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| Gabellichtschranke Slotted Interrupter Vorlaufige Daten / Preliminary Data Pin 2 Pin 3 SFH 9500 6.2 6.0 Pin 1 13.65 13.25 5.2 4.9 Pin 4 6.9 6.7 5.1 4.9 Optical axis 10.2 9.8 (8) 2.05 1.85 0...0.1 6.1 5.9 (15.6) 0.6 0.4 2.54 2 Circuitry 0.8 0.6 (2.2) 0.5 0.3 0.6 0.4 1.1 0.9 4.0 3.8 3 7.1 6.9 1 Emitter Sensor 4 GPX06988 Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Geeignet fur Oberflachenmontage (SMT) q Kompaktes Gehause q GaAs-IR-Sendediode (940 nm) q Si-Fototransistor mit Tageslichtsperrfilter q Mit Positionspin q Geeignet fur "pick and place" Montage q Hohe Genauigkeit (Schlitzbreite 0,5 mm) q Groe Spaltbreite zwischen Sender und Empfanger (5 mm) q Hohe Stabilitat auf PCB durch groe Bauelementabmessung (6,8 mm) Anwendungen q Geschwindigkeitsuberwachung q Motorsteuerung q Uberwachung des Papiervorschubs in Druckern, Kopier- und Faxgeraten q Speicherlaufwerke q Steuerung des Druckkopfes in Druckern q Munzdetektion q Optoelektronische Schalter Semiconductor Group 1 Features q Suitable for surface mounting (SMT) q Compact type q GaAs infrared emitter (940 nm) q Silicon phototransistor detector with daylight-cutoff filter q With positioning pin q Suitable for pick and place q High sensing accuracy (slit width: 0.5 mm) q Wide gap between emitter and detector (5 mm) q High stability on pcb due to large width of device (6.8 mm) Applications q Speed control q Motor control q Monitoring of paper feed in printers, copiers, facsimiles q Disk drives q Control of print head in printers q Coin detection q Optoelectronic switches 1998-10-14 fpx06988 SFH 9500 Typ Type SFH 9500 Bestellnummer Ordering Code on request Gehause Package Schwarzes Polykarbonat Plastikgehause, Anschlusse im 2.54-mm Raster, Senderseite durch Buchstaben "E", Empfangerseite durch Buchstaben "S" gekennzeichnet, Kathode / Transistoremitter durch schrage Kante gekennzeichnet Black polycarbonate plastic material housing, solder tabs 2.54-mm (1/10") spacing, emitter side marked with letter "E", sensor side marked with letter "S", cathode / emitter of transistor marked with edge at an angle Grenzwerte TA = 25 C Maximum Ratings Bezeichnung Description Sender (GaAs-Diode) Emitter (GaAs Diode) Sperrspannung Reverse voltage Durchlastrom Forward current Verlustleistung Power dissipation Warmewiderstand Thermal resistance Symbol Symbol Wert Value Einheit Unit VR IF (DC) Ptot RthJA 5 60 100 280 V mA mW K/W Semiconductor Group 2 1998-10-14 SFH 9500 Grenzwerte TA = 25 C (cont'd) Maximum Ratings Bezeichnung Description Empfanger (Si-Fototransistor) Detector (Silicon Phototransistor) Kollektor-Emitter-Spannung Collector-emitter voltage Kollektor-Emitter-Spannung, (t 2 min) Collector-emitter voltage Emitter-Kollektor-Spannung Emitter-collector voltage Kollektorstrom Collector current Verlustleistung Total power dissipation Warmewiderstand Thermal resistance Gabellichtschranke Slotted Interrupter Lagertemperatur Storage temperature range Betriebstemperatur Operating temperature range Elektrostatische Entladung Electrostatic discharge Symbol Symbol Wert Value Einheit Unit VCE VCE VEC IC Ptot RthJA 30 70 7 50 150 280 V mA mW K/W Tstg Top ESD - 40 ... + 85 - 40 ... + 85 2 C kV Semiconductor Group 3 1998-10-14 SFH 9500 Kennwerte TA = 25 C Characteristics Bezeichnung Description Sender (GaAs-Diode) Emitter (GaAs Diode) Wellenlange der Strahlung Wavelength of peak emission Durchlaspannung Forward voltage IF = 20 mA, tp = 20 ms Sperrstrom Reverse current VR = 5 V Kapazitat Capacitance VR = 0 V, f = 1 MHz Empfanger (Si-Fototransistor) Detector (Silicon Phototransistor) Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spectr. Bereich der Fotoempfindlichkeit Spectral range of sensitivity S = 10 % of Smax Kapazitat Capacitance VCE = 0 V, f = 1 MHz, E = 0 Dunkelstrom, VCE = 20 V Dark current Symbol Symbol Wert Value Einheit Unit peak VF 940 1.2 ( 1.4) nm V IR 0.01 ( 1) A C0 16 pF S max 920 840 ... 1080 nm nm CCE 6.5 pF ICEO 2 ( 50) nA Semiconductor Group 4 1998-10-14 SFH 9500 Kennwerte TA = 25 C (cont'd) Characteristics Bezeichnung Description Gabellichtschranke Slotted interrupter Kollektor-Emitterstrom Collector-emitter current IF = 20 mA; VCE = 5 V Kollektor-Emitter-Sattigungsspannung Collector-emitter-saturation voltage IF = 20 mA; IC = 0.3 mA Anstiegs- und Abfallzeit Rise and fall time VCC = 5 V, IC = 1 mA, RL = 1 k Symbol Symbol Wert Value Einheit Unit ICE >1 mA VCE sat 0.4 V tr tf 13 17 s s Lothinweise Soldering conditions Bauform Type Reflowlotung Reflow soldering Peak temp. of soldering zone SFH 9500 245 C ... 215 C Preheating 150 C Max. time in peak zone 10 s ... 40 s approx. 1 min. - Tauch-, Schwalllotung Dip, wave soldering Semiconductor Group 5 1998-10-14 SFH 9500 Forward current IF = f (VF) Single pulse, tp = 20 s F 10 4 mA 10 3 OHFD00367 Max. permissible forward current IF = f (TA) 90 OHF00372 Dark current ICEO= f (TA) VCE = 20 V, E = 0 CEO 10 3 nA OHF00380 F mA 70 10 2 R thJA = 280 K/W 60 50 40 10 2 10 1 10 1 10 0 30 10 0 10 -1 20 10 10 -2 0 0.5 1 1.5 2 2.5 3 V VF 4 0 10 -1 0 20 40 60 80 C TA 120 0 20 40 60 80 C 100 TA Total power dissipation for emitter and detector Ptot= f (TA) 160 OHF00410 Detector P tot 140 120 100 80 60 40 20 0 Emitter 0 20 40 60 80 C 100 TA Semiconductor Group 6 1998-10-14 |
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