441VT1
TYPICAL CHARACTERISTICS (25C unless otherwise noted)
20 VGS = 4.5 V 16 ID, DRAIN CURRENT (A) ID , DRAIN CURRENT (A) 3.0 V 12 2.5 V 8.0 2.0 V 4.0 1.5 V 0 0 1.0 2.0 3.0 4.0 5.0 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 0 0 1.0 2.0 3.0 4.0 VGS, GATE-TO-SOURCE VOLTAGE (V) 20 TC = -55C 16 25C 12 125C
4.0 V 3.5 V
8.0
4.0
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
0.30 R DS(on) , ON-RESISTANCE ( W )
1400 1200
0.24 C, CAPACITANCE (pF) VGS = 2.5 V 0.18 1000 800 600 400 Coss 200 0 0 4.0 8.0 12 16 20 ID, DRAIN CURRENT (A) 0 0 4.0 8.0 12 16 20 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Crss Ciss
0.12
VGS = 4.5 V
0.06
Figure 3. On-Resistance versus Drain Current
Figure 4. Capacitance
4.0
VDS = 10 V ID = 3.3 A
R DS(on) , ON-RESISTANCE ( W) (NORMALIZED)
5.0 VGS , GATE-TO-SOURCE VOLTAGE (V)
1.8 1.6 1.4 1.2 1.0 0.8 0.6 -50 VGS = 4.5 V ID = 3.3 A
3.0
2.0
1.0 0 0 2.0 4.0 6.0 8.0 10 Qg, TOTAL GATE CHARGE (nC)
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (C)
Figure 5. Gate Charge
Figure 6. On-Resistance versus Junction Temperature
Optoelectronic & Signal Products Division Small components. Big solutions.
Motorola 9
MGSF3441VT1
NEW PRODUCT
TYPICAL CHARACTERISTICS (25C unless otherwise noted)
20 TJ = 150C R DS(on) , ON-RESISTANCE ( W ) IS , SOURCE CURRENT (A) 10 TJ = 25C 0.24 0.30 ID = 3.3 A
0.18
0.12
0.06 0
1.0 0 0.25 0.50 0.75 1.00 1.25 1.50 VSD, SOURCE-TO-DRAIN VOLTAGE (V)
0
2.0
4.0
6.0
8.0
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 7. Source-Drain Diode Forward Voltage
Figure 8. On-Resistance versus Gate-to-Source Voltage
0.4 0.3 V GS(th) , VARIANCE (V) 0.2 0.1 0 -0.1 -0.2 -50
20
16 POWER (W) 50 75 100 125
12
ID = 250 mA
8.0
4.0 0 -25 0 25 150 0.01 0.1 1.0 TIME (sec) 10 TJ, TEMPERATURE (C)
Figure 9. Threshold Voltage
Figure 10. Single Pulse Power
2.0 NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE 1.0 DUTY CYCLE = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.0001 0.001 0.01 0.1 1.0 10 30 t1 NOTES: PDM 1. DUTY CYCLE, D = t1/t2 2. PER UNIT BASE = 2. RthJA = 62.5C/W 3. TJM - TA = PDMZthJA(t) 4. SURFACE MOUNTED
SINGLE PULSE
t2
SQUARE WAVE PULSE DURATION (sec)
Figure 11. Normalized Thermal Transient Impedance, Junction-to-Ambient
Motorola 10
Optoelectronic & Signal Products Division Small components. Big solutions.
NEW PRODUCT
MGSF3441XT1
P-Channel Enhancement-Mode MOSFET
Product Summary
VDS (V) 20 RDS(on) (W) 0.100 @ VGS = 4.5 V 0.135 @ VGS = 2.5 V ID (A) 1.5 1.2
2.5-V Rated
TSOP-6 TOP VIEW 1 3 mm 2 3 6 5 4 3 GATE
1 2 5 6 DRAIN
Power Dissipation MGSF3441XT1 - 0.95 W
SOURCE 4 P-CHANNEL MOSFET
2.75 mm
Absolute Maximum Ratings (TJ = 25C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage -- Continuous Drain Current -- Continuous @ TA = 25C Drain Current -- Pulsed Drain Current (tp 10 ms) Total Power Dissipation @ TA = 25C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes, for 10 seconds Symbol VDSS VGS ID IDM PD TJ, Tstg TL Limit 20 8.0 1.5 20 950 - 55 to 150 260 A mW C C Unit Vdc
Thermal Resistance Ratings
Parameter Junction-to-Ambient (1) 1. Surface Mounted on FR4 Board, t 5 sec. Symbol RqJA Limit 132 Unit C/W
Optoelectronic & Signal Products Division Small components. Big solutions.
Motorola 11
MGSF3441XT1
NEW PRODUCT
Specifications (TJ = 25C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 A) Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 70C) Gate-Body Leakage Current (VGS = 8.0 Vdc, VDS = 0) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Static Drain-to-Source On-Resistance (VGS = 4.5 Vdc, ID = 1.5 A) (VGS = 2.5 Vdc, ID = 1.2 A) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge SOURCE-DRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage(2) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. IS ISM VSD -- -- -- -- -- 0.80 1.0 20 1.2 A A V ( (VDD = 15 Vd , ID = 1 0 A, Vdc, 1.0 A, VGEN = 10 V, RL = 10 ) td(on) tr td(off) tf QT -- -- -- -- -- 27 17 52 45 3000 50 30 80 70 -- pC ns (VDS = 5.0 V) (VDS = 5.0 V) (VDG = 5.0 V) Ciss Coss Crss -- -- -- 90 50 10 -- -- -- pF VGS(th) 0.45 RDS(on) -- -- 0.078 0.110 0.100 0.135 -- -- Ohms Vdc V(BR)DSS 20 IDSS -- -- IGSS -- -- -- -- 1.0 4.0 100 nAdc -- -- Adc Vdc Symbol Min Typ Max Unit
Motorola 12
Optoelectronic & Signal Products Division Small components. Big solutions.
NEW PRODUCT
MGSF3442VT1
N-Channel Enhancement-Mode MOSFET
Product Summary
VDS (V) 20 RDS(on) (W) 0.07 @ VGS = 4.5 V 0.095 @ VGS = 2.5 V ID (A) 4.0 3.4
2.5-V Rated
TSOP-6 TOP VIEW 1 3 mm 2 3 6 5 4 (3) G
(1, 2, 5, 6) D
Power Dissipation MGSF3442VT1 - 2.0 W
(4) S
2.75 mm
N-CHANNEL MOSFET
Absolute Maximum Ratings (TA = 25C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150C) (1) TA = 25C TA = 70C Pulsed Drain Current Continuous Source Current (Diode Conduction) (1) Maximum Power Dissipation (1) TA = 25C TA = 70C Operating Junction and Storage Temperature Range TJ, Tstg IDM IS PD Symbol VDS VGS ID Limit 20 8.0 4.0 3.1 20 1.6 2.0 1.28 - 55 to 150 C W A Unit V
Thermal Resistance Ratings
Parameter Maximum Junction-to-Ambient (1) 1. Surface Mounted on FR4 Board, t 5 sec. Symbol RqJA Limit 62.5 Unit C/W
Optoelectronic & Signal Products Division Small components. Big solutions.
Motorola 13
MGSF3442VT1
NEW PRODUCT
Specifications (TJ = 25C unless otherwise noted)
Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current VGS(th) IGSS IDSS VDS = VGS, ID = 250 mA VDS = 0 V, VGS = 8.0 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 70C On-State Drain Current (1) ID(on) () VDS = 5.0 V, VGS = 4.5 V VDS = 5.0 V, VGS = 2.5 V Drain-Source On-State Resistance (1) RDS(on) () VGS = 4.5 V, ID = 4.0 A VGS = 2.5 V, ID = 3.4 A Forward Transconductance (1) Diode Forward Voltage (1) Dynamic (2) Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 1.6 A, di/dt = 100 A/ms ID VDD = 10 V, RL = 10 W V, VDS = 10 V, VGS = 4.5 V, ID = 4.0 A V 45V 40 7.0 1.1 2.0 8.0 20 40 60 20 70 ns 10 nC gFS VSD VDS = 10 V, ID = 4.0 A IS = 1.6 A, VGS = 0 V 10 4.0 0.058 0.072 11.3 0.75 1.2 0.07 0.095 S V 0.6 100 1.0 5.0 A V nA Symbol Test Condition Min Typ Max Unit
mA
W
^ 1.0 A, VGEN = 4.5 V, RG = 6.0 W
24 35 10 40
1. Pulse test; pulse width 300 ms, duty cycle 2%. 2. Guaranteed by design, not subject to production testing.
Motorola 14
Optoelectronic & Signal Products Division Small components. Big solutions.
NEW PRODUCT
MGSF3442VT1
TYPICAL CHARACTERISTICS (25C unless otherwise noted)
20 VGS = 4.5 V 4.0 V 3.5 V 3.0 V 2.5 V 16 ID , DRAIN CURRENT (A) 20 TC = -55C 125C 25C
16 ID, DRAIN CURRENT (A)
12 2.0 V 8.0
12
8.0
4.0 1.5 V 0 0 1.0 2.0 3.0 4.0 5.0 VDS, DRAIN-TO-SOURCE VOLTAGE (V)
4.0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
0.14 R DS(on) , ON-RESISTANCE ( W) 0.12 VGS = 2.5 V C, CAPACITANCE (pF) 0.10 0.08 0.06 0.04 0.02 0 0 4.0 8.0 12 16 20 ID, DRAIN CURRENT (A)
1200 1000 800 600 400 200 0 0 4.0 8.0 12 16 20 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Ciss
VGS = 4.5 V
Coss Crss
Figure 3. On-Resistance versus Drain Current
Figure 4. Capacitance
R DS(on) , ON-RESISTANCE ( W) (NORMALIZED)
5.0 VGS , GATE-TO-SOURCE VOLTAGE (V) VDS = 10 V ID = 4.0 A
1.8 1.6 1.4 1.2 1.0 0.8 0.6 -50 VGS = 4.5 V ID = 4.0 A
4.0
3.0
2.0
1.0 0 0 2.0 4.0 6.0 8.0 Qg, TOTAL GATE CHARGE (nC)
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (C)
Figure 5. Gate Charge
Figure 6. On-Resistance versus Junction Temperature
Optoelectronic & Signal Products Division Small components. Big solutions.
Motorola 15
MGSF3442VT1
NEW PRODUCT
TYPICAL CHARACTERISTICS (25C unless otherwise noted)
20 TJ = 150C R DS(on) , ON-RESISTANCE ( W) IS , SOURCE CURRENT (A) TJ = 25C 10 0.16 0.20 ID = 4.0 A
0.12
0.08
0.04 0
1.0 0 0.25 0.50 0.75 1.00 1.25 1.50 VSD, SOURCE-TO-DRAIN VOLTAGE (V)
0
2.0
4.0
6.0
8.0
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 7. Source-Drain Diode Forward Voltage
Figure 8. On-Resistance versus Gate-to-Source Voltage
0.2 0.1 V GS(th) , VARIANCE (V) 0 -0.1 -0.2 -0.3 -0.4 -50 ID = 250 mA
20
16 POWER (W) 100 125
12
8.0
4.0 0 -25 0 25 50 75 150 0.01 0.1 1.0 TIME (sec) 10 TJ, TEMPERATURE (C)
Figure 9. Threshold Voltage
Figure 10. Single Pulse Power
2.0 NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE 1.0 DUTY CYCLE = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.0001 0.001 0.01 0.1 1.0 10 30 t1 NOTES: PDM 1. DUTY CYCLE, D = t1/t2 2. PER UNIT BASE = 2. RthJA = 62.5C/W 3. TJM - TA = PDMZthJA(t) 4. SURFACE MOUNTED
SINGLE PULSE
t2
SQUARE WAVE PULSE DURATION (sec)
Figure 11. Normalized Thermal Transient Impedance, Junction-to-Ambient
Motorola 16
Optoelectronic & Signal Products Division Small components. Big solutions.
NEW PRODUCT
MGSF3442XT1
N-Channel Enhancement-Mode MOSFET
Product Summary
VDS (V) 20 RDS(on) (W) 0.070 @ VGS = 4.5 V 0.095 @ VGS = 2.5 V ID (A) 1.7 1.3
2.5-V Rated
TSOP-6 TOP VIEW 1 3 mm 2 3 6 5 4 3 GATE
1 2 5 6 DRAIN
Power Dissipation MGSF3442XT1 - 0.95 W
SOURCE 4 N-CHANNEL MOSFET
2.75 mm
Absolute Maximum Ratings (TJ = 25C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage -- Continuous Drain Current -- Continuous @ TA = 25C Drain Current -- Pulsed Drain Current (tp 10 ms) Total Power Dissipation @ TA = 25C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes, for 10 seconds Symbol VDSS VGS ID IDM PD TJ, Tstg TL Limit 20 8.0 1.7 20 950 - 55 to 150 260 A mW C C Unit Vdc
Thermal Resistance Ratings
Parameter Junction-to-Ambient (1) 1. Surface Mounted on FR4 Board, t 5 sec. Symbol RqJA Limit 132 Unit C/W
Optoelectronic & Signal Products Division Small components. Big solutions.
Motorola 17
MGSF3442XT1
NEW PRODUCT
Specifications (TJ = 25C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 A) Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 70C) Gate-Body Leakage Current (VGS = 8.0 Vdc, VDS = 0) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Static Drain-to-Source On-Resistance (VGS = 4.5 Vdc, ID = 1.7 A) (VGS = 2.5 Vdc, ID = 1.3 A) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge SOURCE-DRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage(2) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. IS ISM VSD -- -- -- -- -- -- 1.0 5.0 1.2 A A V ( (VDD = 10 Vd , ID = 1 0 A, Vdc, 1.0 A, VGEN = 10 V, RL = 10 ) td(on) tr td(off) tf QT -- -- -- -- -- 8.0 24 36 10 -- 20 40 60 20 -- nC ns (VDS = 5.0 V) (VDS = 5.0 V) (VDG = 5.0 V) Ciss Coss Crss -- -- -- 90 50 10 -- -- -- pF VGS(th) 0.6 RDS(on) -- -- 0.058 0.072 0.070 0.095 -- -- Ohms Vdc V(BR)DSS 20 IDSS -- -- IGSS -- -- -- -- 1.0 5.0 100 nAdc -- -- Adc Vdc Symbol Min Typ Max Unit
Motorola 18
Optoelectronic & Signal Products Division Small components. Big solutions.
NEW PRODUCT
MGSF3454VT1
N-Channel Enhancement-Mode MOSFET
Product Summary
VDS (V) 30 RDS(on) (W) 0.065 @ VGS = 10 V 0.095 @ VGS = 4.5 V ID (A) 4.2 3.4
TSOP-6 TOP VIEW 1 3 mm 2 3 6 5 4 (3) G
(1, 2, 5, 6) D
Power Dissipation MGSF3454VT1 - 2.0 W
(4) S
2.75 mm
N-CHANNEL MOSFET
Absolute Maximum Ratings (TA = 25C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150C) (1) TA = 25C TA = 70C Pulsed Drain Current Continuous Source Current (Diode Conduction) (1) Maximum Power Dissipation (1) TA = 25C TA = 70C Operating Junction and Storage Temperature Range TJ, Tstg IDM IS PD Symbol VDS VGS ID Limit 30 20 4.2 3.4 20 1.7 2.0 1.3 - 55 to 150 C W A Unit V
Thermal Resistance Ratings
Parameter Maximum Junction-to-Ambient (1) 1. Surface Mounted on FR4 Board, t 5 sec. Symbol RqJA Limit 62.5 Unit C/W
Optoelectronic & Signal Products Division Small components. Big solutions.
Motorola 19
MGSF3454VT1
NEW PRODUCT
Specifications (TJ = 25C unless otherwise noted)
Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current VGS(th) IGSS IDSS VDS = VGS, ID = 250 mA VDS = 0 V, VGS = 20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 70C On-State Drain Current (1) Drain-Source On-State Resistance (1) ID(on) RDS(on) () VDS = 5.0 V, VGS = 10 V VGS = 10 V, ID = 4.2 A VGS = 4.5 V, ID = 3.4 A Forward Transconductance (1) Diode Forward Voltage (1) Dynamic (2) Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 1.7 A, di/dt = 100 A/ms ID VDD = 10 V, RL = 10 W V, VDS = 10 V, VGS = 10 V, ID = 4.2 A V V 42 8.0 1.8 1.3 10 20 30 35 20 80 ns 15 nC gFS VSD VDS = 10 V, ID = 4.2 A IS = 1.7 A, VGS = 0 V 15 0.050 0.070 7.0 1.2 0.065 0.095 S V 1.0 100 1.0 25 A V nA Symbol Test Condition Min Typ Max Unit
mA W
^ 1.0 A, VGEN = 10 V, RG = 6.0 W
15 20 10 50
1. Pulse test; pulse width 300 ms, duty cycle 2%. 2. Guaranteed by design, not subject to production testing.
Motorola 20
Optoelectronic & Signal Products Division Small components. Big solutions.
NEW PRODUCT
MGSF3454VT1
TYPICAL CHARACTERISTICS (25C unless otherwise noted)
20 VGS = 10, 9, 8, 7, 6V I D , DRAIN CURRENT (A) 16 5V I D , DRAIN CURRENT (A) 16 20
TJ = -55C 25C
12 4V
12
125C
8
8
4 3V 0 0 1 2 3 4
4
0
0
1
2
3
4
5
6
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
0.20 R DS(on) , ON-RESISTANCE (OHMS)
560 480 Ciss
0.16 C, CAPACITANCE (pF) 400 320 240 160 80 0 0 0 4 8 12 ID, DRAIN CURRENT (A) 16 20 0 Crss 6 12 Coss
0.12 VGS = 4.5 V VGS = 10 V 0.04
0.08
18
24
30
VDS - DRAIN-TO-SOURCE VOLTAGE (V)
Figure 3. On-Resistance vs. Drain Current
Figure 4. Capacitance
10 VGS, GATE-TO-SOURCE VOLTAGE (V) RDS(on) , ON-RESISTANCE (OHMS) (NORMALIZED) VDS = 15 V ID = 4.2 A
1.75 VGS = 10 V ID = 4.2 A 1.50
8
6
1.25
4
2 0 0 1.5 3.0 4.5 6.0 7.5 9.0 Qg, TOTAL GATE CHARGE (nC)
1.00
0.75 -50
-25
0 25 50 75 100 TJ, JUNCTION TEMPERATURE (C)
125
150
Figure 5. Gate Charge
Figure 6. On-Resistance vs. Junction Temperature
Optoelectronic & Signal Products Division Small components. Big solutions.
Motorola 21
MGSF3454VT1
NEW PRODUCT
TYPICAL CHARACTERISTICS (25C unless otherwise noted)
40 RDS(on) , ON-RESISTANCE (OHMS) I S , SOURCE CURRENT (A) 0.20
0.16
10
TJ = 150C TJ = 25C
0.12
0.08
ID = 4.2 A
0.04
1 0 0.25 0.50 0.75 1.00 1.25 1.5 1.75 VSD, SOURCE-TO-DRAIN VOLTAGE (V)
0
0
2 4 6 8 VGS - GATE-TO-SOURCE VOLTAGE (V)
10
Figure 7. Source-Drain Diode Forward Voltage
Figure 8. On-Resistance vs. Gate-to-Source Voltage
0.4 0.2 V GS(th) , VARIANCE (V) 0.0 -0.2 -0.4 -0.6 -0.8 -50
30
24 POWER (W) 125 150 ID = 250 A
18
12
6
-25
0
25
50
75
100
0 0.01
0.10
TJ, TEMPERATURE (C)
1.00 TIME (sec)
10.00
Figure 9. Threshold Voltage
Figure 10. Single Pulse Power
2 NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE 1 Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02 SINGLE PULSE 1.0E-03 1.0E-02 t1 P(pk)
0.01 1.0E-04
t2 DUTY CYCLE, D = t1/t2 1.0E-01
RJC(t) = r(t) RJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 1.0E+00 1.0E+01
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance, Junction-to-Ambient
Motorola 22
Optoelectronic & Signal Products Division Small components. Big solutions.
NEW PRODUCT
MGSF3454XT1
N-Channel Enhancement-Mode MOSFET
Product Summary
VDS (V) 30 RDS(on) (W) 0.065 @ VGS = 10 V 0.095 @ VGS = 4.5 V ID (A) 1.75 1.5
TSOP-6 TOP VIEW 1 3 mm 2 3 6 5 4 3 GATE
1 2 5 6 DRAIN
Power Dissipation MGSF3454XT1 - 0.95 W
SOURCE 4 N-CHANNEL MOSFET
2.75 mm
Absolute Maximum Ratings (TA = 25C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage -- Continuous Drain Current -- Continuous @ TA = 25C Drain Current -- Pulsed Drain Current (tp 10 ms) Total Power Dissipation @ TA = 25C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes, for 10 seconds Symbol VDSS VGS ID IDM PD TJ, Tstg TL Limit 30 20 1.75 20 950 - 55 to 150 260 A mW C C Unit Vdc
Thermal Resistance Ratings
Parameter Junction-to-Ambient (1) 1. Surface Mounted on FR4 Board, t 5 sec. Symbol RqJA Limit 132 Unit C/W
Optoelectronic & Signal Products Division Small components. Big solutions.
Motorola 23
MGSF3454XT1
NEW PRODUCT
Specifications (TJ = 25C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 A) Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 70C) Gate-Body Leakage Current (VGS = 20 Vdc, VDS = 0) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Static Drain-to-Source On-Resistance (VGS = 10 Vdc, ID = 1.75 A) (VGS = 4.5 Vdc, ID = 1.5 A) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge SOURCE-DRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage(2) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. IS ISM VSD -- -- -- -- -- -- 1.0 5.0 1.2 A A V ( (VDD = 10 Vd , ID = 1 0 A, Vdc, 1.0 A, VGEN = 10 V, RL = 10 ) td(on) tr td(off) tf QT -- -- -- -- -- 10 15 20 10 -- -- -- -- -- 15 nC ns (VDS = 5.0 V) (VDS = 5.0 V) (VDG = 5.0 V) Ciss Coss Crss -- -- -- 345 215 140 -- -- -- pF VGS(th) 1.0 RDS(on) -- -- 0.05 0.07 0.065 0.095 -- -- Ohms Vdc V(BR)DSS 30 IDSS -- -- IGSS -- -- -- -- 1.0 25 100 nAdc -- -- Adc Vdc Symbol Min Typ Max Unit
TYPICAL ELECTRICAL CHARACTERISTICS (25C unless otherwise noted)
7.0 VGS = 4.5 V 6.0 ID , DRAIN CURRENT (AMPS) 5.0 4.0 3.5 V 3.0 2.0 1.0 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 3.0 V 2.5 V 2.25 V 8.0 9.0 10 4.0 V R DS(on) , ON-RESISTANCE (W) 0.10 VGS = 10 V 0.08 25C 0.06 -55C 0.04 0.02 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 ID, DRAIN CURRENT (AMPS) TJ = 150C 0.12
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. Output Characteristics Motorola 24
Figure 2. On-Resistance versus Drain Current Optoelectronic & Signal Products Division Small components. Big solutions.
NEW PRODUCT
MGSF3454XT1
TYPICAL ELECTRICAL CHARACTERISTICS (25C unless otherwise noted)
0.16 R DS(on) , ON-RESISTANCE (W) 0.14 0.12 VGS = 4.5 V 0.10 0.08 -55C 0.06 0.04 0 0.5 1.0 1.5 2.0 2.5 3.0 ID, DRAIN CURRENT (AMPS) 10 0 4.0 8.0 12 16 20 24 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 25C TJ = 150C C, CAPACITANCE (pF) 1000
Ciss Coss Crss
100
VGS = 0 V f = 1.0 MHz TJ = 25C
Figure 3. On-Resistance versus Drain Current
Figure 4. Capacitance
VGS , GATE-TO-SOURCE VOLTAGE (VOLTS)
10 VDS = 24 V TJ = 25C ID = 10 A R DS(on) , ON-RESISTANCE (NORMALIZED)
1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -55 -5.0 45 95 145 TJ, JUNCTION TEMPERATURE (C) ID = 1.5 A VGS = 4.5 V
8.0
6.0
4.0
2.0 0 0 2.0 4.0 6.0 8.0 10 QG, TOTAL GATE CHARGE (nC)
Figure 5. Gate Charge
Figure 6. On-Resistance versus Junction Temperature
1.6 R DS(on) , ON-RESISTANCE (NORMALIZED) 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -55 -5.0 45 95 145 TJ, JUNCTION TEMPERATURE (C) IS, SOURCE CURRENT (AMPS) ID = 6.4 A VGS = 10 V
10
1.0
TJ = 150C
25C -55C
0.1
0.01
0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 7. On-Resistance versus Junction Temperature
Figure 8. Source-Drain Diode Forward Voltage
Optoelectronic & Signal Products Division Small components. Big solutions.
Motorola 25
MGSF3454XT1
NEW PRODUCT
TYPICAL ELECTRICAL CHARACTERISTICS (25C unless otherwise noted)
0.5 R DS(on) , ON-RESISTANCE (W) 2.0 1.8 0.4 1.6 0.3 V GS(th) (VOLTS) 1.4 1.2 1.0 0.8 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) ID = 250 mA
0.2 ID = 1.75 A 0.1
Figure 9. On-Resistance versus Gate-to-Source Voltage
Figure 10. Threshold Voltage
20
16 POWER (WATTS)
12
8.0
4.0 0 0.01 0.1 1.0 TIME (sec) 10 100
Figure 11. Single Pulse Power
1.0 NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE DUTY CYCLE = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 0.0001 0.001 0.01 0.1 1.0 10 100 1.0 k SQUARE WAVE PULSE DURATION (sec) P(pk) RJA(t) = r(t) RJA D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TA = P(pk) RJA(t)
t2 DUTY CYCLE, D = t1/t2
t1
Figure 12. Normalized Thermal Transient Impedance, Junction-to-Ambient
Motorola 26
Optoelectronic & Signal Products Division Small components. Big solutions.
NEW PRODUCT
MGSF3455VT1
P-Channel Enhancement-Mode MOSFET
Product Summary
VDS (V) - 30 RDS(on) (W) 0.10 @ VGS = -10 V 0.19 @ VGS = - 4.5 V ID (A) 3.5 2.5
TSOP-6 TOP VIEW 1 3 mm 2 3 6 5 4 (3) G
(4) S
Power Dissipation MGSF3455VT1 - 2.0 W
(1, 2, 5, 6) D
2.75 mm
P-CHANNEL MOSFET
Absolute Maximum Ratings (TA = 25C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150C) (1) TA = 25C TA = 70C Pulsed Drain Current Continuous Source Current (Diode Conduction) (1) Maximum Power Dissipation (1) TA = 25C TA = 70C Operating Junction and Storage Temperature Range TJ, Tstg IDM IS PD Symbol VDS VGS ID Limit - 30 20 3.5 2.7 20 - 1.7 2.0 1.3 - 55 to 150 C W A Unit V
Thermal Resistance Ratings
Parameter Maximum Junction-to-Ambient (1) 1. Surface Mounted on FR4 Board, t 5 sec. Symbol RqJA Limit 62.5 Unit C/W
Optoelectronic & Signal Products Division Small components. Big solutions.
Motorola 27
MGSF3455VT1
NEW PRODUCT
Specifications (TJ = 25C unless otherwise noted)
Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current VGS(th) IGSS IDSS VDS = VGS, ID = 250 mA VDS = 0 V, VGS = 20 V VDS = - 30 V, VGS = 0 V VDS = - 30 V, VGS = 0 V, TJ = 70C On-State Drain Current (1) Drain-Source On-State Resistance (1) ID(on) RDS(on) () VDS = - 5.0 V, VGS = -10 V VGS = -10 V, ID = - 3.5 A VGS = - 4.5 V, ID = 2.5 A Forward Transconductance (1) Diode Forward Voltage (1) Dynamic (2) Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = -1.7 A, di/dt = 100 A/ms ID VDD = -10 V, RL = 10 W 10 V, VDS = -10 V, VGS = -10 V ID = - 3 5 A 10 V 10 V, 3.5 5.1 1.5 1.0 10 20 30 35 20 80 ns 10 nC gFS VSD VDS = -15 V, ID = - 3.5 A IS = -1.7 A, VGS = 0 V -15 0.080 0.134 4.0 -1.2 0.100 0.190 S V -1.0 100 -1.0 - 5.0 A V nA Symbol Test Condition Min Typ Max Unit
mA W
^ -1.0 A, VGEN = -10 V, RG = 6.0 W
15 20 10 50
1. Pulse test; pulse width 300 ms, duty cycle 2%. 2. Guaranteed by design, not subject to production testing.
Motorola 28
Optoelectronic & Signal Products Division Small components. Big solutions.
NEW PRODUCT
MGSF3455VT1
TYPICAL CHARACTERISTICS (25C unless otherwise noted)
20 VGS = 10, 9, 8, 7 V I D , DRAIN CURRENT (A) 16 5V 12 6V I D , DRAIN CURRENT (A) 16 20
TJ = -55C 25C 125C
12
8
8
4V
4 3V 0 0 1 2 3 4
4
0
0
1
2
3
4
5
6
7
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
0.30 R DS(on) , ON-RESISTANCE (OHMS)
580 500 Ciss
0.24 C, CAPACITANCE (pF) 420 340 260 180 100 0 20 0 4 8 12 ID, DRAIN CURRENT (A) 16 20 0 Crss
0.18 VGS = 4.5 V 0.12 VGS = 10 V
Coss
0.06
6
12
18
24
30
VDS - DRAIN-TO-SOURCE VOLTAGE (V)
Figure 3. On-Resistance vs. Drain Current
Figure 4. Capacitance
10 VGS, GATE-TO-SOURCE VOLTAGE (V) RDS(on) , ON-RESISTANCE (OHMS) (NORMALIZED) VDS = 15 V ID = 3.5 A
1.60 1.45 1.30 1.15 1.00 0.85 0.7 -50 VGS = 10 V ID = 3.5 A
8
6
4
2 0 0 1.5 3.0 4.5 6.0 Qg, TOTAL GATE CHARGE (nC)
-25
0 25 50 75 100 TJ, JUNCTION TEMPERATURE (C)
125
150
Figure 5. Gate Charge
Figure 6. On-Resistance vs. Junction Temperature
Optoelectronic & Signal Products Division Small components. Big solutions.
Motorola 29
MGSF3455VT1
NEW PRODUCT
TYPICAL CHARACTERISTICS (25C unless otherwise noted)
20 RDS(on) , ON-RESISTANCE (OHMS) 0.40
I S , SOURCE CURRENT (A)
10 TJ = 150C
0.32
0.24
TJ = 25C
0.16
ID = 3.5 A
0.08 0
1 0 0.25 0.50 0.75 1.00 1.25 1.5 1.75 VSD, SOURCE-TO-DRAIN VOLTAGE (V)
0
2
4
6
8
10
VGS - GATE-TO-SOURCE VOLTAGE (V)
Figure 7. Source-Drain Diode Forward Voltage
Figure 8. On-Resistance vs. Gate-to-Source Voltage
0.60 0.45 V GS(th) , VARIANCE (V) 0.30 0.15 0.0 -0.15 -0.3 -50 ID = 250 A
30
24 POWER (W) 25 50 75 100 TJ, TEMPERATURE (C) 125 150
18
12
6 0 0.01
-25
0
0.10
1.00 TIME (sec)
10.00
Figure 9. Threshold Voltage
Figure 10. Single Pulse Power
2 NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE 1 Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02 SINGLE PULSE 1.0E-03 1.0E-02 t1 P(pk)
0.01 1.0E-04
t2 DUTY CYCLE, D = t1/t2 1.0E-01
RJC(t) = r(t) RJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 1.0E+00 1.0E+01
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance, Junction-to-Ambient
Motorola 30
Optoelectronic & Signal Products Division Small components. Big solutions.
NEW PRODUCT
MGSF3455XT1
P-Channel Enhancement-Mode MOSFET
Product Summary
VDS (V) 30 RDS(on) (W) 0.10 @ VGS = 10 V 0.19 @ VGS = 4.5 V ID (A) 1.45 1.2
TSOP-6 TOP VIEW 1 3 mm 2 3 6 5 4 3 GATE
1 2 5 6 DRAIN
Power Dissipation MGSF3455XT1 - 0.95 W
SOURCE 4 P-CHANNEL MOSFET
2.75 mm
Absolute Maximum Ratings (TJ = 25C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage -- Continuous Drain Current -- Continuous @ TA = 25C Drain Current -- Pulsed Drain Current (tp 10 ms) Total Power Dissipation @ TA = 25C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes, for 10 seconds Symbol VDSS VGS ID IDM PD TJ, Tstg TL Limit 30 20 1.45 10 950 - 55 to 150 260 A mW C C Unit Vdc
Thermal Resistance Ratings
Parameter Junction-to-Ambient (1) 1. Surface Mounted on FR4 Board, t 5 sec. Symbol RqJA Limit 132 Unit C/W
Optoelectronic & Signal Products Division Small components. Big solutions.
Motorola 31
MGSF3455XT1
NEW PRODUCT
Specifications (TJ = 25C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 A) Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 70C) Gate-Body Leakage Current (VGS = 820 Vdc, VDS = 0) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Static Drain-to-Source On-Resistance (VGS = 10 Vdc, ID = 1.45 A) (VGS = 4.5 Vdc, ID = 1.2 A) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge SOURCE-DRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage(2) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. IS ISM VSD -- -- -- -- -- 0.85 1.0 5.0 -- A A V ( (VDD = 15 Vd , ID = 1 0 A, Vdc, 1.0 A, VGEN = 10 V, RL = 10 ) td(on) tr td(off) tf QT -- -- -- -- -- 10 15 20 10 3000 20 30 35 20 -- pC ns (VDS = 5.0 V) (VDS = 5.0 V) (VDG = 5.0 V) Ciss Coss Crss -- -- -- 90 50 10 -- -- -- pF VGS(th) 1.0 RDS(on) -- -- 0.080 0.134 0.100 0.190 -- -- Ohms Vdc V(BR)DSS 30 IDSS -- -- IGSS -- -- -- -- 1.0 5.0 100 nAdc -- -- Adc Vdc Symbol Min Typ Max Unit
Motorola 32
Optoelectronic & Signal Products Division Small components. Big solutions.
TSOP-6 Tape and Reel Options
B F E J AA H
QL
A
C
G
D T
K
AA
K SECTION A-A
M
N V
L
PACKAGE ORIENTATION
P DEVICE
QUANTITY PER REEL REEL SIZE 7-inches 13-inches QUANTITY 3,000 10,000
MGSF34xxX-T1 W T1 Millimeters Dim Di A B C D E F G H J K K L Min 7.70 1.65 3.10 3.05 3.90 3.90 3.10 0.17 1.50 1.30 1.00 170 -- 1.50 12.8 21.5 1.00 53.0 7.90 Max 8.30 1.85 3.30 3.25 4.10 4.10 3.30 0.23 1.60 1.50 1.10 180 3 2.50 13.2 22.5 2.00 54.0 8.90 Min 0.303 0.065 0.122 0.120 0.154 0.154 0.122 0.007 0.059 0.051 0.039 6.929 -- 0.059 0.504 0.846 0.039 2.087 0.311 Inches Max 0.327 0.073 0.130 0.128 0.161 0.161 0.130 0.009 0.063 0.059 0.043 7.087 3 0.098 0.520 0.886 0.078 2.126 0.350 Millimeters Min 7.70 1.65 3.10 3.05 3.90 3.90 3.10 0.17 1.50 1.30 1.00 328 -- 1.50 12.8 21.5 1.00 53.0 24.4 Max 8.30 1.85 3.30 3.25 4.10 4.10 3.30 0.23 1.60 1.50 1.10 332 3 2.50 13.2 22.5 2.00 54.0 16.4 MGSF34xxX-T3
T3 Inches Min 0.303 0.065 0.122 0.120 0.154 0.154 0.122 0.007 0.059 0.051 0.039 12.91 -- 0.059 0.504 0.847 0.039 2.087 0.961 Max 0.327 0.073 0.130 0.128 0.161 0.161 0.130 0.009 0.063 0.059 0.043 13.07 3 0.098 0.520 0.886 0.078 2.126 1.039
QL
M N P T V W
Optoelectronic & Signal Products Division Small components. Big solutions.
Motorola 33
Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 Customer Focus Center: 1-800-521-6274 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 1-602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, Motorola Fax Back System - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 - http://sps.motorola.com/mfax/ HOME PAGE: http://motorola.com/sps/ JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. 81-3-5487-8488
Motorola 34
BR1491/D Optoelectronic & Signal Products Division Small components. Big solutions.

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