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MMBZXXXALT1 Dual Common Anode Series
Preferred Device
5.6 Volt through 33 Volt SOT-23 Dual Monolithic Common Anode Zeners
Transient Voltage Suppressors for ESD Protection
These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium.
Specification Features: http://onsemi.com
SOT-23 COMMON ANODE DUAL ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS 24 & 40 WATTS PEAK POWER
PIN 1. CATHODE 2. CATHODE 3. ANODE 1 3 2 3 1 2 LOW PROFILE SOT-23 PLASTIC CASE 318
* SOT-23 Package Allows Either Two Separate Unidirectional * * * *
Configurations or a Single Bidirectional Configuration Peak Power -- 24 or 40 Watts @ 1.0 ms (Unidirectional), per Figure 5 Waveform Maximum Clamping Voltage @ Peak Pulse Current Low Leakage < 5.0 A ESD Rating of Class N (exceeding 16 kV) per the Human Body Model
ORDERING INFORMATION
Device MMBZXXXALT1 Package SOT23 Shipping Tape and Reel 3000 Units/Reel Tape and Reel 10,000 Units/Reel
Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable
Package designed for optimal automated board assembly Small package size for high density applications Available in 8 mm Tape and Reel Use the Device Number to order the 7 inch/3,000 unit reel. Replace the "T1" with "T3" in the Device Number to order the 13 inch/10,000 unit reel.
THERMAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Peak Power Dissipation @ 1.0 ms(1) @ TA 25C MMBZ5V6ALT1 thru MMBZ10VALT1 MMBZ12VALT1 thru MMBZ33VALT1
MMBZXXXALT3
SOT23
Preferred devices are recommended choices for future use and best overall value.
Symbol Ppk PD RJA PD RJA TJ Tstg TL
Value 24 40 225 1.8 556 300 2.4 417 - 55 to +150 260
Unit Watts mW mW/C C/W mW mW/C C/W C C
Total Power Dissipation on FR-5 Board(2) @ TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Total Power Dissipation on Alumina Substrate(3) @ TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Range Lead Solder Temperature -- Maximum (10 Second Duration)
NOTES: 1. Non-repetitive current pulse per Figure 5 and derate above TA = 25C per Figure 6. NOTES: 2. FR-5 = 1.0 x 0.75 x 0.62 in. NOTES: 3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina Other voltages may be available upon request
(c) Semiconductor Components Industries, LLC, 1999
1
December, 1999 - Rev. 3
Publication Order Number: MMBZ5V6ALT1/D
MMBZXXXALT1 Dual Common Anode Series
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3) (VF = 0.9 V Max @ IF = 10 mA)
Breakdown Voltage VBR(4) (V) Min 5.32 5.89 Nom 5.6* 6.2* Max 5.88 6.51 20 1.0 5.0 0.5 3.0 3.0 11 -- 1600 -- 0.25 -- Max Reverse Leakage Current
24 WATTS
Max Zener Impedance (6) Max Reverse Surge S Current IRSM(5) (A) 3.0 2.76 Max Reverse Voltage @ IRSM(5) (Clamping Voltage) VRSM (V) 8.0 8.7 Maximum Temperature Coefficient of VBR (mV/C) 1.26 2.80
@ IT (mA)
IR @ VR (A) (V)
ZZT @ IZT () (mA)
ZZK @ IZK () (mA)
(VF = 1.1 V Max @ IF = 200 mA)
6.46 6.8 7.14 1.0 0.5 4.5 -- -- -- 2.5 9.6 3.40
(VF = 1.1 V Max @ IF = 200 mA)
Breakdown Voltage VBR(4) (V) Min 14.25 19.00 31.35 Nom *15* *20* 33 Max 15.75 21.00 34.65 1.0 1.0 1.0 12.0 17.0 26.0 @ IT (mA) Reverse Voltage Working Peak VRWM (V)
40 WATTS
Max Reverse Leakage Current IRWM IR (nA) 50 50 50 Max Reverse Surge Current IRSM(5) (A) 1.9 1.4 0.87 Max Reverse Voltage @ IRSM(5) (Clamping Voltage) VRSM (V) 21 28 46 Maximum Temperature Coefficient of VBR (mV/C) 12.30 17.20 30.40
(4) VBR measured at pulse test current IT at an ambient temperature of 25C. (4) Surge current waveform per Figure 5 and derate per Figure 6. (5) ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current supplied. The specfied limits are IZ(AC) = 0.1 IZ(DC), with AC frequency = 1 kHz. * Devices are currently in production, and are available in stock
TYPICAL CHARACTERISTICS
18 BREAKDOWN VOLTAGE (VOLTS) (VZ, V BR @ I T ) 15 12 9 6 3 0 - 40 0.1 0.01 - 40 IR (nA) + 50 TEMPERATURE (C) 10 1000
100
1
0
+ 100
+ 150
+ 25 + 85 TEMPERATURE (C)
+ 125
Figure 1. Typical Breakdown Voltage versus Temperature
(Upper curve for each voltage is bidirectional mode, lower curve is unidirectional mode)
Figure 2. Typical Leakage Current versus Temperature
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MMBZXXXALT1 Dual Common Anode Series
320 280 PD , POWER DISSIPATION (mW) C, CAPACITANCE (pF) 240 200 160 120 15 V 80 40 0 0 1 BIAS (V) 2 3 5.6 V 300 250 ALUMINA SUBSTRATE 200 150 100 FR-5 BOARD 50 0
0
25
50
75 100 125 TEMPERATURE (C)
150
175
Figure 3. Typical Capacitance versus Bias Voltage
(Upper curve for each voltage is unidirectional mode, lower curve is bidirectional mode) 100 90 80 70 60 50 40 30 20 10 0 0
Figure 4. Steady State Power Derating Curve
tr 100 VALUE (%) PEAK VALUE -- IRSM
PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO 50% OF IRSM. tr 10 s
IRSM HALF VALUE -- 2 50 tP 0
0
1
2
3 t, TIME (ms)
4
PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT @ TA = 25 C
25
50 75 100 125 150 TA, AMBIENT TEMPERATURE (C)
175
200
Figure 5. Pulse Waveform MMBZ5V6ALT1
100 Ppk PEAK SURGE POWER (W) Ppk PEAK SURGE POWER (W) RECTANGULAR WAVEFORM, TA = 25C BIDIRECTIONAL 100
Figure 6. Pulse Derating Curve MMBZ5V6ALT1
RECTANGULAR WAVEFORM, TA = 25C BIDIRECTIONAL
10
UNIDIRECTIONAL
10 UNIDIRECTIONAL
1
1 0.1 1 10 PW, PULSE WIDTH (ms) 100 1000 0.1 UNIDIRECTIONAL 1 10 PW, PULSE WIDTH (ms) 100 1000
Figure 7. Maximum Non-repetitive Surge Power, Ppk versus PW
Power is defined as VRSM x IZ(pk) where VRSM is the clamping voltage at IZ(pk).
Figure 8. Maximum Non-repetitive Surge Power, Ppk(NOM) versus PW
Power is defined as VZ(NOM) x IZ(pk) where VZ(NOM) is the nominal zener voltage measured at the low test current used for voltage classification.
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MMBZXXXALT1 Dual Common Anode Series
TYPICAL COMMON ANODE APPLICATIONS A quad junction common anode design in a SOT-23 package protects four separate lines using only one package. This adds flexibility and creativity to PCB design especially when board space is at a premium. Two simplified examples of TVS applications are illustrated below.
Computer Interface Protection
A KEYBOARD TERMINAL PRINTER ETC. B I/O C D FUNCTIONAL DECODER
GND MMBZ5V6ALT1 THRU MMBZ33VALT1
Microprocessor Protection
VDD VGG ADDRESS BUS
RAM
ROM
DATA BUS I/O CPU CLOCK CONTROL BUS MMBZ5V6ALT1 THRU MMBZ33VALT1
GND MMBZ5V6ALT1 THRU MMBZ33VALT1
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MMBZXXXALT1 Dual Common Anode Series INFORMATION FOR USING THE SOT-23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process.
0.037 0.95
0.037 0.95
0.079 2.0 0.035 0.9 0.031 0.8
inches mm
SOT-23 SOT-23 POWER DISSIPATION The power dissipation of the SOT-23 is a function of the drain pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by T J(max) , the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOT-23 package, PD can be calculated as follows:
PD = TJ(max) - TA RJA
SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. * The soldering temperature and time shall not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.
The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 225 milliwatts.
PD = 150C - 25C 556C/W = 225 milliwatts
The 556C/W for the SOT-23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT-23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal CladTM. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint.
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MMBZXXXALT1 Dual Common Anode Series
Transient Voltage Suppressors -- Surface Mount
24 & 40 Watts Peak Power
A L
3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.
BS
1 2
V
G C D H K J
DIM A B C D G H J K L S V
INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236
MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60
STYLE 12: PIN 1. CATHODE 2. CATHODE 3. ANODE
CASE 318-08 LOW PROFILE SOT-23 PLASTIC
(Refer to Section 10 of the TVS/Zener Data Book (DL150/D) for Surface Mount, Thermal Data and Footprint Information.)
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MMBZXXXALT1 Dual Common Anode Series
Notes
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MMBZXXXALT1 Dual Common Anode Series
Thermal Clad is a trademark of the Bergquist Company
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
North America Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor - European Support German Phone: (+1) 303-308-7140 (M-F 2:30pm to 5:00pm Munich Time) Email: ONlit-german@hibbertco.com French Phone: (+1) 303-308-7141 (M-F 2:30pm to 5:00pm Toulouse Time) Email: ONlit-french@hibbertco.com English Phone: (+1) 303-308-7142 (M-F 1:30pm to 5:00pm UK Time) Email: ONlit@hibbertco.com ASIA/PACIFIC: LDC for ON Semiconductor - Asia Support Phone: 303-675-2121 (Tue-Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong 800-4422-3781 Email: ONlit-asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-8549 Phone: 81-3-5487-8345 Email: r14153@onsemi.com Fax Response Line: 303-675-2167 800-344-3810 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative.
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1N6267A/D

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