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Product Description
Sirenza Microdevices' SHF-0289 is a high performance AlGaAs/ GaAs Heterostructure FET (HFET) housed in a low-cost surfacemount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity. Output power at 1dB compression for the SHF-0289 is +31dBm when biased for Class AB operation at 8V,250mA. The +46 dBm third order intercept makes it ideal for high dynamic range, high intercept point requirements. It is well suited for use in both analog and digital wireless communication infrastructure and subscriber equipment including 3G, cellular, PCS, fixed wireless, and pager systems.
SHF-0289
0.05 - 6 GHz, 1.0 Watt GaAs HFET
Gain, Gmax (dB)
35 30 25 20 15 10 5 0 -5 0
Typical Gain Performance (8V,250mA)
Gmax
Product Features * +31 dBm Output Power at 1dB Compression * +46 dBm Output IP3 * High Drain Efficiency * 16 dB Gain at 900 MHz (Application circuit) * 14.5 dB Gain at 1960 MHz (Application circuit) * See App Note AN-032 for circuit details Applications * Analog and Digital Wireless Systems * 3G, Cellular, PCS * Fixed Wireless, Pager Systems
Test Frequency [1] = 100% Tested U nits Min. Typ. Max.
Gain
1 2 3 4 5 6 7 8
Frequency (GHz)
Symbol
D evice C haracteristics, T = 25C VDS=8V, IDQ=250mA
Gmax S 21 G OIP3 P 1dB IDSS gm VP BVGS BVGD Rth
Maxi mum Avai lable Gai n ZS=ZS*, ZL=ZL* Inserti on Gai n ZS=ZL= 50 Ohms Power Gai n ZS=ZSOPT , ZL=ZLOPT Output Thi rd Order Intercept Poi nt ZS=ZSOPT , ZL=ZLOPT , POUT= +16 dBm per tone Output 1dB C ompressi on Poi nt ZS=ZSOPT, ZL=ZLOPT Saturated D rai n C urrent VDS= VDSP, VGS= 0V Tranconductance: VDS= VDSP, VGS= -0.25V Pi nch-Off Voltage: VDS = 2.0V, IDS = 1.2mA Gate-to-Source Breakdown Voltage IGS = 2.4mA, drai n open Gate-to-D rai n Breakdown Voltage IGD = 2.4mA, VGS = -5.0V Thermal Resi stance, juncti on-to-lead
f = 900 MHz f = 1960 MHz f = 900 MHz [1] f = 1960 MHz f = 900 MHz f = 1960 MHz f = 900 MHz f = 1960 MHz f = 900 MHz f = 1960 MHz
dB dB dB dB dB m dB m dB m dB m dB m dB m mA mS
16.7 408 288 -3.0 -
23 20 18.5 12.5 16.0 14.4 46 44.6 30.7 31.4 588 396 -1.9 -17 -22 20
20.3 768 504 -1.0 -15 -17 -
[1] [1] [1]
o
V V V C /W
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc. All worldwide rights reserved.
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-101241 Rev B
1
SHF-0289 1 Watt HFET Absolute Maximum Ratings
Operation of this device beyond any one of these parameters may cause permanent damage. MTTF is inversely proportional to the device junction temperature. For junction temperature and MTTF considerations the operating conditions should also satisfy the following experssions: PDC - POUT < (TJ - TL) / RTH where: PDC = IDS * VDS (W) POUT = RF Output Power (W) TJ = Junction Temperature (C) TL = Lead Temperature (pin 4) (C) RTH = Thermal Resistance (C/W)
Parameter Drain Current Forward Gate Current Reverse Gate Current Drain-to-Source Voltage Gate-to-Source Voltage RF Input Power Operating Temperature Storage Temperature Range Power Dissipation Channel Temperature Symbol IDS IGSF IGSR VDS VGS PIN TOP Tstor PDISS TJ Value IDSS 2.4 2.4 +12 <-5 or >0 400 -40 to +85 -40 to +175 7.0 +175 Unit mA mA mA V V mW C C W C
Typical Performance - Engineering Application Circuits (See App Note AN-032)
Freq (MH z ) 900 1960 2140 2450 VDS (V) 8 8 8 8 IDQ (mA) 250 250 250 250 P1dB OIP3* (dB m) (dB m) 30.7 31.4 31.8 30.7 46 44.5 44.5 47 Gain (dB ) 16.0 14.5 13.2 11.1 S11 (dB ) -23 -21 -25 -15 S 22 (dB ) -14 -8 -10 -7 NF (dB ) 4.6 3.9 3.9 4.1 ZSOPT ( ) 44.7 + j31.2 13.5 + j7.5 18.2 + j5.3 18.5 + j3.5 ZLOPT ( ) 40.9 + j12.0 11.0 + j3.0 20.9 + j2.5 42.5 - j9.5
* POUT= +16dBm per tone, 1MHz tone spacing
Data above represents typical performance of the application circuits noted in Application Note AN-032. Refer to the application note for additional RF data, PCB layouts, and BOMs for each application circuit. The application note also includes biasing instructions and other key issues to be considered. For the latest application notes please visit our site at www.sirenza.com or call your local sales representative.
D
G
Z
LOPT
ZSOPT
S
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-101241 Rev B
2
SHF-0289 1 Watt HFET
De-embedded S-Parameters (ZS=ZL=50 Ohms, VDS=8V, IDS=250mA, 25 C)
35
Gain & Isolation
Gmax Isolation
-10 -15 -20 -25 -30 -35 -40 -45 -50
Gain, Gmax (dB)
30 25 20 15 10 5 0 -5 0 1
Isolation (dB)
Gain
2
3
4
5
6
7
8
Frequency (GHz) S11 vs Frequency
1.0 6 GHz 0.5 4 GHz 0.2 3 GHz 3 GHz 0.0 2 GHz 0.2 0.5 1.0 2.0 5.0 inf 0.0 0.2 4 GHz 2 GHz 0.5 1 GHz S22 0.2 1 GHz S11 0.5 1.0 2.0 0.5 1.0 2.0 5.0 0.2 5.0 1.0 2.0 5.0 inf 8 GHz 6 GHz 5.0 0.2 5.0 2.0 0.5 8 GHz 2.0
S22 vs Frequency
1.0
Note: S-parameters are de-embedded to the device leads with Z S=Z L=50. The data represents typical performace of the device. De-embedded s-parameters can be downloaded from our website (www.sirenza.com).
0.7
DC-IV Curves
0.6
0.5
IDS (A)
0.4
0.3
VGS = -2.0 to 0V, 0.2V steps T=25 C
0.2
0.1
0 0 1 2 3
VDS (V)
4
5
6
7
8
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-101241 Rev B
3
Caution: ESD sensitive
Appropriate precautions in handling, packaging and testing devices must be observed.
SHF-0289 1 Watt HFET
Part Number Ordering Information
Part Number SHF-0289 Reel Siz e 7" Devices/Reel 1000
Pin Description
Pin #
1 2 3 4
Function
Gate Source Drain Source RF Input
Description
Connection to ground. Use via holes to reduce lead inductance. Place vias as close to ground leads as possible. RF Output Same as Pin 2
Part Symbolization The part will be symbolized with the "H2" designator and a dot signifying pin 1 on the top surface of the package.
Mounting and Thermal Considerations It is very important that adequate heat sinking be provided to minimize the device junction temperature. The following items should be implemented to maximize MTTF and RF performance. 1. Multiple solder-filled vias are required directly below the ground tab (pin 4). [CRITICAL] 2. Incorporate a large ground pad area with multiple plated-through vias around pin 4 of the device. [CRITICAL] 3. Use two point board seating to lower the thermal resistance between the PCB and mounting plate. Place machine screws as close to the ground tab (pin 4) as possible. [RECOMMENDED] 4. Use 2 ounce copper to improve the PCB's heat spreading capability. [RECOMMENDED]
Package Dimensions
.161
3
.177 .068
H2
.096
.016 .019 .118
4
1
2
.041
.059
.015
DIMENSIONS ARE IN INCHES
Recommended Mounting Configuration for Optimum RF and Thermal Performance
Ground Plane Plated Thru Holes (0.020" DIA) SHF-0x89
Machine Screws
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-101241 Rev B
4

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