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Power Transistors 2SC3974 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm q q q q q 16.20.5 12.5 3.5 Solder Dip High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25C) Ratings 800 800 500 500 15 7 4 80 3 150 -55 to +150 Unit V V V V A A A W C C 0.7 s Features 15.00.3 11.00.2 5.00.2 3.2 21.00.5 15.00.2 3.20.1 2.00.2 2.00.1 1.10.1 5.450.3 10.90.5 1 2 3 0.60.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg 1:Base 2:Collector 3:Emitter TOP-3 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time (TC=25C) Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 800V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 4A IC = 4A, IB = 0.8A IC = 4A, IB = 0.8A VCE = 10V, IC = 0.5A, f = 1MHz IC = 4A, IB1 = 0.8A, IB2 = -1.6A, VCC = 200V 20 1.0 3.0 0.3 500 15 8 1.0 1.5 V V MHz s s s min typ max 100 100 Unit A A V 1 Power Transistors PC -- Ta 120 12 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) Without heat sink (PC=3W) (1) 60 TC=25C 10 2SC3974 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=5 30 10 3 1 0.3 0.1 0.03 0.01 0.1 TC=100C 25C -25C VCE(sat) -- IC Collector power dissipation PC (W) 100 Collector current IC (A) 80 8 IB=90mA 50mA 40mA 6 40 4 30mA 20mA 20 (2) (3) 2 10mA 5mA 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0.3 1 3 10 30 100 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC 100 hFE -- IC IC/IB=5 1000 VCE=5V 1000 fT -- IC VCE=10V f=1MHz TC=25C Base to emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE 30 300 Transition frequency fT (MHz) 3 10 30 100 300 10 100 TC=100C 30 25C -25C 100 3 TC=-25C 100C 25C 0.3 30 1 10 10 3 3 0.1 0.1 0.3 1 3 10 30 100 1 0.1 0.3 1 1 0.01 0.03 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob -- VCB 10000 100 IE=0 f=1MHz TC=25C 30 ton, tstg, tf -- IC Pulsed tw=1ms Duty cycle=1% IC/IB=5 (2IB1=-IB2) VCC=200V TC=25C Area of safe operation (ASO) 100 30 ICP Non repetitive pulse TC=25C Collector output capacitance Cob (pF) Switching time ton,tstg,tf (s) 3000 Collector current IC (A) 10 3 10 3 IC t=0.5ms 1ms 10ms DC 1000 tstg 1 0.3 0.1 0.03 ton tf 300 1 0.3 0.1 0.03 0.01 100 30 10 1 3 10 30 100 0.01 0 1 2 3 4 5 6 7 8 1 3 10 30 100 300 1000 Collector to base voltage VCB (V) Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Area of safe operation, reverse bias ASO 8 7 ICP Lcoil=30H IC/IB=5 (IB1=-IB2) TC100C 2SC3974 Reverse bias ASO measuring circuit L coil IB1 Vin T.U.T IC Collector current IC (A) 6 5 4 3 2 1 0 0 100 200 300 400 500 600 700 800 -IB2 VCC tW Vclamp Collector to emitter voltage VCE (V) Rth(t) -- t 10000 Note: Rth was measured at Ta=25C and under natural convection. (1) PT=10V x 0.3A (3W) and without heat sink (2) PT=10V x 1.0A (10W) and with a 100 x 100 x 2mm Al heat sink Thermal resistance Rth(t) (C/W) 1000 100 (1) 10 (2) 1 0.1 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3 |
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