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| Composite Transistors XN04602 Silicon NPN epitaxial planar transistor (Tr1) Silicon PNP epitaxial planar transistor (Tr2) For general amplification Features * Two elements incorporated into one package (Each transistor is separated) * Reduction of the mounting area and assembly cost by one half 4 2.90+0.20 -0.05 1.90.1 (0.95) (0.95) 5 6 1.50+0.25 -0.05 2.8+0.2 -0.3 Unit: mm 0.16+0.10 -0.06 3 2 1 (0.65) 0.30+0.10 -0.05 Basic Part Number of Element * 2SA0719 (2SA719) + 2SC1317 0.50+0.10 -0.05 10 1.1+0.2 -0.1 Absolute Maximum Ratings Ta = 25C Parameter Tr1 Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Peak collector current Tr2 Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Peak collector current Overall Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP VCBO VCEO VEBO IC ICP PT Tj Tstg Rating 60 50 5 0.5 1 -60 -50 -5 - 0.5 -1 300 150 -55 to +150 Unit V V V A A V V V A A mW C C 3 Tr2 1: Collector (Tr1) 2: Base (Tr2) 3: Emitter (Tr2) 0 to 0.1 1.1+0.3 -0.1 4: Collector (Tr2) 5: Base (Tr1) 6: Emitter (Tr1) Mini6-G1 Package Marking Symbol: 4A Internal Connection 4 5 6 Tr1 2 1 Note) The part number in the parenthesis shows conventional part number. Publication date: July 2002 SJJ00261AED 0.40.2 5 1 XN04602 Electrical Characteristics Ta = 25C 3C * Tr1 Parameter Collector to base voltage Collector to emittter voltage Emitter to base voltage Collector cutoff current DC current gain * Collector to emitter saturation voltage * Collector output capacitance Gain bandwidth product Note) *: Pulse measurement Symbol VCBO VCEO VEBO ICBO hFE1 hFE2 VCE(sat) Cob fT Conditions IC = 10 A, IE = 0 IC = 10 mA, IB = 0 IE = 10 A, IC = 0 VCB = 20 V, IE = 0 VCE = 10 V, IC = 150 mA VCE = 10 V, IC = 500 mA IC = 300 mA, IB = 30 mA VCB = 10 V, IE = 0, f = 1 MHz VCB = 10 V, IE = -50 mA, f = 200 MHz 85 40 0.35 6 200 0.6 15 V pF MHz Min 60 50 5 0.1 340 V A Typ Max Unit V * Tr2 Parameter Collector to base voltage Collector to emittter voltage Emitter to base voltage Collector cutoff current DC current gain * Collector to emitter saturation voltage * Base to emitter saturation voltage Collector output capacitance Gain bandwidth product Note) *: Pulse measurement * Symbol VCBO VCEO VEBO ICBO hFE1 hFE2 VCE(sat) VBE(sat) Cob fT Conditions IC = -10 A, IE = 0 IC = -10 mA, IB = 0 IE = -10 A, IC = 0 VCB = -20 V, IE = 0 VCE = -10 V, IC = -150 mA VCE = -10 V, IC = -500 mA IC = -300 mA, IB = -30 mA IC = -300 mA, IB = -30 mA VCB = -10 V, IE = 0, f = 1 MHz VCB = -10 V, IE = 50 mA, f = 200 MHz Min -60 -50 -5 Typ Max Unit V V - 0.1 A V V pF MHz 85 40 - 0.35 -1.1 6 200 340 - 0.6 -1.5 15 Common characteristics chart PT Ta 350 300 250 200 150 100 50 0 Total power dissipation PT (mW) 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (C) 2 SJJ00261AED XN04602 Characteristics charts of Tr1 IC VCE 0.8 0.7 IB = 10 mA 9 mA 8 mA 7 mA 6 mA 5 mA 4 mA IC I B 0.8 0.7 VCE(sat) IC 1 Collector current IC (A) Collector current IC (A) 0.6 0.5 0.4 0.3 0.2 0.1 0.6 0.5 0.4 0.3 0.2 0.1 Collector to emitter saturation voltage VCE(sat) (V) VCE = 10 V Ta = 25C IC / IB = 10 3 mA 0.1 Ta = 75C 2 mA 25C -25C Ta = 25C 0 0 2 4 6 8 10 12 0 0 2 4 6 8 10 12 0.01 0.01 0.1 1 10 100 Collector to emitter voltage VCE (V) Base current IB (mA) Collector current IC (mA) VBE(sat) IC 10 IC / IB = 10 250 hFE IC 100 Ta = 75C 200 25C 150 -25C Cob VCB Collector output capacitance Cob (pF) f = 1 MHz Ta = 25C Base to emitter saturation voltage VBE(sat) (V) 1 Ta = -25C 75C 25C DC current gain hFE 10 100 50 0.1 10 100 1 000 0 1 10 100 1 000 1 0 5 10 15 20 25 30 35 40 Collector current IC (mA) Collector current IC (mA) Collector to base voltage VCB (V) SJJ00261AED 3 XN04602 Characteristics charts of Tr2 IC VCE -800 Ta = 25C -700 - 0.9 mA IB = -1.0 mA - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA - 0.4 mA - 0.3 mA -400 - 0.2 mA -300 -200 -100 0 -2 -4 -6 -8 -10 -12 - 0.1 mA -120 -140 VCE = -10 V Ta = 25C IC I B -1 VCE(sat) IC Collector to emitter saturation voltage VCE(sat) (V) IC / IB = 10 Collector current IC (mA) -500 Collector current IC (mA) -600 -100 -80 -60 -40 -20 0 - 0.1 Ta = 75C -25C 25C 0 0 - 0.1 - 0.2 - 0.3 - 0.4 - 0.5 - 0.6 - 0.01 - 0.1 -1 -10 -100 Collector to emitter voltage VCE (V) Base current IB (mA) Collector current IC (mA) VBE(sat) IC -10 IC / IB = 10 400 hFE IC 100 VCE = -10 V 350 Ta = 75C 300 Cob VCB Collector output capacitance Cob (pF) f = 1 MHz Ta = 25C Base to emitter saturation voltage VBE(sat) (V) DC current gain hFE 250 200 150 100 50 0 -1 25C -25C -1 Ta = -25C 75C 25C 10 - 0.1 -1 -10 -100 -1 000 -10 -100 -1 000 1 0 -5 -10 -15 -20 -25 -30 -35 -40 Collector current IC (mA) Collector current IC (mA) Collector to base voltage VCB (V) 4 SJJ00261AED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL |
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