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Philips Semiconductors RF Communications Products
Product specification
Low voltage LNA, mixer and VCO -- 1GHz
SA620
DESCRIPTION
The SA620 is a combined RF amplifier, VCO with tracking bandpass filter and mixer designed for high-performance low-power communication systems from 800-1200MHz. The low-noise preamplifier has a 1.6dB noise figure at 900MHz with 11.5dB gain and an IP3 intercept of -3dBm at the input. The gain is stabilized by on-chip compensation to vary less than 0.2dB over -40 to +85C temperature range. The wide-dynamic-range mixer has an 9dB noise figure and IP3 of -6dBm at the input at 900MHz. An external LO can be used in place of the internal VCO for improved mixer input IP3 and a 3mA reduction in current. The chip incorporates a through-mode option so the RF amplifier can be disabled and replaced by an attenuator (S21 = -7.5dB). This is useful for improving the overall dynamic range of the receiver when in an overload situation. The nominal current drawn from a single 3V supply is 10.4mA and 7.2mA in the thru-mode. Additionally, the VCO and Mixer can be powered down to further reduce the supply current to 1.2mA.
FEATURES
* Low current consumption: 10.4mA nominal,
7.2mA with thru-mode activated
PIN CONFIGURATION
DK Package
LNA ENABLE 1 LNA GND 2 LNA IN 3 LNA GND 4 LNA GND 5 20 VCC 19 LNA GND 18 LNA OUT 17 LNA BIAS 16 MIXER IN 15 MIXER GND 14 MIXER BYPASS 13 MIXER OUT 12 OSC GND 11 VCO OUT
* Outstanding noise figure: 1.6dB for the
amplifier and 9dB for the mixer at 900MHz
* Excellent gain stability versus temperature
and supply voltage
* Switchable overload capability * Independent LNA, mixer and VCO power
down capability
OSC GND 6 MIXER PWRDN OSC PWRDN 7 8
* Internal VCO automatic leveling loop * Monotonic VCO frequency vs control
voltage
OSC1 9 OSC2 10
APPLICATIONS
* 900MHz cellular front-end * 900MHz cordless front-end * Spread spectrum receivers * RF data links * UHF frequency conversion * Portable radio
TEMPERATURE RANGE -40 to +85C ORDER CODE SA620DK DWG # 1563
ORDERING INFORMATION
DESCRIPTION 20-Pin Plastic Shrink Small Outline Package (Surface-mount, SSOP)
BLOCK DIAGRAM
VCC LNA GND LNA OUT LNA BIAS MIXER IN MIXER GND MIXER BYPASS MIXER OUT OSC GND VCO OUT
20
19
18
17
16
15
14
13
12
11
RF
IF
LO TRACKING BANDPASS FILTER
LNA
AUTOMATIC LEVELING LOOP
VCO
1
LNA ENABLE
2
LNA GND
3
LNA IN
4
LNA GND
5
LNA GND
6
OSC GND
7
MIXER PWRDN
8
OSC PWRDN
9
OSC1
10
OSC2
December 15, 1993
2
853-1725 11658
Philips Semiconductors RF Communications Products
Product specification
Low voltage LNA, mixer and VCO -- 1GHz
SA620
ABSOLUTE MAXIMUM RATINGS
SYMBOL VCC VIN PD TJMAX PMAX TSTG Supply voltage1 PARAMETER RATING -0.3 to +6 -0.3 to (VCC + 0.3) air)2 980 150 +20 -65 to +150 mW C dBm C UNITS V V
Voltage applied to any other pin Power dissipation, TA = 25C (still 20-Pin Plastic SSOP
Maximum operating junction temperature Maximum power input/output Storage temperature range
NOTE: 1. Transients exceeding 8V on VCC pin may damage product. 2. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance, JA: 20-Pin SSOP = 110C/W
RECOMMENDED OPERATING CONDITIONS
SYMBOL VCC TA TJ Supply voltage Operating ambient temperature range Operating junction temperature PARAMETER RATING 2.7 to 5.5 -40 to +85 -40 to +105 UNITS V C C
DC ELECTRICAL CHARACTERISTICS
VCC = +3V, TA = 25C; unless otherwise stated. SYMBOL PARAMETER TEST CONDITIONS MIN LNA enable input high LNA enable input low ICC Supply current VCO power-down input low Mixer power-down input low Full chip power-down VT VIH VIL IIL IIH VLNA-IN VLNA-OU
T
LIMITS TYP 10.4 7.2 7.4 7.4 1.2 1.2 1.5 1.8 VCC 0.8 0 0 0.78 2.1 2.1 0.94 1 1 MAX
UNITS
mA mA mA mA mA V V V A A V V V V
Enable logic threshold Logic 1 level Logic 0 level Enable input current Enable input current LNA input bias voltage
voltageNO TAG RF amp on RF amp off Enable = 0.4V Enable = 2.4V Enable = 2.4V Enable = 2.4V Enable = 2.4V
2.0 -0.3 -1 -1
LNA output bias voltage LNA bias voltage Mixer RF input bias voltage
VB VMX-IN
NOTE: 1. The ENABLE input must be connected to a valid logic level for proper operation of the SA620 LNA.
December 15, 1993
3
Philips Semiconductors RF Communications Products
Product specification
Low voltage LNA, mixer and VCO -- 1GHz
SA620
AC ELECTRICAL CHARACTERISTICS
VCC = +3V, TA = 25C; Enable = +3V; unless otherwise stated. SYMBOL PARAMETER TEST CONDITIONS -3 S21 S21 S21/T S21/T S21/f S12 S11 S22 P-1dB IP3 NF tON tOFF VGC PGC S11M NFM P-1dB IP3M IP2INT PRFM-IF PLO-IF PLO-RFM PLO-RF PVCO Amplifier gain Amplifier gain in through mode Gain temperature sensitivity in pwr-dwn mode Gain temperature sensitivity enabled Gain frequency variation Amplifier reverse isolation Amplifier input match1 match1 900MHz Enable = 0.4V, 900MHz 900MHz 900MHz 800MHz - 1.2GHz 900MHz 900MHz 900MHz 900MHz 900MHz 900MHz See Figure 1 See Figure 1 fS = 0.9GHz, fLO = 0.8GHz, fIF = 100MHz fS = 0.9GHz, fLO = 0.8GHz, fIF = 100MHz 900MHz 900MHz 900MHz f2-f1 = 1MHz, 900MHz 900MHz 900MHz 900MHz 900MHz 900MHz 900MHz 300 (min) Offset = 60kHz -105 -7.5 7.5 14.5 1.5 -4.5 1.3 10 -9 LIMITS TYP 11.5 -7.5 -0.014 0.003 0.01 -20 -10 -12 -16 -3 1.6 50 5 16 3 -10 9 -13 -6 12 -20 -25 -30 -45 -16 1200 (max) -4.5 10.5 17.5 4.5 -1.5 1.9 +3 13 -6 dB dB dB/C dB/C dB/MHz dB dB dB dBm dBm dB s s dB dB dB dB dBm dBm dBm dB dBm dBm dBm dBm MHz dBc/Hz UNITS
Amplifier output
Amplifier input 1dB gain compression Amplifier input third order intercept Amplifier noise figure Amplifier turn-on time (Enable Lo Hi) Amplifier turn-off time (Enable Hi Lo) Mixer voltage conversion gain: RP = RL = 1k, Mixer power conversion gain: RP = RL = 1k, Mixer input match1 Mixer SSB noise figure Mixer input 1dB gain compression Mixer input third order intercept Mixer input second order intercept Mixer RF feedthrough LO feedthrough to IF LO to mixer input feedthrough LO to LNA input feedthrough VCO buffer out VCO frequency range VCO phase noise
NOTE: 1. Simple L/C elements are needed to achieve specified return loss.
December 15, 1993
4
Philips Semiconductors RF Communications Products
Product specification
Low voltage LNA, mixer and VCO -- 1GHz
SA620
LNA ENABLE C23 1F LNA IN C1 100pF 4.7nH 535 mils C22 0.44F/(VCC-1) L1 56nH R6 R = 9k x (VCC - 1) VCC C19 100pF C21 0.1F C20 100pF 1 2 3 4 5 6 7 8 9 10 LNA ENABLE LNA GND LNA IN LNA GND LNA GND OSC GND MIXER PD OSC PD OSC1 OSC2 SA620 VCO OUT (50) Vcc LNA GND LNA OUT LNA BIAS MIXER IN MIXER GND MIXER BYPASS MIXER OUT OSC GND VCO OUT 20 19 18 17 16 15 14 13 12 11 C16 5.6pF w = 15 mils L = 160 mils 4.7nH 535 mils w = 15 mils L = 260 mils 4.7nH 535 mils C18 2.2pF C17 100pF MIXER IN LNA OUT
C2 1.8pF w = 15 mils L = 260 mils C3 0.1F
C4 10F
C5 3.9pF
C13 12pF
L2 2.7nH
C14 1-5pF
VCC C15 0.1F
VCC C6 GND 100pF
L3 2.7nH D1 SMV 1204 - 099 Alpha Industries
C7 3.3pF
C9 100pF 4.7nH 535 mils C10 100pF VCC R3 22 MIXER OUT (1k, 83MHz) C11 1000pF
L4 150nH
C12 10pF
MIXER OUT (50, 83MHz)
R2 10k
V_CONTROL (0 to VCC)
R1 10k C8 0.1F
R4 1k
R5 51
Figure 1. A Complete LNA, Mixer and VCO
CIRCUIT TECHNOLOGY LNA
Impedance Match: Intrinsic return loss at the input and output ports is 7dB and 9dB, respectively. With no external matching, the associated LNA gain is 10dB and the noise figure is 1.4dB. However, the return loss can be improved at 900MHz using suggested L/C elements (Figure NO TAG) as the LNA is unconditionally stable. Noise Match: The LNA achieves 1.6dB noise figure at 900MHz when S11 = -10dB. Further improvements in S11 will slightly increase the NF and S21. Thru-Mode: A series switch can be activated to feed RF signals from LNA input to output with an attenuator (S21 = -7.5dB). As a result, the power handling is greatly improved and current consumption is decreased by 3.2mA as well. However, if this mode is not required, C23 and R6 can be deleted. Temperature Compensation: The LNA has a built-in temperature compensation scheme to reduce the gain drift to 0.003dB/C from -40C to +85C. Supply Voltage Compensation: Unique circuitry provides gain stabilization over wide supply voltage range. The gain changes no more than 0.5dB when VCC increases from 3V to 5V.
Mixer
Input Match: The mixer is configured for maximum gain and best noise figure. The user needs to supply L/C elements to achieve this performance. Mixer Bypass: To optimize the IP3 of the mixer input, one must adjust the value of C14 for the given board layout. The value typically lies between 1 and 5pF. Once a value if selected, a fixed capacitor can be used. Further improvements in mixer IP3 can be achieved by inserting a resistive loss at the mixer input, at the expense of system gain and noise figure. Tracking Bandpass Filter: At the LO input port of the mixer there is a second-order bandpass filter (approx. 50MHz bandwidth) which will track the VCO center frequency. The result is the elimination of low frequency noise injected into the mixer LO port without the need for an external LO filter. Power Down: The mixer can be disabled by connecting Pin 7 to ground. If a Schottky diode is connected between Pin 1 (cathode) and Pin 7 (anode), the LNA disable signal will control both LNA and mixer simultaneously When the mixer is disabled, 3mA is saved. Test Port: Resistor R5 can be substituted with an external test port of 50 input impedance. Since R5 and MIXER OUT have
the same output power, the result is a direct power gain measurement.
VCO
Automatic Leveling Loop: An on-chip detector and loop amplifier will adjust VCO bias current to regulate the VCO amplitude regardless of the Q-factor (>10) of the resonator and varactor diode. However, the real current reduction will not occur until the VCO frequency falls below 500MHz. For a typical resonator the steady-state current is 3mA at 800MHz. Buffered VCO Output: The VCO OUT (Pin 11) signal can drive an external prescaler directly (see also the Philips SA7025 low voltage, fractional-N synthesizer). The extracted signal levels need to be limited to -16dBm or less to maintain mixer IIP3. Phase Noise: If close-in phase noise is not critical, or if an external synthesizer is used, C4 (Pin 8) can be decreased to a lower value. Power-Down: The VCO can be disabled by connecting Pin 8 to ground. If a Schottky diode is connected between Pin 1 (cathode) and Pin 8 (anode), the LNA disable signal will control both LNA and VCO simultaneously. When the VCO is disabled, 3mA is saved.
December 15, 1993
5
Philips Semiconductors RF Communications Products
Product specification
Low voltage LNA, mixer and VCO -- 1GHz
SA620
TYPICAL PERFORMANCE CHARACTERISTICS
CH1
S11
1
U
FS
4:
30.707
-24.89
5.86 pF 1100.000 000 MHz 1: 33.184 -39.105 800 MHz 31.879 -33.66 900 MHz 30.594 -28.695 1 GHz
2: 3:
START
800.000 000
MHz
STOP
1200.000 000
MHz
CH1
S22
1
U
FS
4:
39.811
-22.93
6.31 pF
1100.000 000 MHz 1: 48.164 -35.754 800 MHz 44.574 -31.246 900 MHz 42.068 -25.799 1 GHz
2: 3:
START
800.000 000
MHz
STOP
1200.000 000
MHz
Figure 2. LNA Input and Output Match (at Device Pin)
December 15, 1993
6
Philips Semiconductors RF Communications Products
Product specification
Low voltage LNA, mixer and VCO -- 1GHz
SA620
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
CH1
S21
4
U
FS
4:
2.7788 U
-60.419 1100.000 000 MHz 1: 3.8929U -2.5227 800 MHz 3.3016U -22.365 900 MHz 3.0718U -41.955 1 GHz
2: 3:
START
800.000 000
MHz
STOP
1200.000 000
MHz
CH1
S12
100 mU FS
4:
92.09 mU
-82.944 1100.000 000 MHz 1: 77.911 mU -41.727 800 MHz 84.28 mU -55.909 900 MHz 89.053 mU -70.55 1 GHz
2: 3:
START
800.000 000
MHz
STOP
1200.000 000
MHz
Figure 3. LNA Transmission and Isolation Characteristics (at Device Pin)
December 15, 1993
7
Philips Semiconductors RF Communications Products
Product specification
Low voltage LNA, mixer and VCO -- 1GHz
SA620
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
CH1 S11 1 U FS 4: 8.7959 12.241 1.7711 nH 1100.000 000 MHz
1:
7.2375 5.1895 800 MHz 7.8293 7.6104 900 MHz 8.1147 9.9258 1 GHz
2:
3:
START
800.000 000
MHz
STOP
1200.000 000
MHz
Figure 4. Mixer RF Input Match (at Device Pin)
December 15, 1993
8
Philips Semiconductors RF Communications Products
Product specification
Low voltage LNA, mixer and VCO -- 1GHz
SA620
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
LNA Gain (S21) In Through Mode vs. Frequency (VCC = 3V)
CH1 S 21 log MAG 1 dB/ REF -5 dB CH1 S 11
Mixer RF Input Match vs. Frequency (VCC = 3V)
log MAG 2 dB/ REF -5 dB
-40C 25C 85C
-40C 25C 85C
START 800.000 000 MHz
STOP 1 200. 000 000 MHz
START 800.000 000 MHz
STOP 1 200. 000 000 MHz
LNA Gain (S21) vs. Frequency (VCC = 3V)
CH1 S 21 log MAG 1 dB/ REF 10 dB CH1 S 12
LNA Isolation (S12) vs. Frequency (VCC = 3V)
log MAG 5 dB/ REF -10 dB
-40C 25C 85C
85C 25C -40C
START 800.000 000 MHz
STOP 1 200. 000 000 MHz
START 800.000 000 MHz
STOP 1 200. 000 000 MHz
CH1 S 11
LNA Input Match (S11) vs. Frequency (VCC = 3V)
log MAG 1 dB/ REF -10 dB CH1 S 22
LNA Output Match (S22) vs. Frequency (VCC = 3V)
log MAG 3 dB/ REF -10 dB
-40C 25C 85C -40C 25C 85C
START 800.000 000 MHz
STOP 1 200. 000 000 MHz
START 800.000 000 MHz
STOP 1 200. 000 000 MHz
December 15, 1993
9
Philips Semiconductors RF Communications Products
Product specification
Low voltage LNA, mixer and VCO -- 1GHz
SA620
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
LNA Gain (Enabled) vs. Supply Voltage
14.00 TEMPERATURE (C) 4.00 -40 LNA GAIN (dB) 11.00 2.00 25 85 8.00 LNA IP3 (dB) 0.00 -2.00 -4.00 -6.00 5.00 2.5 3 3.5 4 VCC (V) 4.5 5 5.5 -10.00 2.5 3 3.5 4 VCC (V) 4.5 5 5.5 -8.00
LNA IP3 (Enabled) vs. Supply Voltage
LNA Gain (Disabled) vs. Supply Voltage
0.00 TEMPERATURE (C) -40 LNA GAIN (dB) -5.00 LNA NF (dB) 25 85 -10.00
LNA Noise Figure (Enabled) vs. Supply Voltage
2.50
2.00
1.50
1.00
0.50 -15.00 2.5 3 3.5 4 VCC (V) 4.5 5 5.5
0.00 2.5 3 3.5 4 VCC (V) 4.5 5 5.5
Mixer Power Gain vs. Supply Voltage
3.5 3.0 MIXER GAIN (dB) 2.5 2.0 1.5 1.0 0.5 0.0 2.5 3 3.5 4 VCC (V) 4.5 5 5.5 6.0 2.5 7.0 TEMPERATURE (C) -40 11.0 25 MIXER NF (dB) 85 10.0 9.0 8.0 12.0
Mixer Noise Figure vs. Supply Voltage
3
3.5
4 VCC (V)
4.5
5
5.5
LO to RF In Leakage vs. Supply Voltage
-40 -41 LO TO MIXER IN (dBm) -42 -43 -44 -45 -46 -47 -48 -49 -50 2.5 3 3.5 4 VCC (V) 4.5 5 5.5 LO TO MIXER IN (dBm) -40 25 85 TEMPERATURE (C) -30 -31 -32 -33 -34 -35 -36 -37 -38 -39 -40 2.5
LO to Mixer In Leakage vs. Supply Voltage
3
3.5
4 VCC (V)
4.5
5
5.5
December 15, 1993
10
Philips Semiconductors RF Communications Products
Product specification
Low voltage LNA, mixer and VCO -- 1GHz
SA620
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
LO to IF Leakage vs. Supply Voltage
-25 -26 -27 -28 LO to IF (dBm) -29 -30 -31 -32 -33 -34 -35 2.5 3 3.5 4 VCC (V) 4.5 5 5.5 25 85 TEMPERATURE (C) RF FEEDTHROUGH (dB) -40
Mixer RF Feedthrough Leakage vs. Supply Voltage
-15 -16 -17 -18 -19 -20 -21 -22 -23 -24 -25 2.5 3 3.5 4 VCC (V) 4.5 5 5.5
VCO Output Power vs. Supply Voltage
-10 -11 -12 -13 VCO OUT (dBm) -14 -15 -16 -17 -18 -19 -20 2.5 3 3.5 4 VCC (V) 4.5 5 5.5 TEMPERATURE (C) -40 25 85
December 15, 1993
11
Philips Semiconductors RF Communications Products
Product specification
Low voltage LNA, mixer and VCO -- 1GHz
SA620
December 15, 1993
12

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