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| BSS84 Small Signal MOSFET P-Channel 3 DRAIN SOT-23 Features: *Low On-Resistance : 10 *Low Input Capacitance: 30PF *Low Out put Capacitance : 10PF *Low Threshole : 2.0V *Fast Switching Speed : 2.5ns 1 GATE 2 SOURCE 3 1 2 Application: * DC to DC Converter * Cellular & PCMCIA Card * Cordless Telephone * Power Management in Portable and Battery etc. Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TA=25 C) Pulsed Drain Current(tp 10us) Power Dissipation (TA=25 C) Maximax Junction-to-Ambient Operating Junction and Storage Temperature Range Symbol VDSS VGS ID IDM PD R JA TJ, Tstg Value 50 Unite V V mA mA mW C/W C + -20 130 520 225 556 -55 to 150 Device Marking BSS84=PD WEITRON http://www.weitron.com.tw BSS84 Electrical Characteristics Characteristic (TA=25 C Unless otherwise noted) Symbol Min Typ Max Unit Static (1) Drain-Source Breakdown Voltage VGS=0V, ID=250 uA Gate-Source Threshold Voltage VDS=VGS, ID=1.0 mA Gate-Source Leakage Current + VDS=0V, VGS=-20V Zero Gate Voltage Drain Current VDS=25V, VGS=0V VDS=50V, VGS=0V Drain-Source On-Resistance VGS=5.0V, ID=100mA Forward Transconductance VDS=25V, ID=100mA, f=1.0KHZ V(BR)DSS VGS (th) IGSS IDSS 50 0.8 2.0 + -60 0.1 15 10 V V uA uA 50 rDS (on) gfs 5.0 - - mS Dynamic Input Capacitance VDS=5V, VGS=0V, f=1MHZ Output Capacitance VDS=5V, VGS=0V, f=1MHZ Reverse Transfer Capacitance VDS=5V, VGS=0V, f=1MHZ Ciss Coss Crss - 30 10 5.0 PF Switching (2) Turn-On Time VDD =-15V, I D=-2.5A, R L =50 Rise Time VDD =-15V, I D=-2.5A, R L =50 Turn-Off Time VDD =-15V, I D=-2.5A, R L =50 Fall Time VDD =-15V, I D=-2.5A, R L =50 Gate Charge td(on) tr td(off ) tf QT - 25 1.0 16 8.0 6000 - nS nS PC Source-Drain Diode Characteristics Continuous Current Pulsed Current Forward Voltage (2) IS I SM VSD - 2.5 0.130 A 0.520 - V Note: 1. Pulse Test : PW 300us, Duty Cycle 2%. 2. Switching Time is Essentially Independent of Operating Temperature. WEITRON http://www.weitron.com.tw BSS84 TYPICAL ELECTRICAL CHARACTERISTICS 0.6 VDS = 10 V I D , DRAIN CURRENT (AM PS) 0.5 - 55 C 0.4 0.3 0.2 0.1 0 150 C 25 C 0.5 0.45 I D , DRAIN CURRENT (AM PS) 0.4 TJ = 25 C VGS = 3.5 V 3.25 V 0.35 0.3 0.2 3.0 V 0.25 2.75 V 2.5 V 2.25 V 0 1 2 3 4 5 6 7 8 9 10 0.15 0.1 0.05 1 1.5 2 2.5 3 3.5 4 0 VGS , GATE- TO- SOURCE VOLTAGE (VOLTS) VDS , DRAIN- TO- SOURCE VOLTAGE (VOLTS) FIG1. Transfer Characteristics FIG2. On-Region Characteristics R DS(on) , DRAIN- TO- SOURCE RESISTANCE (OHMS) 9 8 7 6 5 4 3 2 0 R DS(on) , DRAIN- TO- SOURCE RESISTANCE (OHMS) VGS = 4.5 V 150 C 7 6.5 6 5.5 5 4.5 4 3.5 3 2.5 2 0 0.1 0.2 0.3 VGS = 10 V 150 C 25 C 25 C - 55 C - 55 C 0.4 0.5 0.6 0.1 0.2 0.3 0.4 0.5 0.6 ID, DRAIN CURRENT (AM PS) ID, DRAIN CURRENT (AM PS) FIG3. On-Resistance versus Drain Current FIG4. On-Resistance versus Drain Current WEITRON http://www.weitron.com.tw BSS84 R DS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) VGS , GATE-T O-SOURCE VOLTAGE (VOLTS) 2 1.8 1.6 1.4 1.2 1 0.8 0.6 - 55 -5 45 95 145 VGS = 4.5 V ID = 0.13 A VGS = 10 V ID = 0.52 A 8 7 6 5 4 3 2 1 0 0 VDS = 40 V TJ = 25 C ID = 0.5 A 500 1000 1500 2000 TJ , JUNCTION TEMPERATURE ( C) QT, TOTAL GATE CHARGE (pC) FIG5. On-Resistance Variation with Temperature FIG6. Gate Charge 1 I D , DIODE CURRENT (AMPS) 0.1 TJ = 150 C 25 C -55 C 0.01 0.001 0 0.5 1.0 1.5 2.0 2.5 3.0 VSD, DIODE FORWARD VOL TAGE (VOLTS) FIG7. Body Diode Forward Voltage WEITRON http://www.weitron.com.tw |
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