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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document MHPM7A30A60B by MHPM7A30A60B/D Hybrid Power Module Integrated Power Stage for 3.0 hp Motor Drives (This device is not recommended for new designs) (This device is replaced by MHPM7A30E60DC3) This module integrates a 3-phase input rectifier bridge, 3-phase output inverter, brake transistor/diode, current sense resistor and temperature sensor in a single convenient package. The output inverter utilizes advanced insulated gate bipolar transistors (IGBT) matched with free-wheeling diodes to give optimal dynamic performance. It has been configured for use as a three-phase motor drive module or for many other power switching applications. The top connector pins have been designed for easy interfacing to the user's control board. * DC Bus Current Sense Resistor Included * Short Circuit Rated 10 s @ 25C, 300V * Temperature Sensor Included * Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms) * Convenient Package Outline Recognized * UL * Access to Positive and Negative DC Bus * Visit our website at http://www.mot-sps.com/tsg/ MHPM7A30A60B 30 AMP, 600 VOLT HYBRID POWER MODULE PLASTIC PACKAGE CASE 440A-02, Style 1 MAXIMUM DEVICE RATINGS (TJ = 25C unless otherwise noted) Rating INPUT RECTIFIER BRIDGE Peak Repetitive Reverse Voltage (TJ = 125C) Average Output Rectified Current Peak Non-repetitive Surge Current (1/2 cycle)(1) OUTPUT INVERTER IGBT Reverse Voltage Gate-Emitter Voltage Continuous IGBT Collector Current Peak Repetitive IGBT Collector Current - (PW = 1.0 ms)(2) Continuous Free-Wheeling Diode Current Peak Repetitive Free-Wheeling Diode Current - (PW = 1.0 ms)(2) IGBT Power Dissipation per die (TC = 95C) Free-Wheeling Diode Power Dissipation per die (TC = 95C) Junction Temperature Range Short Circuit Duration (VCE = 300V, TJ = 25C) (1) 1 cycle = 50 or 60 Hz (2) 1 ms = 1.0% duty cycle VCES VGES ICmax IC(pk) IFmax IF(pk) PD PD TJ tsc 600 20 30 60 30 60 85 40 - 40 to +125 10 V V A A A A W W C s VRRM IO IFSM 600 30 360 V A A Symbol Value Unit REV 2 (c) Motorola IGBT Device Motorola, Inc. 1998 Data 1 MHPM7A30A60B MAXIMUM DEVICE RATINGS (continued) (TJ = 25C unless otherwise noted) Rating BRAKE CIRCUIT IGBT Reverse Voltage Gate-Emitter Voltage Continuous IGBT Collector Current Peak Repetitive IGBT Collector Current(2) IGBT Power Dissipation (TC = 95C) Peak Repetitive Output Diode Reverse Voltage (TC = 95C) Continuous Output Diode Current Peak Output Diode Current (PW = 1.0 ms) (2) TOTAL MODULE Isolation Voltage (47-63 Hz, 1.0 Minute Duration) Operating Case Temperature Range Storage Temperature Range Mounting Torque VISO TC Tstg - 2500 - 40 to + 90 - 40 to +125 6.0 Vac C C lb-in VCES VGES ICmax IC(pk) PD VRRM IFmax IF(pk) 600 20 30 60 85 600 30 60 V V A A W V A A Symbol Value Unit ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic INPUT RECTIFIER BRIDGE Reverse Leakage Current (VRRM = 600 V) Forward Voltage (IF = 30 A) Thermal Resistance (Each Die) OUTPUT INVERTER Gate-Emitter Leakage Current (VCE = 0 V, VGE = 20 V) Collector-Emitter Leakage Current (VCE = 600 V, VGE = 0 V) TJ = 25C TJ = 125C Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA) Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0) Collector-Emitter Saturation Voltage (IC = 30 A, VGE = 15 V) Input Capacitance (VGE = 0 V, VCE = 10 V, f = 1.0 MHz) Input Gate Charge (VCE = 300 V, IC = 30 A, VGE = 15 V) Fall Time - Inductive Load (VCE = 300 V, IC = 30 A, VGE = 15 V, RG(off) = 20 ) Turn-On Energy (VCE = 300 V, IC = 30 A, VGE = 15 V, RG(on) = 39 ) Turn-Off Energy (VCE = 300 V, IC = 30 A, VGE = 15 V, RG(off) = 20 ) Free Wheeling Diode Forward Voltage (IF = 30 A, VGE = 0 V) Free Wheeling Diode Reverse Recovery Time (IF = 30 A, V = 300 V, di/dt = 150 A/s) Free Wheeling Diode Stored Charge (IF = 30 A, V = 300 V, di/dt = 150 A/s) Thermal Resistance - IGBT (Each Die) Thermal Resistance - Free-Wheeling Diode (Each Die) (2) 1.0 ms = 1.0% duty cycle IGES ICES - - VGE(th) V(BR)CES VCE(SAT) Cies QT tf Eon Eoff VF trr Qrr RJC RJC 4.0 600 - - - - - - - - - - - 6.0 2000 6.0 - 2.3 6600 220 300 - - 1.3 150 1580 - - 100 - 8.0 - 3.5 - - 500 3.0 3.0 2.2 200 2300 1.2 2.7 V V V pF nC ns mJ mJ V ns nC C/W C/W - - 20 A A IR VF RJC - - - 5.0 1.16 - 50 1.5 2.7 A V C/W Symbol Min Typ Max Unit 2 Motorola IGBT Device Data MHPM7A30A60B ELECTRICAL CHARACTERISTICS (continued) (TJ = 25C unless otherwise noted) Characteristic BRAKE CIRCUIT Gate-Emitter Leakage Current (VCE = 0 V, VGE = 20 V) Collector-Emitter Leakage Current (VCE = 600 V, VGE = 0 V) TJ = 25C TJ = 125C Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA) Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0) Collector-Emitter Saturation Voltage (VGE = 15 V, IC = 30 A) Input Capacitance (VGE = 0 V, VCE = 10 V, f = 1.0 MHz) Input Gate Charge (VCE = 300 V, IC = 30 A, VGE = 15 V) Fall Time - Inductive Load (VCE = 300 V, IC = 30 A, VGE = 15 V, RG(off) = 20 ) Turn-On Energy (VCE = 300 V, IC = 30 A, VGE = 15 V, RG(on) = 39 ) Turn-Off Energy (VCE = 300 V, IC = 30 A, VGE = 15 V, RG(off) = 20 ) Output Diode Forward Voltage (IF = 30 A) Output Diode Reverse Leakage Current Thermal Resistance - IGBT Thermal Resistance - Diode SENSE RESISTOR Resistance Resistance Tolerance TEMPERATURE SENSE DIODE Forward Voltage (@ IF = 1.0 mA) Forward Voltage Temperature Coefficient (@ IF = 1.0 mA) VF TCVF - - 0.660 -1.95 - - V mV/C Rsense Rtol - -1.0 5.0 - - +1.0 m % IGES ICES - - VGE(th) V(BR)CES VCE(SAT) Cies QT tf Eon Eoff VF IR RJC RJC 4.0 600 - - - - - - - - - - 6.0 2000 6.0 - 2.3 6600 220 300 - - 1.3 - - - 100 - 8.0 - 3.5 - - 500 3.0 3.0 2.0 50 1.2 2.7 V V V pF nC ns mJ mJ V A C/W C/W - - 20 A A Symbol Min Typ Max Unit Motorola IGBT Device Data 3 MHPM7A30A60B Typical Characteristics 60 IF, FORWARD CURRENT (AMPS) 50 40 30 20 TJ = 125C 10 25C 0 0 0.2 0.4 0.6 0.8 1 1.2 VF, FORWARD VOLTAGE (VOLTS) 1.4 1.6 0 0 0.2 IF, FORWARD CURRENT (AMPS) 60 50 40 30 20 TJ = 125C 10 25C 0.4 0.6 0.8 1 1.2 VF, FORWARD VOLTAGE (VOLTS) 1.4 1.6 Figure 1. Forward Characteristics -- Input Rectifier 60 IC, COLLECTOR CURRENT (AMPS) 50 15 V 40 30 20 10 0 0 1 2 3 4 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 5 IC, COLLECTOR CURRENT (AMPS) TJ = 25C VGE = 18 V 12 V 9 V 50 60 Figure 2. Forward Characteristics -- Free-Wheeling Diode TJ = 125C VGE = 18 V 12 V 15 V 9V 40 30 20 10 0 0 1 2 3 4 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 5 Figure 3. Forward Characteristics, TJ = 25C Figure 4. Forward Characteristics, TJ = 125C VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 20 IC = 15 A 30 A 60 A 12 TJ = 25C 450 400 V 400 350 300 V 300 250 200 150 100 50 0 0 20 40 IC = 30 A TJ = 25C VCE = 200 V VCE = 200 V 400 V 300 V 18 16 14 12 10 8 6 4 2 VGE, GATE-EMITTER VOLTAGE (VOLTS) 16 8 4 0 6 8 10 12 14 16 18 VGE, GATE-EMITTER VOLTAGE (VOLTS) 20 0 60 80 100 120 140 160 180 200 220 240 Qg, TOTAL GATE CHARGE (nC) Figure 5. Collector-Emitter Voltage versus Gate-Emitter Voltage Figure 6. Collector-Emitter and Gate-Emitter Voltages versus Total Gate Charge 4 Motorola IGBT Device Data MHPM7A30A60B Typical Characteristics 1000 toff td(off) t, TIME (ns) t, TIME (ns) tf 100 1000 toff tf td(off) VCE = 300 V VGE = 15 V RG(off) = 20 TJ = 125C VCE = 300 V VGE = 15 V RG(off) = 20 TJ = 25C 10 0 10 20 30 40 50 60 70 100 0 IC, COLLECTOR CURRENT (AMPS) 10 50 20 30 40 IC, COLLECTOR CURRENT (AMPS) 60 70 Figure 7. Inductive Switching Times versus Collector Current, TJ = 25C Figure 8. Inductive Switching Times versus Collector Current, TJ = 125C 10000 VCE = 300 V VGE = 15 V IC = 30 A TJ = 25C t, TIME (ns) 100000 VCE = 300 V VGE = 15 V IC = 30 A TJ = 125C toff td(off) 1000 tf tf 100 10 100 RG(off), GATE RESISTANCE (OHMS) 1000 10 100 RG(off), GATE RESISTANCE (OHMS) 1000 10000 t, TIME (ns) 1000 toff td(off) 100 Figure 9. Inductive Switching Times versus Gate Resistance, TJ = 25C Figure 10. Inductive Switching Times versus Gate Resistance, TJ = 125C 1000 VCE = 300 V VGE = 15 V RG(on) = 39 100 t, TIME (ns) 10000 VCE = 300 V VGE = 15 V IC = 30 A 1000 t, TIME (ns) 25C TJ = 125C 25C tr TJ = 125C tr 10 100 0 0 10 30 20 40 50 IC, COLLECTOR CURRENT (AMPS) 60 70 10 10 100 RG(on), GATE RESISTANCE (OHMS) 1000 Figure 11. Inductive Switching Times versus Collector Current Figure 12. Inductive Switching Times versus Gate Resistance Motorola IGBT Device Data 5 MHPM7A30A60B Typical Characteristics 10000 E off , TURN-OFF ENERGY LOSSES ( J) VCE = 300 V VGE = 15 V RG(off) = 20 1000 25C 10000 E off , TURN-OFF ENERGY LOSSES ( J) VCE = 300 V VGE = 15 V IC = 30 A TJ = 125C TJ = 125C 25C 1000 100 10 0 10 50 20 30 40 IC, COLLECTOR CURRENT (AMPS) 60 70 100 10 100 RG(off), GATE RESISTANCE (OHMS) 1000 Figure 13. Turn-Off Energy Losses versus Collector Current Figure 14. Turn-Off Energy Losses versus Gate Resistance Irr , PEAK REVERSE RECOVERY CURRENT (A) t rr , REVERSE RECOVERY TIME (ns) 1000 TJ = 125C 25C 100000 100 C, CAPACITANCE (pF) trr 10000 Cies TJ = 125C 10 I rr 25C 1000 Coes 100 Cres 1 0 10 -di/dt = 150 A/s 20 30 40 50 IF, FORWARD CURRENT (AMPS) 60 70 10 0 10 20 30 40 50 60 70 80 90 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 Figure 15. Reverse Recovery Characteristics -- Free-Wheeling Diode r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 16. Capacitance Variation 80 IC, COLLECTOR CURRENT (AMPS) 1.0 IGBT 0.1 DIODE 60 40 0.01 20 +VGE = 15 V -VGE = 0 V RG(on) = 39 TJ = 25C 0 200 400 600 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 800 0 0.001 1.0 10 t, TIME (ms) 100 1000 Figure 17. Reversed Biased Safe Operating Area (RBSOA) Figure 18. Thermal Response 6 Motorola IGBT Device Data MHPM7A30A60B ton td(on) OUTPUT, Vout INVERTED 10% 90% VCE INPUT, Vin 50% 10% PULSE WIDTH 50% tr 90% td(off) 90% toff tf IC RG L VCE Figure 19. Inductive Switching Time Test Circuit and Timing Chart Motorola IGBT Device Data 7 MHPM7A30A60B 8 Q1 P1 1 9 G1 E1 D8 8 10 D10 D12 D7 12 U V W Q2 16 D2 G7 G2 G4 17 D4 G6 Q4 14 D6 Q6 20 19 18 G3 E3 G5 E5 D1 11 13 D3 7 P2 D5 Q3 Q5 B 21 Q7 15 D9 D11 D13 TEMP SENSE N1 25 6 5 N2 -I +I 4 3 +T C Q8 DEVICE INTEGRATION = PIN NUMBER IDENTIFICATION 2 -T C 3-Phase Input Rectifier Bridge Brake IGBT/ Diode 3-Phase Output IGBT/Diode Bridge, with Current and Temperature Sense 24 R 23 S Figure 20. Integrated Power Stage Schematic 22 T Motorola IGBT Device Data MHPM7A30A60B PACKAGE DIMENSIONS E C K AB AC AD AE AF 3 PL AA 9 PL A N 1 AH G 2 PL 17 Q 2 PL V L M S R B DETAIL Z Y 4 PL 25 18 AG P U J 25 PL X 4 PL T NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. LEAD LOCATION DIMENSIONS (ie: M, G, AA...) ARE TO THE CENTER OF THE LEAD. MILLIMETERS MIN MAX 97.54 98.55 62.74 63.75 14.60 15.88 0.56 0.97 10.80 12.06 0.81 1.22 1.60 2.21 8.58 9.19 0.56 0.97 18.80 20.57 22.86 23.88 46.23 47.24 9.78 11.05 82.55 83.57 4.01 4.62 26.42 27.43 12.06 12.95 4.32 5.33 86.36 87.38 14.22 15.24 6.55 7.16 2.49 3.10 2.24 2.84 7.32 7.92 4.78 5.38 8.58 9.19 6.05 6.65 4.78 5.38 69.34 70.36 --- 5.08 INCHES MIN MAX 3.840 3.880 2.470 2.510 0.575 0.625 0.022 0.038 0.425 0.475 0.032 0.048 0.063 0.087 0.338 0.362 0.022 0.038 0.740 0.810 0.900 0.940 1.820 1.860 0.385 0.435 3.250 3.290 0.158 0.182 1.040 1.080 0.475 0.515 0.170 0.210 3.400 3.440 0.560 0.600 0.258 0.282 0.098 0.122 0.088 0.112 0.288 0.312 0.188 0.212 0.338 0.362 0.238 0.262 0.188 0.212 2.730 2.770 --- 0.200 H 7 PL D F DETAIL Z CASE 440A-02 ISSUE A DIM A B C D E F G H J K L M N P Q R S T U V X Y AA AB AC AD AE AF AG AH Motorola IGBT Device Data 9 MHPM7A30A60B Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303-675-2140 or 1-800-441-2447 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 INTERNET: http://www.mot.com/SPS/ JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 81-3-3521-8315 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 10 MHPM7A30A60B/D Motorola IGBT Device Data |
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