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| Datasheet File OCR Text: |
| SD1727 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1727 is a Common Emitter Device Designed for High Linearity Class A/AB HF Applications. PACKAGE STYLE .550 4L STUD FEATURES INCLUDE: * Gold Metalization * Emitter Ballasting MAXIMUM RATINGS IC VCB PDISS TJ T STG JC 10 A 110 V 233 W @ TC = 25 OC -65 OC to +200 OC -65 OC to +150 OC 0.75 OC/W 1 = COLLECTOR 3 = BASE 2 &4 =EMITTER CHARACTERISTICS SYMBOL BV CEO BV CES BV CBO BV EBO ICES ICEO hFE Cob PG IMD3 C IC = 100 mA IC = 100 mA IC = 100 mA IE = 10 mA VCE = 60 V VCE = 30 V VCE = 6.0 V VCB = 50 V VCE = 50 V TC = 25 OC TEST CONDITIONS MINIMUM TYPICAL MAXIMUM 55 110 110 4.0 5.0 5.0 UNITS V V V V mA mA --pF dB dBc % REV. A IC = 1.4 A f = 1.0 MHz 15 50 220 14 Icq = 100 mA Pout = 150 W (PEP) f = 30 MHz 37 -37 45 -30 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. 1/1 ERROR! REFERENCE SOURCE NOT FOUND. A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1202 * TELEX: 18-2651 * FAX (818) 765-3004 |
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