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| NTTS2P03R2 Power MOSFET -2.48 Amps, -30 Volts P-Channel Enhancement Mode Single Micro8t Package Features http://onsemi.com * * * * * * Ultra Low RDS(on) Higher Efficiency Extending Battery Life Miniature Micro8 Surface Mount Package Diode Exhibits High Speed, Soft Recovery Micro8 Mounting Information Provided Pb-Free Package is Available -2.48 AMPERES -30 VOLTS 85 mW @ VGS = -10 V Single P-Channel D Applications * Power Management in Portable and Battery-Powered Products, i.e.: Cellular and Cordless Telephones and PCMCIA Cards MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Thermal Resistance, Junction-to-Ambient (Note 1) Total Power Dissipation @ TA = 25C Continuous Drain Current @ TA = 25C Continuous Drain Current @ TA = 70C Thermal Resistance, Junction-to-Ambient (Note 2) Total Power Dissipation @ TA = 25C Continuous Drain Current @ TA = 25C Continuous Drain Current @ TA = 70C Thermal Resistance, Junction-to-Ambient (Note 3) Total Power Dissipation @ TA = 25C Continuous Drain Current @ TA = 25C Continuous Drain Current @ TA = 70C Pulsed Drain Current (Note 5) Thermal Resistance , Junction-to-Ambient (Note 4) Total Power Dissipation @ TA = 25C Continuous Drain Current @ TA = 25C Continuous Drain Current @ TA = 70C Pulsed Drain Current (Note 5) Operating and Storage Temperature Range Symbol VDSS VGS RqJA PD ID ID RqJA PD ID ID RqJA PD ID ID IDM RqJA PD ID ID IDM TJ, Tstg Value -30 "20 160 0.78 -2.48 -1.98 70 1.78 -3.75 -3.0 210 0.60 -2.10 -1.67 -17 100 1.25 -3.02 -2.42 -24 -55 to +150 Unit V V C/W W A A C/W W A A Source C/W W A A A C/W W A A A C Source Source Gate G S 8 1 Micro8 CASE 846A STYLE 1 MARKING DIAGRAM & PIN ASSIGNMENT 1 2 3 4 8 7 6 5 Drain Drain Drain Drain (Top View) WW = Work Week AE = Device Code G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device NTTS2P03R2 NTTS2P03R2G Package Micro8 Micro8 (Pb-Free) Shipping 4000/Tape & Reel 4000/Tape & Reel WW AEG G Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Minimum FR-4 or G-10 PCB, Time 10 Seconds. 2. Mounted onto a 2 square FR-4 Board (1 sq. 2 oz Cu 0.06 thick single sided), Time 10 Seconds. 3. Minimum FR-4 or G-10 PCB, Steady State. 4. Mounted onto a 2 square FR-4 Board (1 sq. 2 oz Cu 0.06 thick single sided), Steady State. 5. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%. (c) Semiconductor Components Industries, LLC, 2005 For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 June, 2005 - Rev. 2 Publication Order Number: NTTS2P03R2/D NTTS2P03R2 MAXIMUM RATINGS (TJ = 25C unless otherwise noted) (continued) Rating Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25C (VDD = -30 Vdc, VGS = -10 Vdc, Peak IL = -3.0 Apk, L = 65 mH, RG = 25 W) Maximum Lead Temperature for Soldering Purposes for 10 seconds Symbol EAS TL Value 292.5 260 Unit mJ C ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) (Note 6) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (VGS = 0 Vdc, ID = -250 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VGS = 0 Vdc, VDS = -30 Vdc, TJ = 25C) (VGS = 0 Vdc, VDS = -30 Vdc, TJ = 125C) Gate-Body Leakage Current (VGS = -20 Vdc, VDS = 0 Vdc) Gate-Body Leakage Current (VGS = +20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = -250 mAdc) Temperature Coefficient (Negative) Static Drain-to-Source On-State Resistance (VGS = -10 Vdc, ID = -2.48 Adc) (VGS = -4.5 Vdc, ID = -1.24 Adc) Forward Transconductance (VDS = -15 Vdc, ID = -1.24 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Notes 7 & 8) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge BODY-DRAIN DIODE RATINGS (Note 7) Diode Forward On-Voltage (IS = -2.48 Adc, VGS = 0 Vdc) (IS = -2.48 Adc, VGS = 0 Vdc, TJ = 125C) (IS = -1.45 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) Reverse Recovery Stored Charge 6. Handling precautions to protect against electrostatic discharge is mandatory. 7. Indicates Pulse Test: Pulse Width = 300 msec max, Duty Cycle = 2%. 8. Switching characteristics are independent of operating junction temperature. VSD - - - - - - -0.92 -0.72 38 20 18 0.04 -1.3 - - - - - mC Vdc (VDS = -24 Vdc, VGS = -4.5 Vdc, ID = -2.48 Adc) (VDD = -24 Vdc, ID = -1.24 Adc, VGS = -4.5 Vdc, RG = 6.0 W) (VDD = -24 Vdc, ID = -2.48 Adc, VGS = -10 Vdc, RG = 6.0 W) td(on) tr td(off) tf td(on) tr td(off) tf Qtot Qgs Qgd - - - - - - - - - - - 10 20 40 35 16 40 30 30 15 3.2 4.0 - - - - - - - - 22 - - nC ns ns (VDS = -24 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss Coss Crss - - - 500 160 65 - - - pF VGS(th) RDS(on) - - gFS - 0.063 0.100 3.1 0.085 0.135 - Mhos -1.0 - -1.7 3.6 -3.0 - Vdc W V(BR)DSS IDSS - - IGSS IGSS - - - - - - -1.0 -25 -100 100 nAdc nAdc -30 - - -30 - - Vdc mV/C mAdc Symbol Min Typ Max Unit Reverse Recovery Time trr ta tb QRR ns http://onsemi.com 2 NTTS2P03R2 3 -ID, DRAIN CURRENT (AMPS) -10 V 5 -3.5 V -ID, DRAIN CURRENT (AMPS) -3.3 V -3.7 V -3.9 V 2 -4.1 V -4.5 V -4.9 V -6 V TJ = 25C -3.1 V VDS -10 V 4 3 TJ = 25C 2 -2.9 V 1 -2.7 V -2.5 V VGS = -2.3 V 1 0 TJ = 100C TJ = -55C 1 2 3 4 5 0 0 0.25 0.5 0.75 1 1.25 1.5 1.75 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 0.3 0.25 0.2 0.15 0.1 0.05 0 0 2 4 6 8 10 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID = -2.48 A TJ = 25C RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.15 TJ = 25C 0.1 VGS = -4.5 V VGS = -10 V 0.05 0 0.5 1.5 2.5 3.5 4.5 5.5 -ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance versus Gate-to-Source Voltage Figure 4. On-Resistance versus Drain Current and Gate Voltage RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.6 ID = -2.48 A VGS = -10 V 10,000 VGS = 0 V -IDSS, LEAKAGE (nA) 1.4 1000 TJ = 150C 1.2 100 TJ = 100C 10 1 0.8 0.6 -50 1 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) 150 5 10 15 20 25 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 30 Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current versus Voltage http://onsemi.com 3 NTTS2P03R2 6 5 QT 4 Q1 3 2 1 VDS 0 0 2 4 6 8 10 12 14 16 Qg, TOTAL GATE CHARGE (nC) ID = -2.48 A TJ = 25C Q2 VGS 20 15 10 5 0 30 25 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 1 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 1200 C, CAPACITANCE (pF) 1000 800 VDS = 0 V Ciss VGS = 0 V TJ = 25C Crss 600 400 200 0 -10 Coss Crss -5 0 -VGS -VDS GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) 5 10 15 20 25 30 Ciss Figure 8. Gate-to-Source and Drain-to-Source Voltage versus Total Charge Figure 7. Capacitance Variation 100 -IS, SOURCE CURRENT (AMPS) 3 2.5 2 1.5 1 0.5 0 0.4 0.5 0.6 0.7 0.8 0.9 -VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) VGS = 0 V TJ = 25C td (off) t, TIME (ns) tf 10 tr td (on) VDD = -24 V ID = -2.48 A VGS = -10 V 1 1 10 RG, GATE RESISTANCE (OHMS) 100 Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current 100 ID , DRAIN CURRENT (AMPS) VGS = 30 V SINGLE PULSE TC = 25C 1 ms 10 ms 1 tp 0.1 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 1 10 dc IS 0.25 IS di/dt IS trr ta tb TIME 10 0.01 100 Figure 12. Diode Reverse Recovery Waveform VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 11. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 4 NTTS2P03R2 TYPICAL ELECTRICAL CHARACTERISTICS 1000 Rthja(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (C/W) 100 D = 0.5 0.2 0.1 0.05 0.02 0.01 10 P(pk) 1 SINGLE PULSE 0.1 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 t, TIME (s) t2 DUTY CYCLE, D = t1/t2 1.0E+00 t1 RqJC(t) = r(t) RqJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) 1.0E+01 1.0E+02 1.0E+03 Figure 13. Thermal Response http://onsemi.com 5 NTTS2P03R2 PACKAGE DIMENSIONS Micro8 CASE 846A-02 ISSUE F -A- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. 846A-01 OBSOLETE, NEW STANDARD 846A-02. DIM A B C D G H J K L MILLIMETERS MIN MAX 2.90 3.10 2.90 3.10 --- 1.10 0.25 0.40 0.65 BSC 0.05 0.15 0.13 0.23 4.75 5.05 0.40 0.70 INCHES MIN MAX 0.114 0.122 0.114 0.122 --- 0.043 0.010 0.016 0.026 BSC 0.002 0.006 0.005 0.009 0.187 0.199 0.016 0.028 K -B- PIN 1 ID G D 8 PL 0.08 (0.003) M TB S A S -T- PLANE 0.038 (0.0015) H SEATING C J L STYLE 1: PIN 1. 2. 3. 4. 5. 6. 7. 8. SOURCE SOURCE SOURCE GATE DRAIN DRAIN DRAIN DRAIN SOLDERING FOOTPRINT* 8X 1.04 0.041 0.38 0.015 8X 3.20 0.126 4.24 0.167 5.28 0.208 6X 0.65 0.0256 SCALE 8:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Micro8 is a trademark of International Rectifier. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 NTTS2P03R2/D |
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