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| Composite Transistors XN6534 Silicon NPN epitaxial planer transistor Unit: mm For high-frequency amplification 0.650.15 6 2.8 -0.3 +0.2 +0.25 1.5 -0.05 0.650.15 1 0.3 -0.05 0.95 2.9 -0.05 q q Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 1.90.1 +0.2 5 2 0.95 4 3 q 2SC2404 x 2 elements 1.1-0.1 0.40.2 s Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of Emitter to base voltage element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg (Ta=25C) Ratings 30 20 3 15 200 150 -55 to +150 Unit V V V mA mW C C 1 : Collector (Tr1) 2 : Base (Tr1) 3 : Collector (Tr2) 4 : Base (Tr2) 5 : Emitter (Tr2) 6 : Emitter (Tr1) EIAJ : SC-74 Mini Type Package (6-pin) Marking Symbol: 7F Internal Connection 6 5 4 Tr1 1 2 3 Tr2 s Electrical Characteristics Parameter Collector to base voltage Emitter to base voltage Forward current transfer ratio Forward current transfer hFE ratio Base to emitter voltage Common emitter reverse transfer capacitance Transition frequency Noise figure Power gain *1 (Ta=25C) Symbol VCBO VEBO hFE hFE (small/large)*1 VBE Cre fT NF PG Conditions IC = 10A, IE = 0 IE = 10A, IC = 0 VCB = 6V, IE = -1mA VCB = 6V, IE = -1mA VCB = 6V, IE = -1mA VCB = 6V, IE = -1mA, f = 10.7MHz VCB = 6V, IE = -1mA, f = 200MHz VCB = 6V, IE = -1mA, f = 100MHz VCB = 6V, IE = -1mA, f = 100MHz 450 min 30 3 40 0.5 0.99 720 0.8 650 3.3 24 1 mV pF MHz dB dB 260 typ max Unit V V Ratio between 2 elements 0 to 0.05 0.1 to 0.3 0.8 0.16-0.06 +0.2 s Basic Part Number of Element +0.1 1.450.1 s Features 0.5 -0.05 +0.1 +0.1 1 Composite Transistors PT -- Ta 500 XN6534 IC -- VCE 12 Ta=25C IB=100A 10 12 VCE=6V Ta=25C IC -- I B Total power dissipation PT (mW) Collector current IC (mA) 8 80A Collector current IC (mA) 400 10 8 300 60A 6 40A 4 20A 2 6 200 4 100 2 0 0 40 80 120 160 0 0 4 8 12 16 0 0 40 80 120 160 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base current IB (A) IC -- VBE 30 100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) VCE=6V IC/IB=10 360 hFE -- IC VCE=6V 25 25C Ta=75C -25C 30 10 3 1 0.3 25C 0.1 0.03 0.01 0.1 Ta=75C -25C Forward current transfer ratio hFE 300 Collector current IC (mA) 20 240 Ta=75C 25C 120 -25C 15 180 10 5 60 0 0 0.4 0.8 1.2 1.6 2.0 0.3 1 3 10 30 100 0 0.1 0.3 1 3 10 30 100 Base to emitter voltage VBE (V) Collector current IC (mA) Collector current IC (mA) fT -- IE 1200 120 Zrb -- IE Common emitter reverse transfer capacitance Cre (pF) 2.4 Cre -- VCE VCB=6V f=2MHz Ta=25C IC=1mA f=10.7MHz Ta=25C Reverse transfer impedance Zrb () VCB=6V Ta=25C Transition frequency fT (MHz) 1000 100 2.0 800 80 1.6 600 60 1.2 400 40 0.8 200 20 0.4 0 -0.1 -0.3 -1 -3 -10 -30 -100 0 -0.1 -0.3 -1 -3 -10 0 0.1 0.3 1 3 10 30 100 Emitter current IE (mA) Emitter current IE (mA) Collector to emitter voltage VCE (V) 2 |
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