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| Specification Comparison Vishay Siliconix SI4874BDY vs. Si4874DY Description: Package: Pin Out: N-Channel, 30-V (D-S) MOSFET SO-8 Identical Part Number Replacements: SI4874BDY-T1-E3 Replaces Si4874DY-T1-E3 SI4874BDY-T1-E3 Replaces Si4874DY-T1 Summary of Performance: The SI4874BDY is the replacement to the original Si4874DY; both parts perform identically, including limits to the parametric tables below. ABSOLUTE MAXIMUM RATINGS (TA = 25oC UNLESS OTHERWISE NOTED) Parameter Symbol SI4874BDY Si4874DY Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (MOSFET Diode Conduction) Power Dissipation TA = 25C TA = 70C Operating Junction & Storage Temperature Range Maximum Junction-to-Ambient TA = 25C TA = 70C VDS VGS ID IDM IS PD Tj & Tstg RthJA 30 +20 16 13 50 2.7 3.0 2.0 -55 to 150 41 30 +20 15 13 50 2.3 3.1 2.0 -55 to 150 40 W C C/W A V SPECIFICATIONS (TJ = 25OC UNLESS OTHERWISE NOTED) Parameter Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage VGS = 10 V VGS= 10 V VGS = 4.5 V VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD Qg Qgs Qgd Rg td(on) tr td(off) tf trr 30 0.0057 0.0068 65 0.74 21 9.5 6.5 0.9 16 10 57 15 40 1.1 25 0.007 0.0085 1.0 3.0 +100 1 40 0.0062 0.0083 40 0.73 35 12.2 11.4 NS 20 16 120 43 50 1.1 45 nC 30 25 180 65 80 ns 0.0075 0.010 1.0 NS +100 1 V nA A A S V Symbol Min SI4874BDY Typ Max Min Si4874DY Typ Max Unit Dynamic Total Charge* Gate-Source Charge Gate-Drain Charge Gate Resistance 0.4 1.4 25 20 90 25 60 Switching Turn-On Time* Turn-Off Time* Source-Drain Reverse Recovery Time NS denotes not specified in original datasheet * VGS = 5.0 V for the Si4874DY and 4.5 V for the SI4874BDY Document Number 74076 12-May-05 www.vishay.com |
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