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| Point Source Infrared Emitting Diode OP230WPS * * * * * * Point Source Symmetrical beam pattern Flat lens for wide beam angle Ideal for use with collimating lenses Wide operating temperature range TO-46 metal can package Product Photo Here The OP230WPS is an 850nm GaAlAs, point source, infrared emitting diode mounted in a hermetic flat lens, TO-46 metal can package. The advantage of this emitter is that it emits photons from a 0.004" area that is aligned with the package optical centerline. Unlike other GaAlAs emitters, this device performs more like an ideal point source and is suitable for use with lenses to create collimated light sources that can be used in and a variety of sensing applications. Applications include: * Optical Encoders * Light Curtains * Optical Triangulation Systems * Bar Code Readers 1--ANODE 2--CATHODE Pb RoHS Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc.-- 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (800) 341-4747 FAX: (972) 323- 2396 sensors@optekinc.com www.optekinc.com A subsidiary of TT electronics plc Point Source Infrared Emitting Diode OP230WPS Absolute Maximum Ratings TA = 25o C unless otherwise noted Storage Temperature Operating Temperature Lead Soldering Temperature (1/16" (1.6mm) from case for 5 seconds with soldering iron) Forward Current Peak Forward current (2 s pulse width, 0.1% Duty Cycle) Reverse DC Voltage Power Dissipation -55 C to +150 C -40 C to +125 C 260 C (2) 100 mA 3.0 A 2.0 V 100 mW (3) Electrical Characteristics (TA = 25C unless otherwise noted) SYMBOL Ee(APT) VF IR P HP PARAMETER Apertured Irradiance Forward Voltage Reverse Current Peak Wavelength Spectral Bandwidth @50% IF=20mA Emission Angle at Half Power 850 25 45 20 20 MIN 0.50 2.2 10 TYP MAX UNITS CONDITIONS mW/cm2 IF = 100 mA (4) V A nm nm IF = 100 mA VR = 2.5 V IF = 20 mA IF = 20 mA Degrees IF = 20 mA ns ns IF(Peak) = 100 mA, Pulse Width=10s, Duty Cycle=10% tr tf Notes: (1) (2) (3) (4) Optical Rise Time Optical Fall Time All parameters tested using pulse technique. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. Derate at 1mW/C above 25C. Ee(APT) is a measurement of the average apertured radiant energy incident upon a sensing area 0.250" (6.35mm) in diameter and perpendicular to and centered to the mechanical axis of the emitting surface at a distance of 0.466" (11.84mm). Ee(APT) is not necessarily uniform within the measured area. OPTEK Technology Inc.-- 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (800) 341-4747 FAX: (972) 323- 2396 sensors@optekinc.com www.optekinc.com Issue 1.1 09.05 Page 2 of 3 Point Source Infrared Emitting Diode OP230WPS Relative Radiant Intensity vs. Forward Current 100% IF = 0 to 100mA Pulse Width = 100S Duty Cycle = 0.1% Forward Voltage vs. Forward Current 2.0 IF = 0 to 100mA Pulse Width = 100S Duty Cycle = 0.1% 80% 1.6 Relative Radiant Intensity Forward Voltage (V) 60% 1.2 40% 0.8 20% 0.4 0% 0 20 40 60 80 100 0.0 0 20 40 60 80 100 Forward Current (mA) Forward Current (mA) Relative Radiant Intensity vs. Angular Displacement 100% 120% 110% Relative Radiant Intensity vs. Ambient Temperature IF = 100mA Pulse Width = 100S Duty Cycle = 0.1% Normalized at 25C 80% Relative Radiant Intensity Relative Radiant Intensity -60 -30 0 30 60 90 100% 60% 90% 40% 80% 20% 70% 60% -50 -25 0 25 50 75 100 125 0% -90 Angular Displacement (Degrees) Temperature (C) OPTEK Technology Inc.-- 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (800) 341-4747 FAX: (972) 323- 2396 sensors@optekinc.com www.optekinc.com Issue 1.1 09.05 Page 2 of 3 |
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