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| QSL9 Transistors General purpose transistor (isolated transistor and diode) QSL9 A 2SB1709 and a RB461F are housed independently in a TSMT5 package. !Applications DC / DC converter Motor driver !External dimensions (Units : mm) QSL9 2.8 1.6 !Features 1) Tr : Low VCE(sat) Di : Low VF 2) Small package ROHM : TSMT5 (3) (4) 0.95 0.95 1.9 2.9 0.4 (2) (1) (5) 0.3 0.6 Each lead has same dimensions L09 !Structure Silicon epitaxial planar transistor Schottky barrier diode Abbreviated symbol !Equivalent circuit (5) (4) Di2 Tr1 (1) (2) (3) !Packaging specifications Type Package Marking Code Basic ordering unit(pieces) QSL9 TSMT5 L09 TR 3000 0 0.1 1.0MAX 0.16 0.85 0.7 1/4 QSL9 Transistors !Absolute maximum ratings (Ta=25C) Tr1 Symbol VCBO VCEO VEBO IC Collector current ICP Power dissipation Pc Junction temperature Tj Range of storage temperature Tstg 1 Single pulse, Pw=1ms. 2 Each terminal mounted on a recommended land. Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Limits -15 -12 -6 -1.5 -3 500 150 -40~+125 Unit V V V A A mW C C 1 2 Di2 Parameter Symbol Average rectified forward current IF Forward current surge peak (60HZ, 1) IFSM Reverse voltage (DC) VR Junction temperature Tj Range of storage temperature Tstg Limits 700 3 20 125 -40~+125 Unit mA A V C C !Electrical characteristics (Ta=25C) Tr1 Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. -12 -15 -6 - - - 270 - - Typ. - - - - - -110 - 400 12 Max. - - - -100 -100 -200 680 - - Unit V V V nA nA mV - MHz pF Conditions IC=-1mA IC=-10A IE=-10A VCB=-15V VEB=-6V IC=-500mA, IB=-25mA VCE=-2V, IC=-200mA VCE=-2V, IE=200mA, f=100MHz VCB=-10V, IE=0mA, f=1MHz Di2 Parameter Forward voltage Reverse current Symbol VF IR Min. - - Typ. - - Max. 490 200 Unit mV A IF=700mA VR=20V Conditions 2/4 QSL9 Transistors !Electrical characteristic curves Tr1 Ta=100C COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) BASE SATUATION VOLTAGE : VBE(sat) (V) 1000 10 IC/IB=20/1 VCE=-2V Pulsed 1 Ta=25C Ta=100C COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) VCE=-2V Pulsed 1 Ta=25C DC CURRENT GAIN : hFE Ta=25C Ta=-40C Ta=-40C VBE(sat) Pulsed 0.1 100 0.1 Ta=100C VCE(sat) IC/IB=50/1 0.01 Ta=25C Ta=-40C 0.01 IC/IB=20/1 IC/IB=10/1 10 0.001 0.01 0.1 1 10 0.001 0.001 0.01 0.1 1 10 0.001 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. Fig.2 Base-emitter saturation voltage collector current vs. collector current Fig.3 Collector-emitter saturation voltage vs. collector current 10 TRANSITION FREQUENCY : fT (MHz) 1000 VCE=-2V Pulsed 10000 COLLECTOR CURRENT : IC (A) Ta=25C VCE=-2V f=100MHz SWITCHING TIME : (ns) Ta=25C VCE=-5V f=100MHz 1000 1 0.1 Ta=100C Ta=25C 100 100 tstg tf Ta=-40C 0.01 10 tdon tr 0.001 0 0.5 1 1.5 10 0.001 0.01 0.1 1 10 1 0.001 0.01 0.1 1 10 BASE TO EMITTER CURRENT : VBE(on) (V) EMITTER CURRENT : IE (A) COLLECTOR CURRENT : IC (A) Fig.4 Grounded emitter propagation Fig.5 Gain bandwidth product Fig.6 Switching time characteristics vs. emitter current EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1000 Ta=25C IE=0mA f=1MHz 100 Cib Cob 10 1 0.1 1 10 100 EMITTER TO BASE VOLTAGE : VEB(V) COLLECTOR TO BASE VOLTAGE : VCB(V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 3/4 QSL9 Transistors Di2 10 1000m 100m 1 C 25 FORWARD CURRENT : IF (A) REVERSE CURRENT : IR (A) Ta=125C 10m 1m 100 Ta=25C 100m Ta =1 Ta = 25 C 10m Ta =- 25 C 10 1 0.1 Ta=-25C 1m 0.1m 0 0.1 0.2 0.3 0.4 0.5 0.6 FORWARD VOLTAGE : VF (V) 0 10 20 30 40 50 60 70 REVERSE VOLTAGE : VR (V) Fig.9 Forward characteristics Fig.10 Reverse characteristics 4/4 |
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