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| SEMICONDUCTOR TECHNICAL DATA VOLTAGE REGULATOR, RELAY, RAMP DRIVER, INDUSTRIAL USE B KTA708 EPITAXIAL PLANAR PNP TRANSISTOR C FEATURES High Current : IC(Max.)=-1A. High Transition Frequency : fT=150MHz(Typ.). Wide Area of Safe Operation. Complementary to KTC1008. K D J E G N A High Voltage : VCEO=-60V(Min.). H MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC ) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg RATING -80 -60 -5 -1 -2 625 150 -55 150 UNIT V V V A mW L F F 1 2 3 M C DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00 1. EMITTER 2. COLLECTOR 3. BASE Pulse TO-92 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Note : hFE(1) Classification O:60 120, Y:100 ) TEST CONDITION VCB=-50V, IE=0 VEB=-4V, IC=0 VCE=-2V, IC=-50mA VCE=-2V, IC=-1A IC=-1mA, IB=0 IC=-500mA, IB=-50mA IC=-500mA, IB=-50mA VCE=-10V, IC=-50mA VCB=-10V, IE=0, f=1MHz MIN. 60 30 -60 TYP. -0.2 -0.85 150 12 MAX. -100 -100 200 -0.7 -1.2 V V V MHz pF UNIT nA nA ICBO IEBO SYMBOL hFE(1) hFE(2) V(BR)CEO VCE(sat) VBE(sat) fT Cob 200 1999. 11. 30 Revision No : 2 1/3 KTA708 I C - V CE -1000 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) IB=-10mA I C - VCE -1000 -5 0 mA -800 -600 -400 -200 0 IB=-8mA IB=-6mA IB=-4mA IB=-3mA IB=-2mA IB=-1mA IB=0mA -800 -600 -400 I B= 30 mA IB=-20mA IB=-10mA IB=-6mA IB=-4mA IB=-2mA -200 0 IB=0mA 0 -2 -4 -6 -8 -10 -12 0 IB = -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER VOLTAGE VCE (V) hFE - I C COLLECTOR OUTPUT CAPACITANCE C ob (pF) 1K DC CURRENT GAIN h FE 500 300 VCE =-2V COMMON EMITTER Ta=25 C C ob - V CB 100 50 30 COMMON EMITTER f=1MHz Ta=25 C 100 50 30 10 5 3 -1 -3 -5 -10 -30 -50 -100 COLLECTOR-BASE VOLTAGE VCB (V) 10 -1 -3 -10 -30 -100 -300 -1K -5K COLLECTOR CURRENT I C (mA) fT - IC COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) TRANSITION FREQUENCY f T (MHz) 300 COMMON EMITTER Ta=25 C VCE =-10V VCE(sat) - I C -1.0 -0.5 -0.3 COMMON EMITTER Ta=25 C 100 50 30 -0.1 -0.05 -0.03 IC /I B 0 =1 10 -1 -3 -10 -30 -100 -300 COLLECTOR CURRENT I C (mA) -0.01 -1 -3 -10 -30 -100 -300 -1K -5K COLLECTOR CURRENT I C (mA) 1999. 11. 30 Revision No : 0 2/3 KTA708 I C - V CE -1000 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) IB=-10mA I C - VCE -1000 -5 0 mA -800 -600 -400 -200 0 IB=-8mA IB=-6mA IB=-4mA IB=-3mA IB=-2mA IB=-1mA IB=0mA -800 -600 -400 I B= 30 mA IB=-20mA IB=-10mA IB=-6mA IB=-4mA IB=-2mA -200 0 IB=0mA 0 -2 -4 -6 -8 -10 -12 0 IB = -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER VOLTAGE VCE (V) hFE - I C COLLECTOR OUTPUT CAPACITANCE C ob (pF) 1K DC CURRENT GAIN h FE 500 300 VCE =-2V COMMON EMITTER Ta=25 C C ob - V CB 100 50 30 COMMON EMITTER f=1MHz Ta=25 C 100 50 30 10 5 3 -1 -3 -5 -10 -30 -50 -100 COLLECTOR-BASE VOLTAGE VCB (V) 10 -1 -3 -10 -30 -100 -300 -1K -5K COLLECTOR CURRENT I C (mA) fT - IC COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) TRANSITION FREQUENCY f T (MHz) 300 COMMON EMITTER Ta=25 C VCE =-10V VCE(sat) - I C -1.0 -0.5 -0.3 COMMON EMITTER Ta=25 C 100 50 30 -0.1 -0.05 -0.03 IC /I B 0 =1 10 -1 -3 -10 -30 -100 -300 COLLECTOR CURRENT I C (mA) -0.01 -1 -3 -10 -30 -100 -300 -1K -5K COLLECTOR CURRENT I C (mA) 1999. 11. 30 Revision No : 0 2/3 KTA708 SAFE OPERATING AREA COLLECTOR POWER DISSIPATION P C (mW) COLLECTOR CURRENT I C (A) -5 -3 I CP -1 -0.5 -0.3 -0.1 -0.05 -0.03 -0.01 -0.005 -0.5 I C MAX. DC 1s Pc - Ta 1PULSE 1.2k 1k 800 600 400 200 0 0 20 40 60 80 100 120 140 160 OP ec c se 1m 10 ms ec 0m 10 ER AT c se IO N -1 -3 -5 -10 -30 -50 -100 COLLECTOR-EMITTER VOLTAGE VCE (V) AMBIENT TEMPERATURE Ta ( C) 1999. 11. 30 Revision No : 0 3/3 |
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