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2SK3759 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSY ) 2SK3759 unit*F** Switching Regulator Applications * * * * Low drain-source ON resistance: R DS (ON) = 0.75 (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 E (V DS = 500 V) A Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA) 3.84*}0.2 3.84*} .2 0 10.5 max 10.5 max 4.7 max 4.7max 1.3 6.6 max 6.6 max. 1.3 Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage DC (Note 1) Symbol V DSS V DGR V GSS ID IDP PD EA S IAR EAR Tch Tstg Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Rating 500 500 30 8 32 Unit V 15.6max. 15.6 max 2.7 13.4 min. 13.4 min 3.9 max 3.9 max. 1.5max 1.5 max 0.81 0.81 max 0.45 0.45 V V 2.7 2.54 2.54 1 2 3 2.7 74 48 8 7.4 150 -55~150 W mJ A mJ C C 1. 2. 3. Gate Drain(HEAT SINK) Source JEDEC JEITA TOSHIBA SC-46 TO-220AB *\ Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 1.68 83.3 Unit C/W C/W Weight : 2.0g(typ.) Note 1: Please use devices on conditions that the channel temperature is below 150C. Note 2: VDD = 90 V, Tch = 25C(initial), L = 1.28 mH, IAR = 8 A, R G = 25 Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 2 1 3 1 2004-02-26 2SK3759 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge Gate-source charge Gate-drain charge tf toff Qg Qgs Qgd V DD 400 V, V GS = 10 V, ID = 8 A - Duty < 1%, tw = 10 s = Symbol IGSS V (BR) GSS IDSS V (BR) DSS V th RDS (ON) Yf s Ciss Crss Coss tr ton 10 V V GS 0V 50 ID = 4 A V OUT RL = 50 V DD 200 V - V DS = 25 V, V GS = 0 V, f = 1 MHz Test Condition V GS = 25 V, V DS = 0 V ID = 10 A, V GS = 0 V V DS = 500 V, V GS = 0 V ID = 10 mA, V GS = 0 V V DS = 10 V, ID = 1 mA V GS = 10 V, ID = 4 A V DS = 10 V, ID = 4 A Min 30 500 2.0 3.0 Typ. 0.75 6.5 1050 10 110 26 45 38 130 28 16 12 Max 10 100 4.0 0.85 pF Unit A V A V V S ns nC Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP V DSF trr Qrr Test Condition IDR = 8 A, V GS = 0 V IDR = 8 A, V GS = 0 V, dIDR /dt = 100 A/s Min Typ. 1200 10 Max 8 32 -1.7 Unit A A V ns C Marking *| Lot Number TYPE Date Month (Starting from Alphabet A) Year (Last Number of the Christian Era) *| K3759 2 2004-02-26 2SK3759 ID - V DS 10 COMMON SOURCE Tc = 25C PULSE TEST 20 1015 6 5.25 1015 ID - V DS 6 COMMON SOURCE Tc = 25C PULSE TEST 5.5 12 5 8 DRAIN CURRENT D (A) I DRAIN CURRENT D (A) I 5 8 16 6 4.75 4 4.5 4.25 4.5 4 VGS = 4 V 2 VGS = 4 V 0 0 2 4 6 8 10 0 0 10 20 30 40 50 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) ID - V GS DRAIN-SOURCE VOLTAGE VDS (V) 20 COMMON SOURCE 10 V DS - V GS COMMON SOURCE Tc = 25*Z 8 PULSE TEST DRAIN CURRENT D (A) I 16 VDS = 20 V PULSE TEST 12 6 ID = 8 A 8 Tc = -55C 4 100 25 4 4 2 2 0 0 2 4 6 8 10 0 0 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VGS (V) Yf s - ID FORWARD TRANSFER ADMITTANCE Yf s (S) 100 10 RDS (ON) - ID DRAIN-SOURCE ON RESISTANCE RDS (ON) ( m) COMMON SOURCE Tc = 25C PULSE TEST Tc = -55C 10 25 100 1 VGS = 10 V15V 1 COMMON SOURCE VDS = 20 V PULSE TEST 1 10 100 0.1 0.1 0.1 0.01 0.1 1 10 DRAIN CURRENT D (A) I DRAIN CURRENT D (A) I 3 2004-02-26 2SK3759 RDS (ON) - Tc 5 100 IDR - V DS DRAIN REVERSE CURRENT DR I (A) COMMON SOURCE Tc = 25C PULSE TEST 10 DRAIN-SOURCE ON RESISTANCE RDS (ON) ( m ) COMMON SOURCE PULSE TEST 4 3 2 VGS = 10 V 1 2 ID = 8A 4 1 10 5 3 1 VGS = 0, -1 V -0.8 -1.0 -1.2 0 -80 -40 0 40 80 120 160 0.1 0 -0.2 -0.4 -0.6 CASE TEMPERATURE Tc ( C) DRAIN-SOURCE VOLTAGE VDS (V) CAPACITANCE - V DS 10000 5 V th - T c CAPACITANCE C (pF) Ciss 1000 GATE THRESHOLD VOLTAGE V th (V) 4 Coss 100 3 2 COMMON SOURCE 1 VDS = 10 V ID = 1 mA PULSE TEST 0 -80 10 COMMON SOURCE VGS = 0 V f = 1 MHz Tc = 25C 1 0.1 1 3 5 10 Crss 30 50 100 -40 0 40 80 120 160 DRAIN-SOURCE VOLTAGE VDS (V) CASE TEMPERATURE Tc (C) PD - Tc DRAIN-SOURCE VOLTAGE VDS (V) 80 500 DYNAMIC INPUT / OUTPUT CHARACTERISTICS GATE-SOURCE VOLTAGE VGS (V) 20 DRAIN POWER DISSIPATION PD (W) 400 60 VDS VDD = 100 V 16 300 200 200 VGS 400 12 40 8 COMMON SOURCE ID = 8 A 20 100 Tc = 25C PULSE TEST 4 0 0 0 0 10 20 30 40 40 80 120 160 0 50 CASE TEMPERATURE Tc ( C) TOTAL GATE CHARGE Q (nC) g 4 2004-02-26 2SK3759 r th - tw NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c) 10 1 Duty=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 10E SINGLE PULSE t T Duty = t/T Rth (ch-c) = 1.68C/W 1* 10* 100* 1 10 PDM 100E PULSE WIDTH tw (s) SAFE OPERATING AREA 100 ID max ( PULSED) * 60 EA S - Tch 50 DRAIN CURRENT D (A) I 10 ID max ( CONTINUOUS) * 1 ms * AVALANCHE ENERGY EA S (mJ) 100 s * 40 30 1 DC OPERATION Tc = 25C 20 10 *|SINGLE NONREPETITIVE PULSE 0.1 CURVES Tc=25*Z MUST BE DERATED 0 25 50 75 100 125 150 LINEARLY WITH INCREASE IN TEMPERATURE. CHANNEL TEMPERATURE (INITIAL) Tch (C) VDSS max 100 1000 0.01 1 10 15 V DRAIN-SOURCE VOLTAGE VDS (V) -15 V BVDSS IAR V DD V DS TEST CIRCUIT RG = 25 V DD = 90 V, L = 1.28 mH WAVE FORM A AS = 1 BVDSS L I2 B 2 - VDD VDSS 5 2004-02-26 2SK3759 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 030619EAA * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire sys tem , and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 6 2004-02-26 |
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